BSC010N04LS6
MOSFET
OptiMOSTM6Power-Transistor,40V
TDSON-8FL(enlargedsourceinterconnection)
8
Features
•Optimizedforsynchronousapplication
•Verylowon-resistanceRDS(on)
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•175°Crated
1
2
7
6
5
5
3
6
4
4
3
2
Drain
Pin 5-8
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Gate
Pin 4
Table1KeyPerformanceParameters
Value
Unit
VDS
40
V
RDS(on),max
1
mΩ
ID
285
A
Qoss
73
nC
QG(0V..10V)
67
nC
QG(0V..4.5V)
32
nC
Package
BSC010N04LS6
PG-TDSON-8 FL
Final Data Sheet
*1
Source
Pin 1-3
*1: Internal body diode
Type/OrderingCode
1
8
1
Productvalidation
Parameter
7
Marking
RelatedLinks
10N04LS6
-
Rev.2.3,2022-07-21
OptiMOSTM6Power-Transistor,40V
BSC010N04LS6
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
2
Rev.2.3,2022-07-21
OptiMOSTM6Power-Transistor,40V
BSC010N04LS6
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Unit
Note/TestCondition
285
201
241
170
40
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
VGS=10V,TA=25°C,RthJA=50°C/W2)
-
1140
A
TA=25°C
-
-
376
mJ
ID=50A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
150
3.0
W
TC=25°C
TA=25°C,RthJA=50°C/W2)
Operating and storage temperature
Tj,Tstg
-55
-
175
°C
IEC climatic category; DIN IEC 68-1:
55/175/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche energy, single pulse
EAS
Gate source voltage
Continuous drain current1)
Pulsed drain current3)
4)
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Values
Min.
Typ.
Max.
RthJC
-
-
1
°C/W -
Thermal resistance, junction - case,
top
RthJC
-
-
20
°C/W -
Device on PCB,
6 cm² cooling area2)
RthJA
-
-
50
°C/W -
1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See Diagram 3 for more detailed information
4)
See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.2.3,2022-07-21
OptiMOSTM6Power-Transistor,40V
BSC010N04LS6
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
-
2.3
V
VDS=VGS,ID=250µA
-
0.1
10
1
100
µA
VDS=40V,VGS=0V,Tj=25°C
VDS=40V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
0.89
1.1
1.0
1.4
mΩ
VGS=10V,ID=50A
VGS=4.5V,ID=50A
Gate resistance
RG
-
1
-
Ω
-
Transconductance
gfs
-
250
-
S
|VDS|≥2|ID|RDS(on)max,ID=50A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
40
-
Gate threshold voltage
VGS(th)
1.3
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance1)
Values
Min.
Typ.
Max.
Ciss
-
4600
6000
pF
VGS=0V,VDS=20V,f=1MHz
Coss
-
1500
2000
pF
VGS=0V,VDS=20V,f=1MHz
Reverse transfer capacitance
Crss
-
38
66
pF
VGS=0V,VDS=20V,f=1MHz
Turn-on delay time
td(on)
-
7
-
ns
VDD=20V,VGS=10V,ID=20A,
RG,ext=1.6Ω
Rise time
tr
-
5.0
-
ns
VDD=20V,VGS=10V,ID=20A,
RG,ext=1.6Ω
Turn-off delay time
td(off)
-
29
-
ns
VDD=20V,VGS=10V,ID=20A,
RG,ext=1.6Ω
Fall time
tf
-
8
-
ns
VDD=20V,VGS=10V,ID=20A,
RG,ext=1.6Ω
Unit
Note/TestCondition
Output capacitance1)
1)
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Values
Min.
Typ.
Max.
Qgs
-
12
-
nC
VDD=20V,ID=50A,VGS=0to10V
Qg(th)
-
7.3
-
nC
VDD=20V,ID=50A,VGS=0to10V
Gate to drain charge
Qgd
-
8.1
12
nC
VDD=20V,ID=50A,VGS=0to10V
Switching charge
Qsw
-
13
-
nC
VDD=20V,ID=50A,VGS=0to10V
Gate charge total
Qg
-
67
83
nC
VDD=20V,ID=50A,VGS=0to10V
Gate plateau voltage
Vplateau
-
2.7
-
V
VDD=20V,ID=50A,VGS=0to10V
Gate charge total
Qg
-
32
-
nC
VDD=20V,ID=50A,VGS=0to4.5V
Gate charge total, sync. FET
Qg(sync)
-
28
-
nC
VDS=0.1V,VGS=0to4.5V
Qoss
-
73
97
nC
VDD=20V,VGS=0V
1)
1)
1)
Output charge
1)
2)
Defined by design. Not subject to production test.
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.3,2022-07-21
OptiMOSTM6Power-Transistor,40V
BSC010N04LS6
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Diode pulse current
Diode forward voltage
1)
Reverse recovery time
1)
Reverse recovery charge
1)
Values
Unit
Note/TestCondition
150
A
TC=25°C
-
1140
A
TC=25°C
-
0.80
1
V
VGS=0V,IF=50A,Tj=25°C
trr
-
30
60
ns
VR=20V,IF=10A,diF/dt=400A/µs
Qrr
-
97
194
nC
VR=20V,IF=10A,diF/dt=400A/µs
Min.
