BCW60FNE6393HTSA1

BCW60, BCX70 NPN Silicon AF Transistors
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BCW61, BCX71 (PNP) 2 1 Type Marking Pin Configuration BCW60A AAs 1=B 2=E 3=C SOT23 BCW60B ABs 1=B 2=E 3=C SOT23 BCW60C ACs 1=B 2=E 3=C SOT23 BCW60D ADs 1=B 2=E 3=C SOT23 BCW60FF AFs 1=B 2=E 3=C SOT23 BCW60FN ANs 1=B 2=E 3=C SOT23 BCX70G AGs 1=B 2=E 3=C SOT23 BCX70H AHs 1=B 2=E 3=C SOT23 BCX70J AJs 1=B 2=E 3=C SOT23 BCX70K AKs 1=B 2=E 3=C SOT23 1 VPS05161 Package Jan-29-2002 BCW60, BCX70 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 32 32 45 Collector-base voltage VCBO 32 32 45 Emitter-base voltage VEBO 5 5 5 DC collector current IC 100 Peak collector current ICM 200 Peak base current IBM 200 Total power dissipation, TS = 71 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg BCW60 BCW60FF BCX70 Unit V mA -65 ... 150 Thermal Resistance Junction - soldering point 1)
240 RthJS K/W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BCW60/60FF 32 - - BCX70 45 - - BCW60/60FF 32 - - BCX70 45 - - 5 - - Collector-base breakdown voltage IC = 10 µA, IB = 0 V V(BR)CEO V(BR)CBO Emitter-base breakdown voltage V(BR)EBO IE = 1 µA, IC = 0 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Jan-29-2002 BCW60, BCX70 Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. typ. Unit max. AC Characteristics Collector cutoff current nA ICBO VCB = 32 V, IE = 0 BCW60 /60FF - - 20 VCB = 45 V, IE = 0 BCX70 - - 20 Collector cutoff current µA ICBO VCB = 32 V, IE = 0 , TA = 150 °C BCW60 / 60FF - - 20 VCB = 45 V, IE = 0 , TA = 150 °C BCX70 - - 20 - - 20 Emitter cutoff current IEBO nA VEB = 4 V, IC = 0 DC current gain 1) IC = 10 µA, VCE = 5 V hFE-grp. A/ G 20 140 - hFE-grp. B/ H 20 200 - hFE-grp. C/ J/ FF 40 300 - hFE-grp. D/ K/ FN 100 460 - hFE-grp. A/ G 120 170 220 hFE-grp. B/ H 180 250 310 hFE-grp. C/ J/ FF 250 350 460 hFE-grp. D/ K/ FN 380 500 630 hFE-grp. A/ G 50 - - hFE-grp. B/ H 70 - - hFE-grp. C/ J/ FF 90 - - hFE-grp. D/ K/ FN 100 - - hFE DC current gain 1) IC = 2 mA, VCE = 5 V DC current gain 1) IC = 50 mA, VCE = 1 V - hFE hFE 1) Pulse test: t ≤=300µs, D = 2% 3 Jan-29-2002 BCW60, BCX70 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter saturation voltage1) V VCEsat IC = 10 mA, IB = 0.25 mA - 0.12 0.25 IC = 50 mA, IB = 1.25 mA - 0.2 0.55 IC = 10 mA, IB = 0.25 mA - 0.7 0.85 IC = 50 mA, IB = 1.25 mA - 0.83 1.05 IC = 10 µA, VCE = 5 V - 0.52 - IC = 2 mA, VCE = 5 V 0.55 0.65 0.75 IC = 50 mA, VCE = 1 V - 0.78 - fT - 250 - MHz Ccb - 3 - pF Ceb - 8 - Base-emitter saturation voltage 1) VBEsat Base-emitter voltage 1) VBE(ON) AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz k
Short-circuit input impedance hFE-grp. IC = 2 mA, VCE = 5 V, f = 1 kHz A/G - 2.7 - B/H - 3.6 - C / J / FF - 4.5 - D / K / FN - 7.5 - h11e Open-circuit reverse voltage transf.ratio | hFE-grp. h12e IC = 2 mA, VCE = 5 V, f = 1 kHz A/G 10-4 - 1.5 - B/H - 2 - C / J/FF - 2 - D / K / FN - 3 - 1) Pulse test: t ≤=300µs, D = 2% 4 Jan-29-2002 BCW60, BCX70 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC Characteristics Short-circuit forward current transf.ratio | hFE-grp. h21e IC = 2 mA, VCE = 5 V, f = 1 kHz A/G - 200 - B/H - 260 - C / J/ FF - 330 - D / K / FN - 520 -
