BSC022N04LS

BSC022N04LS MOSFET OptiMOSTMPower-MOSFET,40V SuperSO8 8 Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Value Unit VDS 40 V RDS(on),max 2.2 mΩ ID 100 A QOSS 33 nC QG(0V..10V) 37 nC Type/OrderingCode Package BSC022N04LS PG-TDSON-8 1) 5 6 2 Marking 022N04LS 3 6 5 4 1 Table1KeyPerformanceParameters Parameter 7 3 2 4 7 8 1 S1 8D S2 7D S3 6D G4 5D RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.1,2016-05-25 OptiMOSTMPower-MOSFET,40V BSC022N04LS TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.1,2016-05-25 OptiMOSTMPower-MOSFET,40V BSC022N04LS 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 100 85 100 70 25 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W1) Min. Typ. Max. - Continuous drain current ID - Pulsed drain current2) ID,pulse - - 400 A TC=25°C Avalanche current, single pulse IAS - - 50 A TC=25°C Avalanche energy, single pulse3) EAS - - 70 mJ ID=50A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 69 2.5 W TC=25°C TA=25°C,RthJA=50K/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - 1.1 1.8 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area1) RthJA - - 50 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.1,2016-05-25 OptiMOSTMPower-MOSFET,40V BSC022N04LS 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA - 2 V VDS=VGS,ID=250µA - 0.1 10 1 100 µA VDS=40V,VGS=0V,Tj=25°C VDS=40V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 2.3 1.8 3.2 2.2 mΩ VGS=4.5V,ID=50A VGS=10V,ID=50A Gate resistance1) RG - 1.1 2.2 Ω - Transconductance gfs 90 180 - S |VDS|>2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 40 - Gate threshold voltage VGS(th) 1.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Values Min. Typ. Max. Ciss - 2600 3640 pF VGS=0V,VDS=20V,f=1MHz Coss - 750 1050 pF VGS=0V,VDS=20V,f=1MHz Reverse transfer capacitance Crss - 60 120 pF VGS=0V,VDS=20V,f=1MHz Turn-on delay time td(on) - 6.1 - ns VDD=20V,VGS=10V,ID=50A, RG,ext=1.6Ω Rise time tr - 6.8 - ns VDD=20V,VGS=10V,ID=50A, RG,ext=1.6Ω Turn-off delay time td(off) - 26 - ns VDD=20V,VGS=10V,ID=50A, RG,ext=1.6Ω Fall time tf - 5.0 - ns VDD=20V,VGS=10V,ID=50A, RG,ext=1.6Ω Unit Note/TestCondition Input capacitance1) 1) Output capacitance 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 6.8 - nC VDD=20V,ID=50A,VGS=0to10V Qg(th) - 4.2 - nC VDD=20V,ID=50A,VGS=0to10V Gate to drain charge Qgd - 6.0 8.4 nC VDD=20V,ID=50A,VGS=0to10V Switching charge Qsw - 8.7 - nC VDD=20V,ID=50A,VGS=0to10V Gate charge total Qg - 37 52 nC VDD=20V,ID=50A,VGS=0to10V Gate plateau voltage Vplateau - 2.6 - V VDD=20V,ID=50A,VGS=0to10V Gate charge total Qg - 19 27 nC VDD=20V,ID=50A,VGS=0to4.5V Gate charge total, sync. FET Qg(sync) - 15 - nC VDS=0.1V,VGS=0to4.5V Qoss - 33 46 nC VDD=20V,VGS=0V 1) 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.1,2016-05-25 OptiMOSTMPower-MOSFET,40V BSC022N04LS Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Values Unit Note/TestCondition 69 A TC=25°C - 400 A TC=25°C - 0.85 1 V VGS=0V,IF=50A,Tj=25°C trr - 20 40 ns VR=20V,IF=50A,diF/dt=400A/µs Qrr - 36 - nC VR=20V,IF=50A,diF/dt=400A/µs Min. Typ. Max. IS - - IS,pulse - VSD Reverse recovery time Reverse recovery charge Diode forward voltage 1) 1) Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.1,2016-05-25 OptiMOSTMPower-MOSFET,40V BSC022N04LS 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 80 120 70 100 60 80 ID[A] Ptot[W] 50 40 60 30 40 20 20 10 0 0 40 80 120 0 160 0 40 80 TC[°C] 120 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 10 µs 102 1 µs 100 100 µs 0.5 ZthJC[K/W] ID[A] 0.2 1 ms 101 10 ms DC 0.1 0.05 10-1 0.02 0.01 single pulse 0 10 10-1 10-1 10 100 101 102 -2 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.1,2016-05-25 OptiMOSTMPower-MOSFET,40V BSC022N04LS Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 400 5 10 V 350 2.8 V 4.5 V 5V 3V 3.2 V 4 4V 300 3.5 V 3.5 V RDS(on)[mΩ] ID[A] 250 200 3.2 V 150 3 4V 4.5 V 5V 2 10 V 3V 100 2.8 V 1 50 0 0 1 0 2 0 50 100 150 VDS[V] 200 250 300 350 400 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 250 320 200 240 150 ID[A] gfs[S] 400 160 100 80 50 150 °C 0 0 1 25 °C 2 3 4 5 0 0 VGS[V] 40 60 80 100 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 7 Rev.2.1,2016-05-25 OptiMOSTMPower-MOSFET,40V BSC022N04LS Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 4 2.0 3 1.5 VGS(th)[V] 2.5 RDS(on)[mΩ] 5 max 2 typ 1 250 µA 1.0 0.5 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=50A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=250µA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 150 °C 25°C,max 150°C,max Ciss Coss 102 Crss 102 IF[A] C[pF] 103 101 0 10 20 101 30 40 100 0.0 VDS[V] 1.0 1.5 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.5 IF=f(VSD);parameter:Tj 8 Rev.2.1,2016-05-25 OptiMOSTMPower-MOSFET,40V BSC022N04LS Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 20 V 10 8V 32 V 8 25 °C VGS[V] IAV[A] 100 °C 101 125 °C 6 4 2 100 100 101 102 103 0 0 tAV[µs] 10 20 30 40 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=50Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 46 44 42 VBR(DSS)[V] 40 38 36 34 32 30 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.1,2016-05-25 OptiMOSTMPower-MOSFET,40V BSC022N04LS 5PackageOutlines   Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.1,2016-05-25 OptiMOSTMPower-MOSFET,40V BSC022N04LS Dimension in mm Figure2OutlineTape(TDSON-8) Final Data Sheet 11 Rev.2.1,2016-05-25 OptiMOSTMPower-MOSFET,40V BSC022N04LS   Figure3OutlineFootprint(TDSON-8) Final Data Sheet 12 Rev.2.1,2016-05-25 OptiMOSTMPower-MOSFET,40V BSC022N04LS RevisionHistory BSC022N04LS Revision:2016-05-25,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2016-05-25 Update footnotes and insert max values TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 13 Rev.2.1,2016-05-25