PD - 96321
AUTOMOTIVE GRADE
AUIRF2907ZS-7P
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
V(BR)DSS
D
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
75V
RDS(on) typ.
G
S
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
Description
3.0mΩ
max.
3.8mΩ
ID (Silicon Limited)
180A
j
D
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use
in Automotive applications and a wide variety of other
applications.
S
G
S
S
S
S
D2Pak 7 Pin
Absolute Maximum Ratings
G
D
S
Gate
Drain
Source
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those
indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods
may affect device reliability. The thermal resistance and power dissipation ratings are measured under board
mounted and still air conditions. Ambient temperature (T A) is 25°C, unless otherwise specified.
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
180
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
120
IDM
Pulsed Drain Current
700
PD @TC = 25°C
Maximum Power Dissipation
300
W
Linear Derating Factor
2.0
± 20
W/°C
V
160
mJ
c
VGS
EAS
Gate-to-Source Voltage
EAS (tested)
Single Pulse Avalanche Energy Tested Value
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
TJ
Operating Junction and
TSTG
Storage Temperature Range
Single Pulse Avalanche Energy (Thermally Limited)
c
g
d
c
A
410
A
See Fig.12a,12b,15,16
mJ
-55 to + 175
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
300
10 lbf•in (1.1N•m)
Thermal Resistance
RθJC
Junction-to-Case
i
Parameter
Typ.
Max.
–––
0.50
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
RθJA
Junction-to-Ambient
–––
62
RθJA
Junction-to-Ambient (PCB Mount, steady state)
–––
40
h
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
07/20/10
AUIRF2907ZS-7P
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
∆ΒVDSS/∆TJ
RDS(on) SMD
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
gfs
IDSS
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
Typ.
Max.
Units
75
–––
–––
2.0
94
–––
–––
–––
–––
–––
0.066
–––
–––
V
V/°C
3.0
–––
–––
–––
–––
–––
–––
3.8
4.0
–––
20
250
200
-200
mΩ
V
S
µA
nA
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 110A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 110A
VDS = 75V, VGS = 0V
VDS = 75V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
e
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
Typ.
Max.
–––
–––
–––
–––
–––
–––
–––
170
55
66
21
90
92
44
260
–––
–––
–––
–––
–––
–––
–––
4.5
–––
Units
nC
ns
e
e
nH
f
Conditions
ID = 110A
VDS = 60V
VGS = 10V
VDD = 38V
ID = 110A
RG = 2.6Ω
VGS = 10V
Between lead,
–––
7.5
–––
–––
–––
–––
–––
–––
–––
7580
970
540
3750
650
1110
–––
–––
–––
–––
–––
–––
pF
Min.
Typ.
Max.
Units
D
6mm (0.25in.)
from package
G
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 60V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
S
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
VSD
trr
Qrr
ton
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
c
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C,
L=0.026mH, RG = 25Ω, IAS = 110A, VGS =10V.
Part not recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80%
VDSS .
2
–––
–––
160
A
–––
–––
700
–––
–––
–––
–––
35
40
1.3
53
60
Conditions
MOSFET symbol
V
ns
nC
D
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = 110A, VGS = 0V
TJ = 25°C, IF = 110A, VDD = 38V
di/dt = 100A/µs
e
S
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
This value determined from sample failure population starting
TJ = 25°C, L=0.026mH, R G = 25Ω, IAS = 110A, VGS =10V.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Rθ is measured at TJ of approximately 90°C.
Solder mounted on IMS substrate.
