BFP720FESDH6327XTSA1

BFP720FESD SiGe:C NPN RF bipolar transistor Product description The BFP720FESD is a wideband RF heterojunction bipolar transistor (HBT) with an integrated ESD protection. Feature list • • • • Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power, 2 kV HBM ESD hardness High transition frequency fT = 45 GHz to enable low noise figure at high frequencies: NFmin = 0.8 dB at 5.5 GHz, 3 V, 5 mA High gain Gms = 22 dB at 5.5 GHz, 3 V, 15 mA OIP3 = 21 dBm at 5.5 GHz, 3 V, 15 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications • • • • Wireless communications: WLAN, WiMax and UWB Satellite communication systems: GNSS navigation systems (GPS, GLONASS, BeiDou, Galileo), satellite radio (SDARs, DAB) and C-band LNB Multimedia applications such as portable TV, CATV and FM radio ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications Device information Table 1 Part information Product name / Ordering code Package BFP720FESD / BFP720FESDH6327XTSA1 TSFP-4-1 Pin configuration 1=B 2=E 3=C 4=E Marking Pieces / Reel T3s 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document v2.0 2018-09-26 BFP720FESD SiGe:C NPN RF bipolar transistor Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 3.1 3.2 3.3 3.4 3.5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4 Package information TSFP-4-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Datasheet 2 v2.0 2018-09-26 BFP720FESD SiGe:C NPN RF bipolar transistor Absolute maximum ratings 1 Absolute maximum ratings Table 2 Absolute maximum ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Values Min. Collector emitter voltage Collector base voltage 1) Collector emitter voltage 2) VCEO – VCBO VCES Unit Note or test condition V Open base Max. 4.2 3.7 TA = -55 °C, open base 4.9 Open emitter 4.4 TA = -55 °C, open emitter 4.2 E-B short circuited 3.7 TA = -55 °C, E-B short circuited Base current IB -10 3 mA – Collector current IC – 30 RF input power PRFin – 21 dBm ESD stress pulse VESD -2 2 kV HBM, all pins, acc. to JESD22-A114 Total power dissipation 3) Ptot – 100 mW TS ≤ 109 °C Junction temperature TJ – 150 °C – Storage temperature TStg -55 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit. 1 2 3 VCBO is similar to VCEO due to design. VCES is identical to VCEO due to design. TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB. Datasheet 3 v2.0 2018-09-26 BFP720FESD SiGe:C NPN RF bipolar transistor Thermal characteristics 2 Thermal characteristics Table 3 Thermal resistance Parameter Symbol Junction - soldering point RthJS Values Min. Typ. Max. – 405 – Unit Note or test condition K/W – 120 100 Ptot [mW] 80 60 40 20 0 0 25 50 75 T [°C] 100 125 150 S Figure 1 Datasheet Total power dissipation Ptot = f(TS) 4 v2.0 2018-09-26 BFP720FESD SiGe:C NPN RF bipolar transistor Electrical characteristics 3 Electrical characteristics 3.1 DC characteristics Table 4 DC characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note or test condition V IC = 1 mA, IB = 0, open base Collector emitter breakdown voltage V(BR)CEO 4.2 4.7 – Collector emitter leakage current ICES – – 400 1) nA VCE = 2 V, VBE = 0, E-B short circuited Collector base leakage current ICBO 400 1) VCB = 2 V, IE = 