BSC016N04LSG
MOSFET
OptiMOS™3Power-Transistor,40V
SuperSO8
8
Features
•FastswitchingMOSFETforSMPS
•OptimizedtechnologyforDC/DCconverters
•QualifiedaccordingtoJEDEC1)fortargetapplications
•N-channel
•Logiclevel
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•Superiorthermalresistance
•100%Avalanchetested
•Pb-freeplating;RoHScompliant;
•Halogen-freeaccordingtoIEC61249-2-21
Value
Unit
VDS
40
V
RDS(on),max
1.6
mΩ
ID
100
A
Type/OrderingCode
Package
BSC016N04LS G
PG-TDSON-8
1)
5
6
2
Marking
016N04LS
3
6
5
4
1
Table1KeyPerformanceParameters
Parameter
7
3
2
4
7
8
1
S1
8D
S2
7D
S3
6D
G4
5D
RelatedLinks
-
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.1,2020-02-07
OptiMOS™3Power-Transistor,40V
BSC016N04LSG
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.2.1,2020-02-07
OptiMOS™3Power-Transistor,40V
BSC016N04LSG
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Unit
Note/TestCondition
100
100
100
100
31
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
VGS=10V,TA=25°C,RthJA=50K/W1)
-
400
A
TC=25°C
-
-
50
A
TC=25°C
EAS
-
-
295
mJ
ID=50A,RGS=25Ω
Gate source voltage
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
139
2.5
W
TC=25°C
TA=25°C,RthJA=50K/W1)
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche current, single pulse
IAS
Avalanche energy, single pulse
Continuous drain current
Pulsed drain current2)
3)
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Device on PCB,
6 cm2 cooling area1)
Values
Min.
Typ.
Max.
RthJC
-
-
0.9
K/W
-
RthJA
-
-
50
K/W
-
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
Final Data Sheet
3
Rev.2.1,2020-02-07
OptiMOS™3Power-Transistor,40V
BSC016N04LSG
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
-
2
V
VDS=VGS,ID=85µA
-
0.1
10
1
100
µA
VDS=40V,VGS=0V,Tj=25°C
VDS=40V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
1.8
1.3
2.3
1.6
mΩ
VGS=4.5V,ID=50A
VGS=10V,ID=50A
Gate resistance
RG
-
1.5
-
Ω
-
Transconductance
gfs
95
190
-
S
|VDS|>2|ID|RDS(on)max,ID=50A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
40
-
Gate threshold voltage
VGS(th)
1.2
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance1)
Values
Min.
Typ.
Max.
Ciss
-
8900
12000 pF
VGS=0V,VDS=20V,f=1MHz
Output capacitance1)
Coss
-
1800
2400
pF
VGS=0V,VDS=20V,f=1MHz
Reverse transfer capacitance
Crss
-
100
-
pF
VGS=0V,VDS=20V,f=1MHz
Turn-on delay time
td(on)
-
14
-
ns
VDD=20V,VGS=10V,ID=30A,
RG=1.6Ω
Rise time
tr
-
7.6
-
ns
VDD=20V,VGS=10V,ID=30A,
RG=1.6Ω
Turn-off delay time
td(off)
-
56
-
ns
VDD=20V,VGS=10V,ID=30A,
RG=1.6Ω
Fall time
tf
-
9.4
-
ns
VDD=20V,VGS=10V,ID=30A,
RG=1.6Ω
Unit
Note/TestCondition
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
25
-
nC
VDD=20V,ID=30A,VGS=0to10V
Gate charge at threshold
Qg(th)
-
14
-
nC
VDD=20V,ID=30A,VGS=0to10V
Gate to drain charge
Qgd
-
11
-
nC
VDD=20V,ID=30A,VGS=0to10V
Switching charge
Qsw
-
23
-
nC
VDD=20V,ID=30A,VGS=0to10V
Gate charge total
Qg
-
113
150
nC
VDD=20V,ID=30A,VGS=0to10V
Gate plateau voltage
Vplateau
-
2.9
-
V
VDD=20V,ID=30A,VGS=0to10V
Gate charge total
Qg
-
54
-
nC
VDD=20V,ID=30A,VGS=0to4.5V
Gate charge total, sync. FET
Qg(sync)
-
106
-
nC
VDS=0.1V,VGS=0to10V
Output charge
Qoss
-
69
-
nC
VDD=20V,VGS=0V
1)
1)
2)
Defined by design. Not subject to production test
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.1,2020-02-07
OptiMOS™3Power-Transistor,40V
BSC016N04LSG
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Values
Unit
Note/TestCondition
100
A
TC=25°C
-
400
A
TC=25°C
-
0.8
1.2
V
VGS=0V,IF=50A,Tj=25°C
-
125
-
nC
VR=20V,IF=IS,diF/dt=400A/µs
Min.
Typ.
Max.