Typ.
Max.
IS
-
-
IS,pulse
-
VSD
Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.2.3,2022-07-21
OptiMOSTM6Power-Transistor,40V
BSC010N04LS6
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
160
350
140
300
120
250
200
ID[A]
Ptot[W]
100
80
150
60
100
40
50
20
0
0
25
50
75
100
125
150
175
0
200
0
25
50
75
TC[°C]
100
125
150
175
200
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
4
101
10
103
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
1 µs
10 µs
2
100
10
100 µs
ZthJC[K/W]
ID[A]
1 ms
101
10 ms
100
10-1
DC
10-1
10-2
10-1
100
101
102
10-2
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.3,2022-07-21
OptiMOSTM6Power-Transistor,40V
BSC010N04LS6
Diagram5:Typ.outputcharacteristics
400
Diagram6:Typ.drain-sourceonresistance
2.8
3.5 V
3V
4.5 V
350
10 V
2.4
4V
300
2.0
5V
200
3V
150
RDS(on)[mΩ]
ID[A]
250
3.5 V
1.6
4V
1.2
4.5 V
5V
10 V
0.8
100
2.8 V
0.4
50
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
3.0
0
25
50
75
VDS[V]
100
125
150
ID=f(VDS),Tj=25°C;parameter:VGS
RDS(on)=f(ID),Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.drain-sourceonresistance
400
200
2.8
350
2.4
300
2.0
RDS(on)[mΩ]
250
ID[A]
175
ID[A]
200
150
175 °C
1.6
1.2
25 °C
0.8
100
0.4
50
175 °C
0
25 °C
0
1
2
3
4
5
VGS[V]
0
2
4
6
8
10
VGS[V]
ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
0.0
RDS(on)=f(VGS),ID=50A;parameter:Tj
7
Rev.2.3,2022-07-21
OptiMOSTM6Power-Transistor,40V
BSC010N04LS6
Diagram9:Normalizeddrain-sourceonresistance
Diagram10:Typ.gatethresholdvoltage
2.0
2.4
2.0
1.6
1.2
VGS(th)[V]
RDS(on)(normalizedto25°C)
1.6
0.8
1.2
2500 µA
0.8
0.4
250 µA
0.4
0.0
-80
-40
0
40
80
120
160
0.0
-80
200
-40
0
40
Tj[°C]
80
120
160
200
Tj[°C]
RDS(on)=f(Tj),ID=50A,VGS=10V
VGS(th=f(Tj),VGS=VDS;parameter:ID
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
104
10
25 °C
25 °C, max
175 °C
175 °C, max
Ciss
103
103
IF[A]
C[pF]
Coss
102
102
Crss
101
0
5
10
15
20
25
30
35
40
101
0.00
0.25
VDS[V]
0.75
1.00
1.25
1.50
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.50
IF=f(VSD);parameter:Tj
8
Rev.2.3,2022-07-21
OptiMOSTM6Power-Transistor,40V
BSC010N04LS6
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
2
10
10
8V
20 V
32 V
8
25 °C
101
100 °C
VGS[V]
IAV[A]
6
4
2
150 °C
100
100
101
102
103
tAV[µs]
0
0
10
20
30
40
50
60
70
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj,start
VGS=f(Qgate),ID=50Apulsed,Tj=25°C;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Diagram Gate charge waveforms
44
43
VBR(DSS)[V]
42
41
40
39
38
-80
-40
0
40
80
120
160
200
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.3,2022-07-21
OptiMOSTM6Power-Transistor,40V
BSC010N04LS6
5PackageOutlines
Figure1OutlinePG-TDSON-8FL,dimensionsinmm/inches
Final Data Sheet
10
Rev.2.3,2022-07-21
OptiMOSTM6Power-Transistor,40V
BSC010N04LS6
2.205
0.5
4×
2.205
1.905
0.05
1.905
0.95
4×
1.27
3×
1.27
3×
0.8
4×
0.8
0.4
4×
1.42
2×
2.875
0.18
2×
3×
0.4
2.875
3×
0.8
0.4
3×
0.9
2×
0.35
2.525
3×
3.1
3×
1.815
1.1
1.27
2×
1.055
0.55
3×
3.325
2.798
2.27
1.13
1.4
3.325
1.7
0.4
3×
Pin1
0.15
0.5
4×
1.27
2×
1.905
1.905
1.905
1.905
3.19
copper
solder mask
stencil apertures
All dimensions are in units mm
Figure2OutlineBoardpads(PG-TDSON-8-FL),dimensionsinmm
Final Data Sheet
11
Rev.2.3,2022-07-21
OptiMOSTM6Power-Transistor,40V
BSC010N04LS6
RevisionHistory
BSC010N04LS6
Revision:2022-07-21,Rev.2.3
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2018-07-31
Release of final version
2.1
2019-04-02
Update Marking
2.2
2020-03-16
Update current rating
2.3
2022-07-21
Update "Boardpads" drawing, footnotes and add max values
Trademarks
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InfineonTechnologiesAG
81726München,Germany
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Final Data Sheet
12
Rev.2.3,2022-07-21