0, open emitter Emitter base leakage current IEBO 10 1) DC current gain hFE 160 3.2 General AC characteristics Table 5 General AC characteristics at TA = 25 °C Parameter Symbol 250 μA 400 Values Min. Typ. Max. – 45 – VEB = 0.5 V, IC = 0, open collector VCE = 3 V, IC = 15 mA, pulse measured Unit Note or test condition GHz VCE = 3 V, IC = 15 mA, f = 1 GHz pF VCB = 3 V, VBE = 0, f = 1 MHz, emitter grounded Transition frequency fT Collector base capacitance CCB 0.05 Collector emitter capacitance CCE 0.35 VCE = 3 V, VBE = 0, f = 1 MHz, base grounded Emitter base capacitance CEB 0.4 VEB = 0.4 V, VCB = 0, f = 1 MHz, collector grounded 1 Maximum values not limited by the device but by the short cycle time of the 100% test. Datasheet 5 v2.0 2018-09-26 BFP720FESD SiGe:C NPN RF bipolar transistor Electrical characteristics 3.3 Frequency dependent AC characteristics Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C. VC Top View Bias-T OUT C E VB B Bias-T E (Pin 1) IN Figure 2 Testing circuit Table 6 AC characteristics, VCE = 3 V, f = 150 MHz Parameter Symbol Values Min. Typ. Max. Unit Note or test condition Power gain • Maximum power gain • Transducer gain Gms |S21|2 – 38.5 30.5 – dB IC = 15 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass – 0.5 29 – dB IC = 5 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB – 21.5 6 – dBm ZS = ZL = 50 Ω IC = 15 mA Datasheet 6 v2.0 2018-09-26 BFP720FESD SiGe:C NPN RF bipolar transistor Electrical characteristics Table 7 AC characteristics, VCE = 3 V, f = 450 MHz Parameter Symbol Values Min. Typ. Max. Unit Note or test condition Power gain • Maximum power gain • Transducer gain Gms |S21|2 – 33.5 30 – dB IC = 15 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass – 0.5 27.5 – dB IC = 5 mA – 21.5 6 – dBm ZS = ZL = 50 Ω IC = 15 mA Unit Note or test condition Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Table 8 AC characteristics, VCE = 3 V, f = 900 MHz Parameter Symbol Values Min. Typ. Max. Power gain • Maximum power gain • Transducer gain Gms |S21|2 – 30.5 28.5 – dB IC = 15 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass – 0.55 25.5 – dB IC = 5 mA – 22 6.5 – dBm ZS = ZL = 50 Ω IC = 15 mA Unit Note or test condition Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Table 9 AC characteristics, VCE = 3 V, f = 1.5 GHz Parameter Symbol Values Min. Typ. Max. Power gain • Maximum power gain • Transducer gain Gms |S21|2 – 28 26 – dB IC = 15 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass – 0.55 23.5 – dB IC = 5 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB – 22 7 – dBm ZS = ZL = 50 Ω IC = 15 mA Datasheet 7 v2.0 2018-09-26 BFP720FESD SiGe:C NPN RF bipolar transistor Electrical characteristics Table 10 AC characteristics, VCE = 3 V, f = 1.9 GHz Parameter Symbol Values Min. Typ. Max. Unit Note or test condition Power gain • Maximum power gain • Transducer gain Gms |S21|2 – 27 25 – dB IC = 15 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass – 0.55 22.5 – dB IC = 5 mA – 22 7 – dBm ZS = ZL = 50 Ω IC = 15 mA Unit Note or test condition Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Table 11 AC characteristics, VCE = 3 V, f = 2.4 GHz Parameter Symbol Values Min. Typ. Max. Power