AUIRF2804S-7P

  AUIRF2804S-7P AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * HEXFET® Power MOSFET VDSS 40V   Package Type AUIRF2804S-7P D2Pak-7PIN 1.6m ID (Silicon Limited) 320A ID (Package Limited) 240A   Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Base Part Number RDS(on) max. D2Pak 7 Pin AUIRF2804S-7P G D S Gate Drain Source Standard Pack Form Quantity Tube 50 Tape and Reel Left 800 Complete Part Number AUIRF2804S-7P AUIRF2804S-7TRL Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Symbol Parameter Max. ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) 230 240 IDM PD @TC = 25°C Pulsed Drain Current  Maximum Power Dissipation 1360 330 VGS EAS EAS (tested) IAR EAR TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited)  Single Pulse Avalanche Energy Tested Value  Avalanche Current  Repetitive Avalanche Energy  Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance   Symbol RJC RCS RJA RJA Parameter Junction-to-Case  Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB Mount, steady state)  Units 320 A W 2.2 ± 20 630 1050 See Fig.12a,12b,15,16 W/°C V mJ A mJ -55 to + 175   300   °C  Typ. Max. Units ––– 0.50 ––– ––– 0.50 ––– 62 40 °C/W HEXFET® is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-11-11   AUIRF2804S-7P Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)   Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA ––– 0.028 ––– V/°C Reference to 25°C, ID = 1.0mA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 1.2 1.6 RDS(on) SMD Static Drain-to-Source On-Resistance m VGS = 10V, ID = 160A  VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 220 ––– ––– S VDS = 10V, ID = 160A ––– ––– 20 VDS = 40V, VGS = 0V Drain-to-Source Leakage Current µA IDSS ––– ––– 250 VDS = 40V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V IGSS   nA   Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -20V Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)   Symbol Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge ––– 170 260 ID = 160A Gate-to-Source Charge ––– 63 ––– Qgs nC   VDS = 32V VGS = 10V  Qgd Gate-to-Drain ("Miller") Charge ––– 71 ––– td(on) Turn-On Delay Time ––– 17 ––– VDD = 20V ID = 160A Rise Time ––– 150 ––– tr ns td(off) Turn-Off Delay Time ––– 110 ––– RG = 2.6 VGS = 10V  Fall Time ––– 100 ––– tf Between lead, Internal Drain Inductance ––– 4.5 ––– LD 6mm (0.25in.) nH   from package Internal Source Inductance ––– 7.5 ––– LS and center of die contact Input Capacitance ––– 6930 –––   VGS = 0V Ciss VDS = 25V Output Capacitance ––– 1750 –––   Coss Crss Reverse Transfer Capacitance ––– 970 ––– pF ƒ = 1.0 MHz, See Fig. 5 Output Capacitance ––– 5740 –––   VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance 1570 VGS = 0V, VDS = 32V, ƒ = 1.0MHz Coss   Coss eff. Effective Output Capacitance  ––– 2340 –––   VGS = 0V, VDS = 0V to 32V Diode Characteristics   Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol ––– ––– 320 IS (Body Diode) showing the A integral reverse Pulsed Source Current ISM ––– ––– 1360 (Body Diode)  p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 160A, VGS = 0V  ––– 43 65 trr   Reverse Recovery Time ns TJ = 25°C, IF = 160A, VDD = 20V ––– 48 72 Qrr Reverse Recovery Charge nC di/dt = 100A/µs  Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ton Forward Turn-On Time Notes:  Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 240A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140)  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11).  Limited by TJmax, starting TJ = 25°C, L=0.049mH, RG = 25, IAS = 160A, VGS =10V. Part not recommended for use above this value.  Pulse width  1.0ms; duty cycle 2%.  Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.  Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.  This value determined from sample failure population, starting TJ = 25°C, L= 0.049mH, RG = 25, IAS = 160A, VGS =10V.  This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note # AN-994.  