FMM5811GJ-1

FMM5811GJ-1 17.7-23.6GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 24.5dBm (Typ.) High Gain: G1dB = 15dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 17.7-23.6GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5811GJ-1 is a high-gain, wide band 3-stage MMIC amplifier designed for operation in the 17.7-23.6GHz frequency range. This amplifier has an input and output matching designed for use in a 50Ω systems.This device is well suited for point-to-point radio applications. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Input Power Storage Temperature Operating Backside Temperature Symbol VDD VGG Pin Tstg Top Condition Rating 10 -7 16 -55 to +125 -40 to +85 Unit V V dBm °C °C Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDD) should not exceed 6 volts. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Frequency Range Output Power at 1 dB G.C.P. Power Gain at 1 dB G.C.P. Gain Flatness Power-Added Efficiency Drain Current Gate Current Input Return Loss Output Return Loss Symbol f P1dB G1dB ∆G ηadd Iddrf Iggrf RLin RLout VDD = 6V VGG = -5V f = 17.7 - 23.6 GHz ZS = ZL = 50Ω Conditions Min. Limits Typ. Max. Unit GHz 20 400 -15.0 dBm dB dB % mA mA dB dB 17.7 - 23.6 23.0 12 24.5 15 2.0 20 250 -7.5 -7.0 -5.0 G.C.P.: Gain Compression Point Edition 1.1 July 2001 1 FMM5811GJ-1 17.7-23.6GHz Power Amplifier MMIC P1dB & G1dB vs. VDD 17.7GHz P1dB 17.7GHz G1dB 21.2GHz G1dB 23.6GHz G1dB TOTAL OUTPUT POWER vs. FREQUENCY VDD = 6V VGG = -5V 21.2GHz P1dB 23.6GHz P1dB VDD = 6V VGG = -5V 28 26 Pin 0dBm 2dBm 4dBm 6dBm P1dB 28 26 P1dB (dBm) P1dB 22 24 Pout (dBm) 24 22 20 G1dB 20 G1dB (dB) 18 16 22 20 18 16 14 18 14 17 4 5 VDD (V) 6 18 19 20 21 22 23 24 Frequency (GHz) RECOMMENDED BIAS CIRCUIT VDD = 6V IMD vs. OUTPUT POWER 17.7GHz IM3 21.2GHz IM3 23.6GHz IM3 17.7GHz IM5 21.2GHz IM5 23.6GHz IM5 1000pF 50Ω VGG VDD 50Ω 1000pF 3 2 RFin 1 1000pF 50Ω 4 5 RFout 6 50Ω IMD (dBc) -10 VGG = -5V ∆f = 10MHz VGG VDD -20 1000pF -30 -40 Note 1: The R/C networks are recommended on the bias supply lines, close to the package, to prevent video oscillations which could damage the module. Note 2: Bias point VDD can be connected at the input side or at the output: The two pins named VDD are internally connected. The same is true for VGG. -50 -60 8 10 12 14 16 18 20 22 Total Output Power (dBm) 2 FMM5811GJ-1 17.7-23.6GHz Power Amplifier MMIC S11 +j100 +j25 +j25 S22 +j100 +j50 +j50 +j10 19.2 18.4 17.6 22.4 20.0 +j250 +j10 20.8 +j250 17.6 21.6 250 22.4 0 10 20.8 23.2 21.6 24.0GHz 250 0 10 24.0GHz 20.0 18.4 23.2 19.2 -j10 -j250 -j10 -j250 -j25 -j50 -j100 -j25 -j50 -j100 S-PARAMETERS VDD = 6V, VGG = -5V FREQUENCY S11 (MHZ) MAG ANG 17200 17300 17400 17500 17600 17700 17800 17900 18000 18100 18200 18300 18400 18500 18600 18700 18800 18900 19000 19100 19200 19300 19400 19500 19600 19700 19800 19900 20000 20100 20200 20500 21000 21500 22000 22500 23000 23500 24000 .088 .068 .050 .036 .043 .070 .103 .136 .167 .199 .225 .253 .273 .291 .305 .317 .324 .329 .332 .329 .325 .317 .309 .296 .282 .265 .249 .227 .208 .187 .167 .129 .174 .228 .225 .197 .214 .256 .248 61.4 63.2 76.7 105.3 149.0 167.9 174.2 173.9 172.8 170.0 168.0 165.3 162.1 159.8 156.8 154.4 151.9 149.2 146.9 144.0 141.4 138.5 135.4 131.7 128.2 125.3 119.0 113.6 107.2 99.0 90.1 49.5 -16.6 -42.2 -50.6 -41.6 -25.9 -27.2 -49.3 S21 MAG 5.077 5.315 5.571 5.823 6.101 6.342 6.549 6.724 6.869 6.968 7.01 7.025 7.02 6.987 6.948 6.881 6.819 6.757 6.686 6.652 6.63 6.593 6.585 6.586 6.594 6.57 6.597 6.644 6.665 6.661 6.701 6.716 6.565 6.212 6.081 6.088 5.956 5.559 5.103 S12 ANG 15.8 2.7 -10.9 -25.0 -39.6 -54.5 -69.9 -85.4 -101.2 -116.9 -132.6 -148.1 -163.4 -178.6 166.4 151.8 137.0 122.5 108.2 94.0 79.8 65.6 51.6 37.4 23.1 9.0 -5.1 -19.4 -34.2 -48.6 -63.1 -107.7 177.0 103.3 29.9 -46.3 -126.0 152.1 66.9 S22 ANG 156.7 145.1 136.2 125.8 117.2 106.5 97.4 88.1 80.9 70.1 62.9 54.9 48.4 40.3 35.5 26.3 20.6 12.1 5.6 -0.1 -9.6 -17.9 -24.2 -31.5 -38.0 -45.7 -55.2 -62.5 -71.7 -81.1 -87.5 -113.2 -161.4 139.3 35.8 -94.5 -174.6 119.1 32.9 MAG .007 .007 .007 .006 .006 .006 .006 .006 .005 .005 .005 .005 .005 .005 .005 .004 .004 .004 .004 .004 .004 .004 .004 .004 .004 .004 .004 .004 .004 .004 .004 .004 .003 .002 .001 .001 .001 .002 .003 MAG .412 .385 .355 .322 .287 .249 .210 .169 .130 .096 .074 .076 .101 .132 .165 .196 .223 .248 .269 .287 .301 .310 .317 .319 .318 .314 .307 .296 .284 .269 .251 .190 .131 .176 .223 .225 .210 .242 .279 ANG 107.9 104.3 100.3 96.0 91.2 85.7 78.9 70.3 57.7 38.8 6.7 -32.7 -60.3 -76.7 -87.9 -96.0 -102.8 -108.5 -113.7 -118.3 -122.6 -126.8 -131.0 -135.1 -139.4 -143.7 -148.3 -153.0 -158.1 -163.5 -169.6 166.8 98.1 32.8 -3.3 -40.1 -91.7 -148.4 170.8 Download S-Parameters, click here 3 FMM5811GJ-1 17.7-23.6GHz Power Amplifier MMIC Case Style "GJ" Metal-Ceramic Hermetic Package 4-R 1.2±0.15 (0.047) 6-0.3 (0.012) 3.5 Max. (0.137) 1.3±0.15 (0.051) 3 11±0.15 (0.433) 15 (0.591) 7 (0.276) 3.8 (0.149) 4 5 6 7 (0.276) 0.9 (0.035) 1. 2. 3. 4. 5. 6. 7. VDD RFin VGG VGG RFout VDD GND (Flange) Unit: mm(inches) 2 1 7 6±0.15 (0.236) 12±0.15 (0.472) INDEX 1Min. (0.039) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not ingest. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2001 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0101M200 4