gain • Maximum power gain • Transducer gain Gms |S21|2 – 26 23.5 – dB IC = 15 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass – 0.6 21 – dB IC = 5 mA – 22 7 – dBm ZS = ZL = 50 Ω IC = 15 mA Unit Note or test condition Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Table 12 AC characteristics, VCE = 3 V, f = 3.5 GHz Parameter Symbol Values Min. Typ. Max. Power gain • Maximum power gain • Transducer gain Gms |S21|2 – 24.5 20.5 – dB IC = 15 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass – 0.65 19 – dB IC = 5 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB – 21.5 7 – dBm ZS = ZL = 50 Ω IC = 15 mA Datasheet 8 v2.0 2018-09-26 BFP720FESD SiGe:C NPN RF bipolar transistor Electrical characteristics Table 13 AC characteristics, VCE = 3 V, f = 5.5 GHz Parameter Symbol Values Min. Typ. Max. Unit Note or test condition Power gain • Maximum power gain • Transducer gain Gms |S21|2 – 22 17 – dB IC = 15 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass – 0.8 16 – dB IC = 5 mA – 21 7 – dBm ZS = ZL = 50 Ω IC = 15 mA Unit Note or test condition Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Table 14 AC characteristics, VCE = 3 V, f = 10 GHz Parameter Symbol Values Min. Typ. Max. Power gain • Maximum power gain • Transducer gain Gma |S21|2 – 15 11 – dB IC = 15 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass – 1.3 10 – dB IC = 5 mA – 20 6 – dBm ZS = ZL = 50 Ω IC = 15 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Note: Datasheet Gms = IS21 / S12 I for k < 1; Gma = IS21 / S12 I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all measured results. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz. 9 v2.0 2018-09-26 BFP720FESD SiGe:C NPN RF bipolar transistor Electrical characteristics 3.4 Characteristic DC diagrams 35 30 IB=165µA IB=145µA IC [mA] 25 IB=125µA 20 IB=105µA 15 IB=65µA IB=85µA IB=45µA 10 IB=25µA 5 IB=5µA 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VCE [V] Figure 3 Collector current vs. collector emitter voltage IC = f(VCE), IB = parameter hFE 1000 100 0.1 1 10 100 IC [mA] Figure 4 DC current gain hFE = f(IC), VCE = 3 V Datasheet 10 v2.0 2018-09-26 BFP720FESD SiGe:C NPN RF bipolar transistor Electrical characteristics 100 10 IC [mA] 1 0.1 0.01 0.001 0.0001 0.00001 0.4 0.5 0.6 0.7 0.8 0.9 VBE [V] Figure 5 Collector current vs. base emitter voltage IC = f(VBE), VCE = 2 V 1 0.1 IB [mA] 0.01 0.001 0.0001 0.00001 0.000001 0.4 0.5 0.6 0.7 0.8 0.9 VBE [V] Figure 6 Datasheet Base current vs. base emitter forward voltage IB = f(VBE), VCE = 2 V 11 v2.0 2018-09-26 BFP720FESD SiGe:C NPN RF bipolar transistor Electrical characteristics 1.E-04 1.E-05 IB [A] 1.E-06 1.E-07 1.E-08 1.E-09 1.E-10 1.E-11 0.3 0.4 0.5 0.6 0.7 0.8 VEB [V] Figure 7 Datasheet Base current vs. base emitter reverse voltage IB = f(VEB), VCE = 2 V 12 v2.0 2018-09-26 BFP720FESD SiGe:C NPN RF bipolar transistor Electrical characteristics 3.5 Characteristic AC diagrams 50 4.00V 3.00V 45 40 35 2.00V fT [GHz] 30 25 20 15 10 1.00V 5 0 Figure 8 0 5 10 15 IC [mA] 20 25 30 Transition frequency fT = f(IC), f = 1 GHz, VCE = parameter 25 20 OIP3 [dBm] 15 10 5 2V, 2.4GHz 3V, 2.4GHz 2V, 5.5GHz 3V, 5.5GHz 0 −5 0 5 10 15 20 25 I [mA] C Figure 