BSC009NE2LS5ATMA1

BSC009NE2LS5 MOSFET OptiMOSTM5Power-MOSFET,25V SuperSO8 8 Features •Optimizedforhighperformancebuckconverters •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Value Unit VDS 25 V RDS(on),max 0.9 mΩ ID 223 A QOSS 28 nC QG(0V..4.5V) 20 nC Type/OrderingCode Package BSC009NE2LS5 PG-TDSON-8 1) 5 6 2 Marking 09NE2LS5 3 6 5 4 1 Table1KeyPerformanceParameters Parameter 7 3 2 4 7 8 1 S1 8D S2 7D S3 6D G4 5D RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.1,2020-06-15 OptiMOSTM5Power-MOSFET,25V BSC009NE2LS5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 2 Rev.2.1,2020-06-15 OptiMOSTM5Power-MOSFET,25V BSC009NE2LS5 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 223 141 189 120 41 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W2) - 892 A TC=25°C - - 50 A TC=25°C EAS - - 90 mJ ID=50A,RGS=25Ω Gate source voltage VGS -16 - 16 V - Power dissipation Ptot - - 74 2.5 W TC=25°C TA=25°C,RthJA=50K/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse Continuous drain current1) Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - - 1.7 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area2) RthJA - - 50 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.1,2020-06-15 OptiMOSTM5Power-MOSFET,25V BSC009NE2LS5 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 1.6 2 V VDS=VGS,ID=250µA - 0.1 10 1 100 µA VDS=20V,VGS=0V,Tj=25°C VDS=20V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=16V,VDS=0V Drain-source on-state resistance RDS(on) - 0.95 0.75 1.25 0.9 mΩ VGS=4.5V,ID=30A VGS=10V,ID=30A Gate resistance RG - 1 1.7 Ω - Transconductance gfs 75 150 - S |VDS|>2|ID|RDS(on)max,ID=30A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 25 - Gate threshold voltage VGS(th) 1.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 2900 3900 pF VGS=0V,VDS=12V,f=1MHz Output capacitance1) Coss - 1400 1900 pF VGS=0V,VDS=12V,f=1MHz Reverse transfer capacitance Crss - 130 - pF VGS=0V,VDS=12V,f=1MHz Turn-on delay time td(on) - 4 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Rise time tr - 6 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Turn-off delay time td(off) - 30 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Fall time tf - 4 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 6.7 - nC VDD=12V,ID=30A,VGS=0to4.5V Gate charge at threshold Qg(th) - 4.6 - nC VDD=12V,ID=30A,VGS=0to4.5V Gate to drain charge Qgd - 4.9 - nC VDD=12V,ID=30A,VGS=0to4.5V Switching charge Qsw - 7.0 - nC VDD=12V,ID=30A,VGS=0to4.5V Gate charge total Qg - 20 28 nC VDD=12V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.3 - V VDD=12V,ID=30A,VGS=0to4.5V Gate charge total1) Qg - 43 57 nC VDD=12V,ID=30A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 18 - nC VDS=0.1V,VGS=0to4.5V Output charge Qoss - 28 - nC VDD=12V,VGS=0V 1) 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.1,2020-06-15 OptiMOSTM5Power-MOSFET,25V BSC009NE2LS5 Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 74 A TC=25°C - 892 A TC=25°C - 0.78 1 V VGS=0V,IF=30A,Tj=25°C - 20 - nC VR=15V,IF=IS,diF/dt=400A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery charge Qrr Final Data Sheet 5 Rev.2.1,2020-06-15 OptiMOSTM5Power-MOSFET,25V BSC009NE2LS5 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 80 240 70 200 60 160 ID[A] Ptot[W] 50 40 120 30 80 20 40 10 0 0 40 80 120 0 160 0 20 40 60 TC[°C] 80 100 120 140 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 100 µs 10 µs 2 10 100 1 ms 10 ms 101 0.5 0.2 ID[A] ZthJC[K/W] DC 100 0.1 0.05 10-1 0.02 0.01 single pulse 10 -2 10-1 10-2 10-1 100 101 102 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.1,2020-06-15 OptiMOSTM5Power-MOSFET,25V BSC009NE2LS5 Diagram5:Typ.outputcharacteristics 800 5V 10 V Diagram6:Typ.drain-sourceonresistance 1.6 4V 4.5 V 700 3.2 V 3.5 V 600 3.5 V 1.2 4V 4.5 V 5V RDS(on)[mΩ] ID[A] 500 3.2 V 400 3V 300 200 0.8 7V 8V 10 V 0.4 2.8 V 100 0 0 1 2 0.0 3 0 10 VDS[V] 20 30 40 50 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 1000 320 800 240 600 ID[A] gfs[S] 400 160 400 150 °C 25 °C 80 0 200 0 1 2 3 4 5 0 0 VGS[V] 200 300 400 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 100 gfs=f(ID);Tj=25°C 7 Rev.2.1,2020-06-15 OptiMOSTM5Power-MOSFET,25V BSC009NE2LS5 Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 3.0 2.5 2.5 2.0 250 µA 1.5 VGS(th)[V] RDS(on)[mΩ] 2.0 1.5 1.0 1.0 typ 0.5 0.5 0.0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=30A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=250µA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 150 °C 150 °C, max Ciss Coss 3 102 IF[A] C[pF] 10 Crss 102 101 101 0 5 10 15 20 25 100 0.0 VDS[V] 1.0 1.5 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.5 IF=f(VSD);parameter:Tj 8 Rev.2.1,2020-06-15 OptiMOSTM5Power-MOSFET,25V BSC009NE2LS5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 12 V 10 5V 25 °C 20 V 8 VGS[V] IAV[A] 100 °C 125 °C 101 6 4 2 100 100 101 102 103 tAV[µs] 0 0 10 20 30 40 50 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 28 27 26 VBR(DSS)[V] 25 24 23 22 21 20 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.1,2020-06-15 OptiMOSTM5Power-MOSFET,25V BSC009NE2LS5 5PackageOutlines   Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.1,2020-06-15 OptiMOSTM5Power-MOSFET,25V BSC009NE2LS5 Dimension in mm Figure2OutlineTape(TDSON-8) Final Data Sheet 11 Rev.2.1,2020-06-15 OptiMOSTM5Power-MOSFET,25V BSC009NE2LS5 RevisionHistory BSC009NE2LS5 Revision:2020-06-15,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2015-03-10 Release of final version 2.1 2020-06-15 Update current rating and footnotes Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2020InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 12 Rev.2.1,2020-06-15