IS
-
-
Diode pulse current
IS,pulse
-
Diode forward voltage
VSD
Reverse recovery charge
Qrr
Final Data Sheet
5
Rev.2.1,2020-02-07
OptiMOS™3Power-Transistor,40V
BSC016N04LSG
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
160
120
140
100
120
80
ID[A]
Ptot[W]
100
80
60
60
40
40
20
20
0
0
40
80
120
0
160
0
40
80
TC[°C]
120
160
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
10 µs
1 µs
100 µs
1 ms
102
10 ms
100
ZthJC[K/W]
ID[A]
DC
1
10
0.5
0.2
0.1
10-1
0.05
100
0.02
0.01
-1
10
10-1
100
101
102
10
single pulse
-2
10-6
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.1,2020-02-07
OptiMOS™3Power-Transistor,40V
BSC016N04LSG
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
600
3.5
5V
4.5 V
10 V
3.0
500
3.5 V
2.5
RDS(on)[mΩ]
400
ID[A]
4V
300
4V
2.0
4.5 V
5V
1.5
10 V
200
1.0
3.5 V
100
0.5
3.2 V
3V
0
2.8 V
0
1
2
0.0
3
0
10
20
VDS[V]
30
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
300
300
250
250
200
200
gfs[S]
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
150
100
50
50
150 °C
0
1
2
25 °C
3
4
5
0
0
VGS[V]
40
80
120
160
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
50
150
100
0
40
ID[A]
gfs=f(ID);Tj=25°C
7
Rev.2.1,2020-02-07
OptiMOS™3Power-Transistor,40V
BSC016N04LSG
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
3.0
2.5
2.5
2.0
1.5
98 %
1.5
VGS(th)[V]
RDS(on)[mΩ]
2.0
typ
1.0
1.0
0.5
0.5
0.0
-60
-20
20
60
100
140
0.0
-60
180
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=50A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;ID=85µA
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
5
103
10
25 °C
150 °C
25 °C, 98%
150 °C, 98%
104
Ciss
Coss
IF[A]
C[pF]
102
3
10
101
Crss
102
101
0
10
20
30
40
100
0.0
0.5
VDS[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
1.0
1.5
2.0
VSD[V]
IF=f(VSD);parameter:Tj
8
Rev.2.1,2020-02-07
OptiMOS™3Power-Transistor,40V
BSC016N04LSG
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
2
10
12
20 V
10
8V
100 °C
8
VGS[V]
IAV[A]
125 °C
32 V
25 °C
101
6
4
2
100
100
101
102
103
tAV[µs]
0
0
40
80
120
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=30Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Diagram Gate charge waveforms
45
40
VBR(DSS)[V]
35
30
25
20
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.1,2020-02-07
OptiMOS™3Power-Transistor,40V
BSC016N04LSG
5PackageOutlines
DOCUMENT NO.
Z8B00003332
REVISION
07
DIMENSION
A
A1
b
D
D1
D2
E
E1
E2
e
L
M
MILLIMETERS
MIN.
MAX.
0.90
1.20
0.15
0.35
0.34
0.54
4.80
5.35
3.90
4.40
0.03
0.23
5.70
6.10
5.90
6.42
3.88
4.31
1.27
0.45
0.71
0.45
0.69
SCALE 10:1
0
1
2
3mm
EUROPEAN PROJECTION
ISSUE DATE
06.06.2019
Figure1OutlinePG-TDSON-8,dimensionsinmm
Final Data Sheet
10
Rev.2.1,2020-02-07
OptiMOS™3Power-Transistor,40V
BSC016N04LSG
PG-TDSON-8: RecommenGHd BoDrdpads & Apertures
1.905
1.905
1.27
3x
0.6
1.27
3x
copper
Figure 2
Final Data Sheet
1.6
0.2
1.27
3x
0.825
2.863
0.5
0.925
2.863
1.27
3x
1.905
0.875
1.5
0.75
0.2
2.9
4.455
3.325
0.8
0.5
1.5
0.4
1.905
stencil apertures
solder mask
all dimensions in mm
Outline Boardpads (TDSON-8), dimensions in mm
11
Rev.2.1,2020-02-07
OptiMOS™ 3 Power-Transistor , 40 V
BSC016N04LS G
Dimension in mm
Figure 3
Final Data Sheet
Outline Tape (TDSON-8)
12
Rev. 2.1, 2020-02-07
OptiMOS™ 3 Power-Transistor , 40 V
BSC016N04LS G
Revision History
BSC016N04LS G
Revision: 2020-02-07, Rev. 2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.1
2020-02-07
Update package drawings and footnotes
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously
improve the quality of this document. Please send your proposal (including a reference to this document) to:
erratum@infineon.com
Published by
Infineon Technologies AG
81726 München, Germany
© 2020 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the
product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation
warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the
product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s
technical departments to evaluate the suitability of the product for the intended application and the completeness of the product
information given in this document with respect to such application.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or
automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a
failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and
aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Final Data Sheet
13
Rev. 2.1, 2020-02-07