9 3rd order intercept point OIP3 = f(IC), ZS = ZL= 50 Ω, VCE, f = parameters Datasheet 13 v2.0 2018-09-26 BFP720FESD SiGe:C NPN RF bipolar transistor Electrical characteristics 0.2 0.18 0.16 0.14 CCB[pF] 0.12 0.1 0.08 0.06 0.04 0.02 0 0 0.5 1 1.5 V 2 [V] 2.5 3 3.5 4 9 10 CB Figure 10 Collector base capacitance CCB = f(VCB), f = 1 MHz 50 45 40 35 Gms G [dB] 30 25 Gma 20 2 |S21| 15 10 5 0 Figure 11 Datasheet 0 1 2 3 4 5 6 f [GHz] 7 8 Gain Gma, Gms, IS21I2 = f(f), VCE = 3 V, IC = 15 mA 14 v2.0 2018-09-26 BFP720FESD SiGe:C NPN RF bipolar transistor Electrical characteristics Figure 12 Maximum power gain Gmax = f(IC), VCE = 3 V, f = parameter in GHz 42 39 0.15GHz 36 0.45GHz 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz 5.50GHz 33 30 G [dB] 27 24 21 18 10.00GHz 15 12 9 6 3 0 0 1 2 3 4 5 VCE [V] Figure 13 Datasheet Maximum power gain Gmax = f(VCE), IC = 15 mA, f = parameter in GHz 15 v2.0 2018-09-26 BFP720FESD SiGe:C NPN RF bipolar transistor 2 0.6 1 0.8 Electrical characteristics 0. 4 3 10 GHz 4 0.2 10 3 4 5 2 1 0.8 0.6 0.4 10 10 MHz 0 0.2 5 -10 -4 -5 2 -0. -3 4 Input reflection coefficient S11 = f(f), VCE = 3 V, IC = 5 / 15 mA 2 0.6 1 0.8 Figure 14 Ic = 5 mA Ic = 15 mA -1 Step 1 GHz -0.8 -0. 6 -2 . -0 0. 4 3 4 0.2 5 10 10 3 4 5 2 1 0.8 0.6 0.4 10 MHz 0 0.2 10 GHz -10 -4 -5 2 -0. -3 Figure 15 Datasheet -1 Step 1 GHz -0.8 -0. 6 -2 .4 -0 Ic = 5 mA Ic = 15 mA Output reflection coefficient S22 = f(f), VCE = 3 V, IC = 5 / 15 mA 16 v2.0 2018-09-26 BFP720FESD SiGe:C NPN RF bipolar transistor Electrical characteristics Figure 16 Source impedance for minimum noise figure ZS,opt = f(f), VCE = 3 V, IC = 5 / 15 mA 2 1.8 1.6 NFmin [dB] 1.4 1.2 1 0.8 0.6 IC = 15mA I = 5.0mA 0.4 C 0.2 0 0 2 4 6 8 10 f [GHz] Figure 17 Datasheet Noise figure NFmin = f(f), VCE = 3 V, ZS = ZS,opt, IC = 5 / 15 mA 17 v2.0 2018-09-26 BFP720FESD SiGe:C NPN RF bipolar transistor Electrical characteristics 3 2.8 2.6 f = 10GHz f = 5.5GHz f = 2.4GHz f = 0.45GHz 2.4 2.2 NFmin [dB] 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 5 10 15 20 25 Ic [mA] Figure 18 Noise figure NFmin = f(IC), VCE = 3 V, ZS = ZS,opt, f = parameter in GHz 3 2.8 2.6 f = 10GHz f = 5.5GHz f = 2.4GHz f = 0.45GHz 2.4 2.2 NF50 [dB] 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 5 10 15 20 25 Ic [mA] Figure 19 Note: Datasheet Noise figure NF50 = f(IC), VCE = 3 V, ZS = 50 Ω, f = parameter in GHz The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C. 18 v2.0 2018-09-26 BFP720FESD SiGe:C NPN RF bipolar transistor Package information TSFP-4-1 4 Package information TSFP-4-1 Figure 20 Package outline Figure 21 Foot print Figure 22 Marking layout example Figure 23 Tape dimensions Datasheet 19 v2.0 2018-09-26 BFP720FESD SiGe:C NPN RF bipolar transistor Revision history Revision history Document version Date of release Description of changes 2.0 2018-09-26 New datasheet layout. Datasheet 20 v2.0 2018-09-26 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2018-09-26 Published by Infineon Technologies AG 81726 Munich, Germany © 2018 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-pes1518081453226 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. 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