BAS5202VH6327XTSA1

BAS52... Silicon Schottky Diode • Medium current rectifier Schottky diode • Low forward voltage at 200mA • High reverse voltage • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BAS52-02V  ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Configuration Marking BAS52-02V SC79 single y Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 45 V Forward current IF 750 mA 500 mA Average rectified forward current (50/60Hz, sinus) IFAV Non-repetitive peak surge forward current Value Unit IFSM 2000 Ptot 500 mW Junction temperature Tj 150 °C Storage temperature Tstg Thermal Resistance Parameter Symbol Junction - soldering point 2) RthJS t = 100 µs Total power dissipation TS ≤ 110°C -65 ... 150 Value Unit ≤ 60 K/W 1Pb-containing 2For package may be available upon special request calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-04-19 BAS52... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. max. DC Characteristics Reverse current IR VR = 45 V - - 10 VR = 5 V, TA = 70 °C - - 30 VR = 10 V - - 1 VR = 10 V, TA = 85 °C - - 80 Forward voltage Unit µA mV VF IF = 10 mA - 335 420 IF = 100 mA - 430 530 IF = 200 mA 400 500 600 - 5 10 AC Characteristics Diode capacitance CT pF VR = 10 V, f = 1 MHz 2 2007-04-19 BAS52... Reverse current IR = ƒ (TA) Reverse current IR = ƒ(VR) TA = Parameter VR = Parameter 10 -3 A 10 -3 A 10 -4 10 -4 10 -5 10 -5 IR IR 125°C 10 -6 85°C 25°C 10 -6 VR=10V 10 -7 10 -7 VR=5V 10 -8 10 -8 10 -9 10 -9 10 -10 -50 -30 -10 10 30 50 70 90 °C -40°C 10 -10 0 130 10 20 30 40 TA V 55 VR Forward Voltage VF = ƒ (TA) Forward current IF = ƒ (VF) IF = Parameter TA = Parameter 10 0 580 V A 500 IF=200mA 10 -1 IF=100mA IF VF 460 420 380 340 IF=10mA -40 °C 25 °C 85 °C 125 °C 10 -2 300 260 220 180 -50 -30 -10 10 30 50 70 90 °C 10 -3 0 130 TA 0.1 0.2 0.3 0.4 0.5 0.6 V 0.8 VF 3 2007-04-19 BAS52... Permissible Reverse voltage VR = ƒ (TA) Forward current IF = ƒ (T S) tp = Parameter Duty cycle < 0.01 50 800 V mA tp=300µs tp=100ms DC 40 600 IF VR 35 30 25 500 400 20 300 15 200 10 100 5 0 0 20 40 60 80 100 120 °C 0 0 160 15 30 45 60 90 105 120 °C 75 TA 150 TS Permissible Puls Load R thJS = ƒ (tp) Permissible Pulse Load IFmax / I FDC = ƒ (t p) 10 2 10 2 IFmax/IFDC RthJS K/W 10 1 10 0 10 -1 -6 10 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 tp D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 2007-04-19 Package SC79 BAS52... Package Outline 0.2 M A +0.05 0.13 -0.03 0.8 ±0.1 0.2 ±0.05 10˚MAX. 1.6 ±0.1 1 0.3 ±0.05 Cathode marking 10˚MAX. 1.2 ±0.1 A 2 0.55 ±0.04 0.35 1.35 Foot Print 0.35 Marking Layout (Example) 2005, June Date code BAR63-02V Type code Cathode marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø180 mm = 8.000 Pieces/Reel (2 mm Pitch) Reel ø330 mm = 10.000 Pieces/Reel Cathode marking 0.4 0.93 0.2 8 1.96 Reel with 2 mm Pitch 2 1.33 Standard 4 Cathode marking 5 0.66 2007-04-19 BAS52... Date Code marking for discrete packages with one digit (SCD80, SC79, SC75 1) ) CES-Code Month 2 0 03 2 0 04 2005 2006 2 0 07 2008 2009 2010 2011 2012 2 0 13 2014 01 a p A P a p A P a p A P 02 b q B Q b q B Q b q B Q 03 c r C R c r C R c r C R 04 d s D S d s D S d s D S 05 e t E T e t E T e t E T 06 f u F U f u F U f u F U 07 g v G V g v G V g v G V 08 h x H X h x H X h x H X 09 j y J Y j y J Y j y J Y 10 k z K Z k z K Z k z K Z 11 l 2 L 4 l 2 L 4 l 2 L 4 12 n 3 N 5 n 3 N 5 n 3 N 5 1) New Marking Layout for SC75, implemented at October 2005. . 6 2007-04-19 BAS52... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2007-04-19