BSC027N10NS5

BSC027N10NS5 MOSFET OptiMOSTMPower-Transistor,100V TSON-8-3 8 7 Features 5 6 6 5 •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •175°Crated ProductValidation: Qualifiedforindustrialapplicationsaccordingtotherelevanttestsof JEDEC47/20/22 Table1KeyPerformanceParameters 7 8 Pin 1 2 4 3 3 4 2 1 S1 8D S2 7D Parameter Value Unit S3 6D VDS 100 V G4 5D RDS(on),max 2.7 mΩ ID 100 A Qoss 114 nC QG(0V..10V) 89 nC Type/OrderingCode Package Marking RelatedLinks BSC027N10NS5 TSON-8-3 027N10N - Final Data Sheet 1 Rev.2.0,2018-02-28 OptiMOSTMPower-Transistor,100V BSC027N10NS5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.0,2018-02-28 OptiMOSTMPower-Transistor,100V BSC027N10NS5 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 100 100 23 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W1) - 400 A TC=25°C - - 641 mJ ID=50A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 214 3.0 W TC=25°C TA=25°C,RthJA=50K/W2) Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse3) EAS Gate source voltage 2Thermalcharacteristics atTj=25°C,unlessotherwisespecified Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - 0.4 0.7 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area1) RthJA - - 50 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.0,2018-02-28 OptiMOSTMPower-Transistor,100V BSC027N10NS5 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.0 3.8 V VDS=VGS,ID=146µA - 0.1 10 5 100 µA VDS=100V,VGS=0V,Tj=25°C VDS=100V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 2.1 2.6 2.7 3.4 mΩ VGS=10V,ID=50A VGS=6V,ID=25A Gate resistance1) RG - 1.7 2.5 Ω - Transconductance gfs 75 150 - S |VDS|>2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 100 - Gate threshold voltage VGS(th) 2.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 6300 8200 pF VGS=0V,VDS=50V,f=1MHz Coss - 970 1300 pF VGS=0V,VDS=50V,f=1MHz Reverse transfer capacitance Crss - 43 75 pF VGS=0V,VDS=50V,f=1MHz Turn-on delay time td(on) - 13 - ns VDD=50V,VGS=10V,ID=50A, RG,ext=3Ω Rise time tr - 14 - ns VDD=50V,VGS=10V,ID=50A, RG,ext=3Ω Turn-off delay time td(off) - 41 - ns VDD=50V,VGS=10V,ID=50A, RG,ext=3Ω Fall time tf - 18 - ns VDD=50V,VGS=10V,ID=50A, RG,ext=3Ω Unit Note/TestCondition Output capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 28 - nC VDD=50V,ID=50A,VGS=0to10V Qg(th) - 19 - nC VDD=50V,ID=50A,VGS=0to10V Gate to drain charge Qgd - 18 27 nC VDD=50V,ID=50A,VGS=0to10V Switching charge Qsw - 27 - nC VDD=50V,ID=50A,VGS=0to10V Gate charge total Qg - 89 111 nC VDD=50V,ID=50A,VGS=0to10V Gate plateau voltage Vplateau - 4.4 - V VDD=50V,ID=50A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 77 - nC VDS=0.1V,VGS=0to10V Qoss - 114 152 nC VDD=50V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2018-02-28 OptiMOSTMPower-Transistor,100V BSC027N10NS5 Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 100 A TC=25°C - 400 A TC=25°C - 0.83 1.1 V VGS=0V,IF=50A,Tj=25°C trr - 56 112 ns VR=50V,IF=50A,diF/dt=100A/µs Qrr - 89 178 nC VR=50V,IF=50A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.0,2018-02-28 OptiMOSTMPower-Transistor,100V BSC027N10NS5 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 240 120 220 200 100 180 160 80 ID[A] Ptot[W] 140 120 60 100 80 40 60 40 20 20 0 0 25 50 75 100 125 150 175 0 200 0 25 50 75 TC[°C] 100 125 150 175 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 10 µs 102 100 100 µs 0.5 ZthJC[K/W] ID[A] 1 ms 10 ms 101 DC 0.2 10-1 0.1 0.05 0.02 0 10 10 -2 0.01 single pulse 10-1 10-1 100 101 102 103 10-3 10-6 10-5 VDS[V] 10-3 10-2 10-1 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-4 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.0,2018-02-28 OptiMOSTMPower-Transistor,100V BSC027N10NS5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 400 5 7V 5V 6V 10 V 360 320 5.5 V 4 5.5 V 280 RDS(on)[mΩ] ID[A] 240 200 160 5V 3 6V 7V 10 V 2 120 80 1 40 0 0.0 0.5 1.0 1.5 2.0 2.5 0 3.0 0 50 100 150 VDS[V] 200 250 300 350 400 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 300 360 250 320 280 200 gfs[S] ID[A] 240 200 150 160 100 120 80 50 175 °C 25 °C 40 0 0 2 4 6 8 0 0 VGS[V] 80 120 160 200 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 7 Rev.2.0,2018-02-28 OptiMOSTMPower-Transistor,100V BSC027N10NS5 Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 7 4 6 1460 µA 3 5 146 µA max VGS(th)[V] RDS(on)[mΩ] 4 3 2 typ 2 1 1 0 -60 -20 20 60 100 140 0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=50A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 175 °C 175 °C, max Ciss Coss 102 IF[A] C[pF] 103 102 101 Crss 101 0 20 40 60 80 100 100 0.0 VDS[V] 1.0 1.5 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.5 IF=f(VSD);parameter:Tj 8 Rev.2.0,2018-02-28 OptiMOSTMPower-Transistor,100V BSC027N10NS5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 9 25 °C 50 V 20 V 8 80 V 7 101 150 °C 6 VGS[V] IAV[A] 100 °C 5 4 0 10 3 2 1 10-1 100 101 102 103 tAV[µs] 0 0 20 40 60 80 100 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=50Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 110 108 106 VBR(DSS)[V] 104 102 100 98 96 94 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.0,2018-02-28 OptiMOSTMPower-Transistor,100V BSC027N10NS5 5PackageOutlines DIMENSION A b b1 c D D1 E E1 E2 E3 e K2 L L1 L2 DOCUMENT NO. Z8B00187559 MILLIMETERS MIN. MAX. 0.34 - 1.10 0.54 0.05 REVISION 01 SCALE 0.20 4.90 4.25 5.90 4.00 3.14 0.20 0 5.10 4.45 6.10 4.20 3.34 0.40 10:1 1 2mm EUROPEAN PROJECTION 1.27 (0.37) 0.60 0.43 0.80 0.63 ISSUE DATE 14.12.2017 (0.25) Figure1OutlineTSON-8-3,dimensionsinmm/inches Final Data Sheet 10 Rev.2.0,2018-02-28 OptiMOSTMPower-Transistor,100V BSC027N10NS5 RevisionHistory BSC027N10NS5 Revision:2018-02-28,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2018-02-28 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.0,2018-02-28