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AUIRF2907ZS-7P
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
D2 PAK 7 Pin
MSL1
Class M4(425V)
(per AEC-Q101-002)
ESD
Human Body Model
Class H2(4000V)
(per AEC-Q101-001)
Charged Device Model
Class C4 (1000V)
(per AEC-Q101-005)
RoHS Compliant
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRF2907ZS-7P
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
BOTTOM
100
4.5V
10
4.5V
≤60µs PULSE WIDTH
≤60µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
10
1
0.1
1
10
100
0.1
1000
10
100
1000
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
200
Gfs, Forward Transconductance (S)
1000
ID, Drain-to-Source Current (Α)
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
100
T J = 25°C
10
T J = 175°C
1
VDS = 25V
≤60µs PULSE WIDTH
0.1
1
2
3
4
5
6
7
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
T J = 25°C
150
T J = 175°C
100
50
V DS = 10V
380µs PULSE WIDTH
0
8
0
25
50
75
100
125
150
ID,Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
vs. Drain Current
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AUIRF2907ZS-7P
100000
12.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 110A
C, Capacitance(pF)
C oss = C ds + C gd
10000
Ciss
Coss
1000
Crss
10.0
VDS= 15V
8.0
6.0
4.0
2.0
0.0
100
1
10
0
100
50
100
150
200
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
VDS= 60V
VDS= 38V
T J = 175°C
T J = 25°C
10
1
1000
1msec 100µsec
100
LIMITED BY PACKAGE
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
10msec
DC
0.1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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1.4
0.1
1.0
10.0
100.0
VDS, Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRF2907ZS-7P
200
RDS(on) , Drain-to-Source On Resistance
(Normalized)
3.0
ID, Drain Current (A)
160
120
80
40
ID = 180A
VGS = 10V
2.5
2.0
1.5
1.0
0.5
0
25
50
75
100
125
150
-60 -40 -20 0 20 40 60 80 100120140160180
175
T J , Junction Temperature (°C)
T C , Case Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
Fig 9. Maximum Drain Current vs.
Case Temperature
1
Thermal Response ( Z thJC )
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
τJ
SINGLE PULSE
( THERMAL RESPONSE )
0.001
R1
R1
τJ
τ1
R2
R2
τ2
τ1
τ2
Ci= τi/Ri
Ci i/Ri
R3
R3
τ3
τC
τ
τ3
Ri (°C/W) τi (sec)
0.1072
0.000096
0.2787
0.1143
0.002614
0.013847
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRF2907ZS-7P
15V
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
VGS
A
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
700
ID
24A
34A
BOTTOM 110A
TOP
600
500
400
300
200
100
0
V(BR)DSS
25
tp
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGD
4.5
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
VGS(th) Gate threshold Voltage (V)
QGS
4.0
3.5
3.0
2.5
2.0
ID = 250µA
ID = 1.0mA
ID = 1.0A
1.5
1.0
.2µF
.3µF
-75 -50 -25 0
D.U.T.
+
V
- DS
25 50 75 100 125 150 175 200
T J , Temperature ( °C )
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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Fig 14. Threshold Voltage vs. Temperature
7
AUIRF2907ZS-7P
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆ Tj = 25°C due to
avalanche losses
100
0.01
0.05
10
0.10
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
200
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 110A
150
100
50
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
vs. Temperature
8
175
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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AUIRF2907ZS-7P
D.U.T
Driver Gate Drive
+
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
• dv/dt controlled by RG
• Driver same type as D.U.T.
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D=
Period
P.W.
+
V DD
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V DS
V GS
RG
RD
D.U.T.
+
-V DD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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9
AUIRF2907ZS-7P
D2Pak - 7 Pin Package Outline
Dimensions are shown in millimeters (inches)
D2Pak - 7 Pin Part Marking Information
Part Number
AUIRF2907ZS-7
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF2907ZS-7P
D2Pak - 7 Pin Tape and Reel
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11
AUIRF2907ZS-7P
Ordering Information
Base part number
AUIRF2907ZS-7P
12
Package Type
D2Pak
Standard Pack
Form
Tube
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
50
800
800
AUIRF2907ZS-7P
AUIRF2907ZS7PTL
AUIRF2907ZS7PTR
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AUIRF2907ZS-7P
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make
corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any
product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions
of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty.
Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by
government requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications
using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and
operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied
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and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible
or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other
applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where
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costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated
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For technical support, please contact IR’s Technical Assistance Center
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