S Open-circuit output admittance hFE-grp. IC = 2 mA, VCE = 5 V, f = 1 kHz A/G - 18 - B/H - 24 - C / J / FF - 30 - D / K / FN - 50 - Noise figure hFE-grp. h22e dB F IC = 100 µA, VCE = 5 V, RS = 1 k, f = 1 kHz,  f = 200 Hz Equivalent noise voltage A-K - 2 - FF - FN - 1 2 - - 0.135 hFE-grp. IC = 200 µA, VCE = 5 V, RS = 2 k, f = 10 ... 50 Hz Vn µV FF / FN 5 Jan-29-2002 BCW60, BCX70 Total power dissipation Ptot = f(TS) Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO) 360 12 mW BCW 60/BCX 70 EHP00327 CCBO pF (C EBO) 300 10 P tot 270 240 8 CEBO 210 6 180 150 4 120 CCBO 90 2 60 30 0 0 15 30 45 60 75 0 10 -1 °C 150 TS 90 105 120 V 10 1 V CBO (V EBO ) 10 0 Permissible pulse load Transition frequency fT = f (IC) Ptotmax / PtotDC = f (tp ) VCE = 5V 10 3 BCW 60/BCX 70 EHP00328 Ptot max 5 Ptot DC D= 10 3 tp tp T BCW 60/BCX 70 EHP00330 MHz fT T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 10 2 5 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 1 10 -1 0 10 0 10 1 mA 10 2 ΙC tp 6 Jan-29-2002 BCW60, BCX70 Base-emitter saturation voltage Collector-emitter saturation voltage IC = f (VBEsat ), hFE = 40 IC = f (VCEsat), h FE = 40 10 2 ΙC BCW 60/BCX 70 EHP00331 10 2 mA ΙC 100 ˚C 25 ˚C -50 ˚C 10 1 10 0 10 0 5 5 0.4 100 ˚C 25 ˚C -50 ˚C 10 1 5 0.2 0.6 0.8 V 10 -1 0 1.2 EHP00332 mA 5 10 -1 0 BCW 60/BCX 70 0.1 0.2 0.3 V BE sat DC current gain hFE = f (I C) VCE = 5V VCE = 5V ΙC BCW 60/BCX 70 V 0.5 V CEsat Collector current IC = f (VBE) 10 2 0.4 EHP00333 10 3 mA h FE 5 BCW 60/BCX 70 EHP00334 100 ˚C 25 ˚C 10 1 10 2 5 -50 ˚C 5 10 0 5 10 1 100 ˚C 10 -1 25 ˚C -50 ˚C 5 5 10 -2 0 0.5 V 10 0 10 -2 1.0 10 -1 10 0 10 1 mA 10 2 ΙC V BE 7 Jan-29-2002 BCW60, BCX70 Collector cutoff current ICBO = f (TA) h parameter he = f (IC) normalized VCB = VCEmax VCE = 5V 10 4 nA BCW 60/BCX 70 EHP00335 10 2 Ι CBO he BCW 60/BCX 70 EHP00336 5 10 3 h 11e 10 max 10 2 VCE = 5 V 1 5 h 12e 10 1 10 0 h 21e 5 typ 10 0 h 22e 10 -1 0 50 100 ˚C 10 -1 10 -1 150 5 10 0 ΙC TA h parameter he = f (VCE ) normalized Noise figure F = f (V CE) IC = 2mA IC = 0.2mA, R S = 2k, f = 1kHz 2.0 BCW 60/BCX 70 EHP00337 20 Ι C = 2 mA he 10 1 mA F BCW 60/BCX 70 EHP00338 dB 1.5 h 21e h 11e 15 1.0 h 12e 10 h 22e 0.5 0 5 0 10 20 V 0 10 -1 30 VCE 10 0 10 1 V 10 2 VCE 8 Jan-29-2002 BCW60, BCX70 Noise figure F = f (f) Noise figure F = f (IC) IC = 0.2mA, VCE = 5V, RS = 2k VCE = 5V, f = 120Hz 20 F BCW 60/BCX 70 EHP00339 20 dB F BCW 60/BCX 70 EHP00340 dB 15 15 10 10 RS = 1 MΩ 100 k Ω 10 k Ω 500 Ω 5 5 1 kΩ 0 10 -2 10 -1 10 0 10 1 0 10 -3 kHz 10 2 10 -2 10 -1 Noise figure F = f (IC ) Noise figure F = f (IC) VCE = 5V, f = 1kHz VCE = 5V, f = 10kHz F BCW 60/BCX 70 EHP00341 20 dB F 15 R S = 1 MΩ BCW 60/BCX 70 EHP00342 dB RS = 1 M Ω 15 100 kΩ 10 kΩ 100 k Ω 10 10 10 k Ω 500 Ω 1 kΩ 5 5 1 kΩ 500 Ω 0 10 -3 mA 10 1 ΙC f 20 10 0 10 -2 10 -1 0 10 -3 mA 10 1 10 0 ΙC 10 -2 10 -1 10 0 mA 10 1 ΙC 9 Jan-29-2002