BSC019N04NSGATMA1

BSC019N04NSG MOSFET OptiMOSª3Power-Transistor,40V SuperSO8 8 Features •FastswitchingMOSFETforSMPS •OptimizedtechnologyforDC/DCconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel;Normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%Avalanchetested •Pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 7 5 6 4 1 2 Table1KeyPerformanceParameters 3 6 5 3 2 4 7 8 1 S1 8D S2 7D Parameter Value Unit S3 6D VDS 40 V G4 5D RDS(on),max 1.9 mΩ ID 204 A Type/OrderingCode Package BSC019N04NS G PG-TDSON-8 1) Marking 019N04NS RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.1,2020-03-17 OptiMOSª3Power-Transistor,40V BSC019N04NSG TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 2 Rev.2.1,2020-03-17 OptiMOSª3Power-Transistor,40V BSC019N04NSG 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 204 129 29 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W2) - 816 A TC=25°C - - 50 A TC=25°C EAS - - 295 mJ ID=50A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 125 2.5 W TC=25°C TA=25°C,RthJA=50K/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current3) ID,pulse - Avalanche current, single pulse4) IAS Avalanche energy, single pulse 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - - 1 K/W - Thermal resistance, junction - case, top RthJC - - 18 K/W - Device on PCB, 6 cm2 cooling area2) RthJA - - 50 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.1,2020-03-17 OptiMOSª3Power-Transistor,40V BSC019N04NSG 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA - 4 V VDS=VGS,ID=85µA - 0.1 10 1 100 µA VDS=40V,VGS=0V,Tj=25°C VDS=40V,VGS=0V,Tj=125°C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.6 1.9 mΩ VGS=10V,ID=50A Gate resistance RG - 1.3 - Ω - Transconductance gfs 60 120 - S |VDS|>2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 40 - Gate threshold voltage VGS(th) 2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 6600 8800 pF VGS=0V,VDS=20V,f=1MHz Output capacitance Coss - 1800 2400 pF VGS=0V,VDS=20V,f=1MHz Reverse transfer capacitance Crss - 70 - pF VGS=0V,VDS=20V,f=1MHz Turn-on delay time td(on) - 22 - ns VDD=20V,VGS=10V,ID=30A, RG=1.6Ω Rise time tr - 5.6 - ns VDD=20V,VGS=10V,ID=30A, RG=1.6Ω Turn-off delay time td(off) - 33 - ns VDD=20V,VGS=10V,ID=30A, RG=1.6Ω Fall time tf - 6.6 - ns VDD=20V,VGS=10V,ID=30A, RG=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 32 - nC VDD=20V,ID=30A,VGS=0to10V Gate charge at threshold Qg(th) - 20 - nC VDD=20V,ID=30A,VGS=0to10V Gate to drain charge Qgd - 10 - nC VDD=20V,ID=30A,VGS=0to10V Switching charge Qsw - 22 - nC VDD=20V,ID=30A,VGS=0to10V Gate charge total Qg - 81 108 nC VDD=20V,ID=30A,VGS=0to10V Gate plateau voltage Vplateau - 4.9 - V VDD=20V,ID=30A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 77 - nC VDS=0.1V,VGS=0to10V Output charge Qoss - 66 - nC VDD=20V,VGS=0V 1) See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.1,2020-03-17 OptiMOSª3Power-Transistor,40V BSC019N04NSG Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 100 A TC=25°C - 816 A TC=25°C - 0.85 1.2 V VGS=0V,IF=50A,Tj=25°C - 100 - nC VR=20V,IF=IS,diF/dt=400A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery charge Qrr Final Data Sheet 5 Rev.2.1,2020-03-17 OptiMOSª3Power-Transistor,40V BSC019N04NSG 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 140 240 120 200 100 80 ID[A] Ptot[W] 160 120 60 80 40 40 20 0 0 40 80 120 0 160 0 20 40 60 TC[°C] 80 100 120 140 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 10 µs 102 100 µs DC 100 1 ms 0.5 ZthJC[K/W] ID[A] 101 10 ms 100 0.2 10-1 0.1 0.05 10-1 0.02 0.01 10-2 10-1 100 101 102 10-2 10-6 single pulse 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.1,2020-03-17 OptiMOSª3Power-Transistor,40V BSC019N04NSG Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 400 6 10 V 5V 7V 6.5 V 5 300 RDS(on)[mΩ] ID[A] 4 6V 200 5.5 V 3 6V 6.5 V 7V 2 5.5 V 10 V 100 1 5V 0 0 1 2 0 3 0 10 20 VDS[V] 30 40 50 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 250 200 300 gfs[S] ID[A] 150 200 100 150 °C 100 50 25 °C 0 2 3 4 5 6 7 8 0 0 VGS[V] 80 120 160 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 7 Rev.2.1,2020-03-17 OptiMOSª3Power-Transistor,40V BSC019N04NSG Diagram10:Typ.gatethresholdvoltage 3.5 4.5 3.0 4.0 2.5 3.5 98 % 2.0 VGS(th)[V] RDS(on)[mΩ] Diagram9:Drain-sourceon-stateresistance typ 1.5 3.0 2.5 1.0 2.0 0.5 1.5 0.0 -60 -20 20 60 100 140 1.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=50A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=85µA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 150 °C 150 °C, max Ciss Coss 102 IF[A] C[pF] 103 102 101 101 Crss 0 10 20 30 40 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.1,2020-03-17 OptiMOSª3Power-Transistor,40V BSC019N04NSG Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 20 V 10 25 °C 8V 100 °C 32 V 8 VGS[V] IAV[A] 125 °C 101 6 4 2 100 100 101 102 103 tAV[µs] 0 0 20 40 60 80 100 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 45 40 VBR(DSS)[V] 35 30 25 20 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.1,2020-03-17 OptiMOSª3Power-Transistor,40V BSC019N04NSG 5PackageOutlines   Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.1,2020-03-17 OptiMOSª3Power-Transistor,40V BSC019N04NSG Dimension in mm Figure2OutlineTape(TDSON-8) Final Data Sheet 11 Rev.2.1,2020-03-17 OptiMOSª3Power-Transistor,40V BSC019N04NSG RevisionHistory BSC019N04NS G Revision:2020-03-17,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2018-04-09 Release of final version 2.1 2020-03-17 Update current rating Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 12 Rev.2.1,2020-03-17