AUIRFZ44V

PD - 96415 AUTOMOTIVE GRADE AUIRFZ44V HEXFET® Power MOSFET Features l l l l l l l l l D Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS 60V RDS(on) max. G 16.5mΩ ID S 55A D Description Specifically designed for Automotive applications, this stripe planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. G D S TO-220AB AUIRFZ44V G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt c c d c e Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw A W W/°C V mJ A mJ V/ns -55 to + 175 °C 300 (1.6mm from case ) 10 lbf in (1.1N m) y Thermal Resistance RθJC RθCS RθJA Units 55 39 220 115 0.77 ±20 115 55 11 4.5 y Parameter Typ. Max. Units Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient (PCB mounted) ––– 0.50 ––– 1.3 ––– 62 °C/W HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 11/1/11 AUIRFZ44V Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage Parameter 60 ––– ––– V Conditions ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.062 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) VGS(th) Static Drain-to-Source On-Resistance Gate Threshold Voltage ––– ––– 16.5 VGS = 10V, ID = 31A 2.0 ––– 4.0 mΩ V gfs IDSS Forward Transconductance 24 ––– ––– S VDS = 25V, ID = 31A Drain-to-Source Leakage Current ––– ––– 25 μA VDS = 60V, VGS = 0V ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 VGS = 0V, ID = 250μA f VDS = VGS, ID = 250μA f VDS = 48V, VGS = 0V, TJ = 150°C nA VGS = 20V VGS = -20V Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Qg Total Gate Charge ––– ––– 67 Qgs Gate-to-Source Charge ––– ––– 18 Qgd Gate-to-Drain ("Miller") Charge ––– ––– 25 td(on) Turn-On Delay Time ––– 13 ––– VDD = 30V tr Rise Time ––– 97 ––– ID = 51A td(off) Turn-Off Delay Time ––– 40 ––– tf Fall Time ––– 57 ––– LD Internal Drain Inductance LS Internal Source Inductance Ciss ––– 4.5 ––– ––– 7.5 ––– Input Capacitance ––– 1812 ––– Coss Output Capacitance ––– 393 ––– Crss Reverse Transfer Capacitance ––– 103 ––– Min. Typ. Max. ID = 51A nC VDS = 48V VGS = 10V, See Fig.6 and 13 ns RG = 9.1Ω RD = 0.6Ω, See Fig.10 Between lead, nH f f D 6mm (0.25in.) Between lead, G S and center of die contact VGS = 0V pF VDS = 25V ƒ = 1.0MHz, See Fig.5 Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current Units ––– ––– 55 ––– 220 VSD (Body Diode) Diode Forward Voltage ––– ––– ––– 2.5 V trr Reverse Recovery Time ––– 70 105 ns Qrr Reverse Recovery Charge ––– 146 219 nC ton Forward Turn-On Time c Conditions MOSFET symbol A showing the integral reverse D G p-n junction diode. TJ = 25°C, IS = 51A, VGS = 0V TJ = 25°C, IF = 51A di/dt = 100A/μs f S f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  ‚ ƒ „ Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25°C, L = 89μH, RG = 25Ω, IAS = 51A. (See Figure 12) ISD ≤ 51A, di/dt ≤ 227A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 300μs; duty cycle ≤ 2%. 2 www.irf.com AUIRFZ44V Qualification Information† Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. 3L-TO-220 N/A ††† Machine Model Class M3(+/- 400V ) (per AEC-Q101-002) ††† ESD Human Body Model Class H1B(+/- 1000V ) (per AEC-Q101-001) ††† Charged Device Model RoHS Compliant Class C5(+/- 2000V ) (per AEC-Q101-005) Yes † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report. ††† Highest passing voltage www.irf.com 3 AUIRFZ44V 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 100 10 4.5V 1 20μs PULSE WIDTH TJ = 25 °C 0.1 0.1 1 10 TJ = 175 ° C 10 V DS= 25V 20μs PULSE WIDTH 6 7 8 9 10 11 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 ° C 5 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 1000 4 20μs PULSE WIDTH TJ = 175 °C 1 0.1 100 Fig 1. Typical Output Characteristics 100 4.5V 10 VDS , Drain-to-Source Voltage (V) 1 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP TOP 12 3.0 ID = 55A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( ° C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com AUIRFZ44V 20 VGS = 0V, f = 1 MHZ Cis = Cgs + Cgd, Cds SHORTED VGS , Gate-to-Source Voltage (V) C, Capacitance(pF) 4000 Crss = Cgd Coss = Cds + Cgd 3000 2000 Ciss 1000 Coss ID = 51A 16 12 8 4 Crss 0 1 10 0 100 0 20 40 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) TJ = 175 ° C 100 10us 100 TJ = 25 ° C 10 1 VGS = 0 V 0.7 1.2 1.7 2.2 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 80 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 0.1 0.2 60 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) ISD , Reverse Drain Current (A) V DS= 48V V DS= 30V V DS= 12V 100us 10 1 1ms TC = 25 °C TJ = 175 °C Single Pulse 1 10ms 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRFZ44V 60 RD VDS ID , Drain Current (A) 50 VGS D.U.T. RG 40 + V DD - 10V 30 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 175 VDS 90% 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response(Z thJC ) 10 1 D = 0.50 0.20 0.10 PDM 0.05 0.1 0.02 0.01 0.01 0.00001 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com 15V L VDS D.U.T RG 20V IAS DRIVER + V - DD A 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS EAS , Single Pulse Avalanche Energy (mJ) AUIRFZ44V 250 ID 21A 36A BOTTOM 51A TOP 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature ( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp Current Regulator Same Type as D.U.T. I AS 50KΩ 12V .2μF .3μF D.U.T. Fig 12b. Unclamped Inductive Waveforms + V - DS VGS 3mA IG ID Current Sampling Resistors QG Fig 13b. Gate Charge Test Circuit 10 V QGS QGD VG Charge Fig 13a. Basic Gate Charge Waveform www.irf.com 7 AUIRFZ44V Peak Diode Recovery dv/dt Test Circuit + D.U.T ƒ Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + ‚ - - „ +  RG • • • • Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - V DD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% * ISD VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS 8 www.irf.com AUIRFZ44V TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information Part Number AUFZ44V YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 AUIRFZ44V Ordering Information Base part AUIRFZ44V 10 Package Type TO-220 Standard Pack Form Tube Complete Part Number Quantity 50 AUIRFZ44V www.irf.com AUIRFZ44V IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. 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