R is measured at TJ of approximately 90°C. 2 2015-11-11   AUIRF2804S-7P 10000 10000 1000 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 4.5V 1000 BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 4.5V  60µs PULSE WIDTH Tj = 175°C  60µs PULSE WIDTH Tj = 25°C 10 10 0.1 1 10 0.1 100 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics 240 1000.0 Gfs, Forward Transconductance (S) ID, Drain-to-Source Current) TJ = 25°C 100.0 TJ = 175°C 10.0 TJ = 25°C 1.0 VDS = 20V 200 160 TJ = 175°C 120 80 40 VDS = 10V 380µs PULSE WIDTH  60µs PULSE WIDTH 0.1 0 2.0 3.0 4.0 5.0 6.0 7.0 VGS, Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 8.0 0 20 40 60 80 100 120 140 ID, Drain-to-Source Current (A) Fig. 4 Typical Forward Trans conductance vs. Drain Current 2015-11-11   AUIRF2804S-7P 14000 ID= 160A VGS, Gate-to-Source Voltage (V) 12000 Coss = Cds + Cgd 10000 C, Capacitance (pF) 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 8000 Ciss 6000 4000 Coss 2000 Crss 0 16 12 8 4 0 1 10 100 0 VDS , Drain-to-Source Voltage (V) 100 10000 ID, Drain-to-Source Current (A) TJ = 175°C 100.0 10.0 TJ = 25°C 1.0 VGS = 0V 0.4 0.8 1.2 1.6 200 250 300 2.0 OPERATION IN THIS AREA LIMITED BY R DS (on) 1000 100µsec 100 10 1 1msec Tc = 25°C Tj = 175°C Single Pulse 10msec DC 0.1 0.1 0.0 150 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000.0 ISD , Reverse Drain Current (A) 50 QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 2.4 VSD , Source-to-Drain Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage 4 VDS = 32V VDS= 20V 0 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 2015-11-11   AUIRF2804S-7P 2.0 ID, Drain Current (A) 300 RDS(on) , Drain-to-Source On Resistance (Normalized) 350 Limited By Package 250 200 150 100 50 ID = 160A VGS = 10V 1.5 1.0 0.5 0 25 50 75 100 125 150 -60 -40 -20 175 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) T C , Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Normalized On-Resistance vs. Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.01 J 0.02 0.01 R1 R1 J 1 R2 R2 C 2 1 2 Ci= iRi Ci= iRi C Ri (°C/W) i (sec) 0.1951 0.000743 0.3050 0.008219 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case  5 2015-11-11   AUIRF2804S-7P 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V tp A 0.01 Fig 12a. Unclamped Inductive Test Circuit EAS, Single Pulse Avalanche Energy (mJ) 2500 ID 21A 33A BOTTOM 160A TOP 2000 1500 1000 500 0 25 V(BR)DSS 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) tp Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Id Vds Vgs Qgs1 Qgs2 Qgd Qgodr Fig 13a. Basic Gate Charge Waveform VGS(th) Gate threshold Voltage (V) Vgs(th) 4.5 4.0 3.5 3.0 2.5 2.0 ID = 1.0A ID = 1.0mA ID = 250µA 1.5 1.0 0.5 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( °C ) Fig 14. Threshold Voltage vs. Temperature Fig 13b. Gate Charge Test Circuit  6 2015-11-11   AUIRF2804S-7P 10000 Duty Cycle = Single Pulse Avalanche Current (A) 1000 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 0.01 100 0.05 0.10 10 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs. Pulse width EAR , Avalanche Energy (mJ) 800 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 160A 600 400 200 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy vs. Temperature  7 Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav 2015-11-11   AUIRF2804S-7P Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms 8 2015-11-11   AUIRF2804S-7P D2Pak - 7 Pin Package Outline Dimensions are shown in millimeters (inches) D2Pak - 7 Pin Part Marking Information Part Number AUF2804S-7P Date Code YWWA IR Logo XX  Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/  9 2015-11-11   AUIRF2804S-7P D2Pak - 7 Pin Tape and Reel Note: For the most current drawing please refer to IR website at http://www.irf.com/package/   10 2015-11-11   AUIRF2804S-7P Qualification Information Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level D2 PAK 7 Pin Machine Model ESD Human Body Model Charged Device Model RoHS Compliant MSL1 † Class M4 (Per AEC-Q101-002) Class H3A† (per AEC-Q101-001) Class C5 † (per AEC-Q101-005) Yes † Highest passing voltage. Revision History Date 11/11/2015 Comments   Updated datasheet with corporate template Corrected ordering table on page 1. Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 11 2015-11-11