AUIRFR2407

AUTOMOTIVE GRADE AUIRFR2407  HEXFET® Power MOSFET Features x Advanced Planar Technology x Low On-Resistance x Dynamic dV/dT Rating x 175°C Operating Temperature x Fast Switching x Fully Avalanche Rated x Repetitive Avalanche Allowed up to Tjmax x Lead-Free, RoHS Compliant x Automotive Qualified * D-Pak typ. 21.8m: max. ID 26m: 42A (Silicon Limited) D G S D-Pak AUIRFR2407 G Gate D Drain Standard Pack Form Quantity Tube 75 Tape and Reel Left 3000 Package Type AUIRFR2407 75V RDS(on) Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Base part number VDSS  S Source Orderable Part Number AUIRFR2407 AUIRFR2407TRL Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Symbol Parameter Max. ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 42 ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Pulsed Drain Current c Maximum Power Dissipation 29 170 110 VGS EAS IAR EAR dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) d Avalanche Current c Repetitive Avalanche Energy c Pead Diode Recovery dv/dte Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance  Symbol RTJC RTJA RTJA Parameter Junction-to-Case i Junction-to-Ambient ( PCB Mount) h Junction-to-Ambient Units A W 0.71 ± 20 130 25 11 5.0 -55 to + 175 W/°C V mJ A mJ V/ns  300  °C Typ. Max. Units ––– ––– ––– 1.4 50 110 °C/W HEXFET® is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-11-23 AUIRFR2407  Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS 'V(BR)DSS/'TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 75 ––– ––– V VGS = 0V, ID = 250μA ––– 0.078 ––– V/°C Reference to 25°C, ID = 1mA ––– 21.8 26.0 m:VGS = 10V, ID = 25A f 2.0 ––– 4.0 V VDS = VGS, ID = 250μA 27 ––– ––– S VDS = 25V, ID = 25A f ––– ––– 25 VDS = 75 V, VGS = 0V μA ––– ––– 250 VDS = 60V,VGS = 0V,TJ =150°C ––– ––– 200 VGS = 20V nA ––– ––– -200 VGS = -20V Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time ––– ––– ––– ––– ––– ––– ––– 74 13 22 16 90 65 66 110 19 34 ––– ––– ––– ––– LD Internal Drain Inductance ––– 4.5 ––– LS Internal Source Inductance ––– 7.5 ––– Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– 2400 340 77 ––– ––– ––– Coss Output Capacitance ––– 15700 ––– Output Capacitance Coss Coss eff. Effective Output Capacitance Diode Characteristics  Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode)c VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time ID = 25A nC  VDS = 60V VGS = 10Vf VDD = 38V ID = 25A ns RG = 6.8: VGS = 10Vf Between lead, 6mm (0.25in.) nH  from package and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 pF  VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– ––– 220 220 ––– ––– VGS = 0V, VDS = 60V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 60V Min. Typ. Max. Units ––– ––– 42 ––– ––– 170 ––– ––– ––– ––– 100 400 1.3 150 600 Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25°C,IS = 25A,VGS = 0V f ns TJ = 25°C ,IF = 25A nC di/dt = 100A/μsf Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: c Repetitive rating; pulse width limited by max. junction temperature. d VDD = 25V, starting TJ = 25°C, L = 0.42mH, RG = 25:, IAS = 25A e ISD d25A, di/dt d290A/μs, VDD dV(BR)DSS, TJ d 175°C. f Pulse width d300μs; duty cycle d 2%. gCoss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. h When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 . i RT is measured at TJ approximately 90°C. 2 2015-11-23 AUIRFR2407  Fig. 1 Typical Output Characteristics Fig. 3 Typical Transfer Characteristics 3 Fig. 2 Typical Output Characteristics Fig. 4 Normalized On-Resistance Vs. Temperature 2015-11-23 AUIRFR2407  Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 Typical Source-to-Drain Diode Forward Voltage  4 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area 2015-11-23 AUIRFR2407  50 ID, Drain Current (A) 40 30 20 10 Fig 10a. Switching Time Test Circuit 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2015-11-23 AUIRFR2407  15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A 0.01: tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 13a. Gate Charge Waveform  6 Fig 13b. Gate Charge Test Circuit 2015-11-23 AUIRFR2407  Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs  7 2015-11-23 AUIRFR2407  D-Pak (TO-252AA) Package Outline (Dimensions are shown in millimeters (inches)) D-Pak (TO-252AA) Part Marking Information Part Number AUFR2407 YWWA IR Logo XX x Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 2015-11-23 AUIRFR2407  D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-11-23 AUIRFR2407  Qualification Information Qualification Level Moisture Sensitivity Level  Machine Model Human Body Model  ESD Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D-Pak MSL1 I-Pak Class M4 (+/-500V)† AEC-Q101-002 Class H1C (+/-2000V)† AEC-Q101-001 Class C5 (+/-2000V)† AEC-Q101-005 Yes † Highest passing voltage. Revision History Date 11/23/15 Comments x x Updated datasheet with corporate template Corrected ordering table on page 1. Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.  10 2015-11-23