BFN18H6327XTSA1

BFN18 NPN Silicon High-Voltage Transistors Data Sheet Revision 1.0, 2010-10-13 RF & Protection Devices Edition 2010-10-13 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BFN18 Revision History Page or Item Subjects (major changes since previous revision) Revision 1.0, 2010-10-13 Converted to the new IFX Template. Trademarks of Infineon Technologies AG AURIX™, BlueMoon™, COMNEON™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™, CORECONTROL™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, EUPEC™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, I²RF™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™, PRIMARION™, PrimePACK™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SMARTi™, SmartLEWIS™, TEMPFET™, thinQ!™, TriCore™, TRENCHSTOP™, X-GOLD™, XMM™, X-PMU™, XPOSYS™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, PRIMECELL™, REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2010-06-09 Data Sheet 3 Revision 1.0, 2010-10-13 BFN18 Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 Package Information SOT89 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Data Sheet 4 Revision 1.0, 2010-10-13 NPN Silicon High-Voltage Transistors 1 BFN18 Features Main features: • • • • • • Suitable for video output stages TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary types: BFN19 (PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 SOT89-3D 1) Pb-containing package may be available upon special request Product Name Package BFN18 SOT89 Data Sheet Pin Configuration 1=B 2=C 7 3=E Marking 4=C DE Revision 1.0, 2010-10-13 BFN18 Electrical Characteristics 2 Electrical Characteristics Table 1 Absolute Maximum Ratings Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Collector-emitter voltage VCEO – – 300 V – Collector-base voltage VCBO – – 300 V – Emitter-base voltage VEBO – – 5 V – Collector current IC – – 200 mA – Peak collector current ICM – – 500 mA – Base current IB – – 100 mA – Peak base current IBM – – 200 mA – Total power dissipationTS = 120 °C Ptot – – 1.5 W – Junction temperature Tj – – 150 °C – Storage temperature Tstg -65 – 150 °C – Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the device. Table 2 Thermal Resistance Parameter Symbol Values Min. Typ. 1) 6 Note / Test Condition K/W – Max. Junction - soldering point RthJS – – ≤ 20 1) For calculation of RthJA please refer to Application Note Thermal Resistance. Data Sheet Unit Revision 1.0, 2010-10-13 BFN18 Electrical Characteristics Table 3 DC Characteristics at TA = 25 °C, Unless Otherwise Specified Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Collector emitter breakdown voltage V(BR)CEO 300 – – V IC = 1 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 300 – – V IC = 100 µA, IE = 0 Emitter-base breakdown voltage V(BR)EBO 5 – – V IE = 100 µA, IC = 0 Collector-base cutoff current ICBO – – 0.1 µA VCB = 250 V, IE = 0 – – 20 IEBO – – 100 hFE 25 – – IC = 1 mA, VCE = 10 V 40 – – IC = 10 mA, VCE = 10 V 30 – – IC = 30 mA, VCE = 10 V VCEsat – – 0.5 V IC = 20 mA, IB = 2 mA VBEsat – – 0.9 V IC = 20 mA, IB = 2 mA Emitter-base cutoff current DC current gain 1) 1) Collector-emitter saturation voltage 1) Base emitter saturation voltage 1)Pulse test: t < 300 µs; D < 2% Table 4 VCB = 250 V, IE = 0, TA = 150°C nA VEB = 5 V, IC = 0 AC Characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Transition frequency fT – 70 – MHz IC = 20 MHz, VCE = 10 V, f = 20 MHz Collector base capacitance CCb – 1.5 – pF VCB = 30 V, f = 1 MHz Data Sheet 7 Revision 1.0, 2010-10-13 BFN18 Characteristic DC Diagrams 3 Characteristic DC Diagrams DC Current Gain hFE = f(IC), VCE = 10 V 10 3 Operating Range IC = f(VCEO), TA = 25°C, D = 0 BFN 16/18 EHP00585 10 3 BFN 16/18 EHP00580 mA 5 ΙC h FE 10 μ s 10 2 5 10 2 100 μ s 1ms 100 ms 5 10 1 5 10 DC 1 10 0 5 5 10 0 -1 10 5 10 0 5 10 1 2 5 10 mA 10 ΙC 10 -1 10 0 3 5 10 2 V 5 10 3 V CEO Collector Current Collector Cutoff Current ICBO = f(TA), VCBO = 200 V IC = f(VBE), VCE = 10 V 10 3 5 10 1 BFN 16/18 EHP00582 10 4 nA mA ΙC Ι CBO 10 2 BFN 16/18 EHP00584 max 10 3 5 5 10 2 5 10 1 5 typ 10 1 5 10 0 10 0 5 5 10 -1 0 0.5 10 -1 V 1.5 1.0 50 ˚C 100 150 TA V BE Data Sheet 0 8 Revision 1.0, 2010-10-13 BFN18 Characteristic DC Diagrams Collector Base Capacitance Ccb = f(VCB) Emitter Base Capacitance Ceb = f(VEB) Transition Frequency fT = f(IC), VCE = 10 V 10 3 BFN 16/18 EHP00583 90 80 fT MHz 70 10 Ccb, Ceb [pF] 60 2 5 50 Ceb 40 30 20 10 Ccb 10 1 10 0 5 10 1 5 0 10 2 mA 5 10 3 ΙC 0 5 10 15 25 Permissible Pulse Load Ptotmax / PtotDC = f(TS) Total Power Dissipation Ptot = f(TS) 10 3 2 BFN 16/18 Ptot max 5 Ptot DC 1.8 EHP00581 D= 1.6 tp tp T T 1.4 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.2 Ptot [W] 20 Vcb, Veb [V] 5 1 0.8 10 1 0.6 5 0.4 0.2 0 0 50 100 10 0 10 -6 150 Ts [°C] Data Sheet 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 9 Revision 1.0, 2010-10-13 BFN18 Package Information SOT89 4 Package Information SOT89 4.5 ±0.1 45˚ B 1.5 ±0.1 0.2 MAX. 2 2.75 +0.1 -0.15 3 1.5 0.35 ±0.1 0.45 +0.2 -0.1 3 0.15 M B x3 0.2 B 1) Ejector pin markings possible Figure 1 1.6 ±0.2 1±0.2 1 1) 0.15 4 ±0.25 1±0.1 1) 2.5±0.1 0.25 ±0.05 SOT89-PO V02 Package Outline 1.2 1.0 2.5 2.0 0.8 0.8 0.7 SOT89-FP V02 Figure 2 Package Foot Print BAW78D Type code GA Pin 1 S 56 2005, June Date code (YM) Manufacturer SOT 89 -M A.vsd Figure 3 Data Sheet Marking Example 10 Revision 1.0, 2010-10-13 BFN18 Package Information SOT89 Pin 1 4.3 12 4.6 8 1.6 SOT89-TP V02 Figure 4 Tape Dimensions Packing Description Reel Ø180 mm = 1.000 Pieces/Reel Reel Ø330 mm = 4.000 Pieces/Reel Data Sheet 11 Revision 1.0, 2010-10-13 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG