BSC028N06NSSCATMA1

BSC028N06NS MOSFET OptiMOSTMPower-Transistor,60V SuperSO8 8 Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 7 5 6 4 1 2 3 6 5 3 2 4 7 8 1 Table1KeyPerformanceParameters Parameter Value Unit S1 8D VDS 60 V S2 7D RDS(on),max 2.8 mΩ S3 6D ID 132 A G4 5D Qoss 43 nC QG(0..10V) 37 nC Type/OrderingCode Package BSC028N06NS PG-TDSON-8 1) Marking 028N06NS RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.5,2020-09-21 OptiMOSTMPower-Transistor,60V BSC028N06NS TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.5,2020-09-21 OptiMOSTMPower-Transistor,60V BSC028N06NS 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 132 83 23 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W2) - 528 A TC=25°C - - 100 mJ ID=50A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 83 2.5 W TC=25°C TA=25°C,RthJA=50K/W3) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current3) ID,pulse - Avalanche energy, single pulse4) EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - 0.9 1.5 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area2) RthJA - - 50 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.5,2020-09-21 OptiMOSTMPower-Transistor,60V BSC028N06NS 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 2.8 3.3 V VDS=VGS,ID=50µA - 0.5 10 1 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 2.5 3.4 2.8 4.2 mΩ VGS=10V,ID=50A VGS=6V,ID=12.5A Gate resistance1) RG - 1.3 1.95 Ω - Transconductance gfs 50 100 - S |VDS|>2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 60 - Gate threshold voltage VGS(th) 2.1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss 2025 2700 3375 pF VGS=0V,VDS=30V,f=1MHz Coss 495 660 825 pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss 8.5 28 56 pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 11 22 ns VDD=30V,VGS=10V,ID=50A, RG,ext=3Ω Rise time tr - 38 57 ns VDD=30V,VGS=10V,ID=50A, RG,ext=3Ω Turn-off delay time td(off) - 19 38 ns VDD=30V,VGS=10V,ID=50A, RG,ext=3Ω Fall time tf - 8 16 ns VDD=30V,VGS=10V,ID=50A, RG,ext=3Ω Unit Note/TestCondition Output capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs 9 12 16.5 nC VDD=30V,ID=50A,VGS=0to10V Gate charge at threshold Qg(th) 6 8 11 nC VDD=30V,ID=50A,VGS=0to10V Gate to drain charge Qgd 5 7 10.3 nC VDD=30V,ID=50A,VGS=0to10V Switching charge Qsw 8 12 17 nC VDD=30V,ID=50A,VGS=0to10V Gate charge total Qg 31 37 49 nC VDD=30V,ID=50A,VGS=0to10V Gate plateau voltage Vplateau 4.0 4.6 5.2 V VDD=30V,ID=50A,VGS=0to10V Gate charge total, sync. FET Qg(sync) 27 33 43 nC VDS=0.1V,VGS=0to10V Output charge Qoss 32 43 54 nC VDD=30V,VGS=0V 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition. Defined by design, not subject to production test Final Data Sheet 4 Rev.2.5,2020-09-21 OptiMOSTMPower-Transistor,60V BSC028N06NS Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 100 A TC=25°C - 528 A TC=25°C - 0.9 1.2 V VGS=0V,IF=50A,Tj=25°C trr 14 35 56 ns VR=30V,IF=50A,diF/dt=100A/µs Qrr 14 29 58 nC VR=30V,IF=50A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.5,2020-09-21 OptiMOSTMPower-Transistor,60V BSC028N06NS 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 100 140 120 80 100 60 ID[A] Ptot[W] 80 60 40 40 20 20 0 0 25 50 75 100 125 150 0 175 0 20 40 60 TC[°C] 80 100 120 140 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 10 µs 102 100 100 µs 101 0.2 ZthJC[K/W] 1 ms 10 ms DC ID[A] 0.5 0 10 0.1 10-1 0.05 0.02 0.01 single pulse 10-2 10-1 10-2 10-1 100 101 102 10-3 10-6 10-5 VDS[V] 10-3 10-2 10-1 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-4 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.5,2020-09-21 OptiMOSTMPower-Transistor,60V BSC028N06NS Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 400 8 10 V 360 7V 5.5 V 5V 7 6V 320 6 280 RDS(on)[mΩ] ID[A] 5 6V 240 200 160 5.5 V 4 7V 3 120 10 V 2 80 5V 1 40 0 0.0 0.5 1.0 1.5 0 2.0 0 50 100 150 VDS[V] 200 250 300 350 400 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 160 360 320 120 280 gfs[S] ID[A] 240 200 80 160 120 40 80 40 150 °C 0 0 2 25 °C 4 6 8 0 0 VGS[V] 40 60 80 100 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 7 Rev.2.5,2020-09-21 OptiMOSTMPower-Transistor,60V BSC028N06NS Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 6.0 5 5.5 5.0 4 4.5 3.5 3 max VGS(th)[V] RDS(on)[mΩ] 4.0 3.0 2.5 typ 500 µA 50 µA 2 2.0 1.5 1 1.0 0.5 0.0 -60 -20 20 60 100 140 0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=50A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 150 °C 150 °C, max Ciss 103 102 IF[A] C[pF] Coss 102 101 Crss 1 10 0 20 40 60 100 0.00 0.25 VDS[V] 0.75 1.00 1.25 1.50 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.50 IF=f(VSD);parameter:Tj 8 Rev.2.5,2020-09-21 OptiMOSTMPower-Transistor,60V BSC028N06NS Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 30 V 10 125 °C 100 °C 12 V 25 °C 101 48 V IAV[A] VGS[V] 8 100 6 4 2 10-1 100 101 102 103 tAV[µs] 0 0 10 20 30 40 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=50Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 70 66 VBR(DSS)[V] 62 58 54 50 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.5,2020-09-21 OptiMOSTMPower-Transistor,60V BSC028N06NS 5PackageOutlines DOCUMENT NO. Z8B00003332 REVISION 07 DIMENSION A A1 b D D1 D2 E E1 E2 e L M MILLIMETERS MIN. MAX. 0.90 1.20 0.15 0.35 0.34 0.54 4.80 5.35 3.90 4.40 0.03 0.23 5.70 6.10 5.90 6.42 3.88 4.31 1.27 0.45 0.71 0.45 0.69 SCALE 10:1 0 1 2 3mm EUROPEAN PROJECTION ISSUE DATE 06.06.2019 Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.5,2020-09-21 OptiMOSTMPower-Transistor,60V BSC028N06NS PG-TDSON-8: RecommenGHd BoDrdpads & Apertures 1.905 1.905 1.27 3x 0.6 1.27 3x copper Figure 2 Final Data Sheet 1.6 0.2 1.27 3x 0.825 2.863 0.5 0.925 2.863 1.27 3x 1.905 0.875 1.5 0.75 0.2 2.9 4.455 3.325 0.8 0.5 1.5 0.4 1.905 stencil apertures solder mask all dimensions in mm Outline Boardpads (TDSON-8), dimensions in mm 11 Rev.2.5,2020-09-21 OptiMOS TM Power-Transistor , 60 V BSC028N06NS Dimension in mm Figure 3 Final Data Sheet Outline Tape (TDSON-8) 12 Rev. 2.5, 2020-09-21 OptiMOS TM Power-Transistor , 60 V BSC028N06NS Revision History BSC028N06NS Revision: 2020-09-21, Rev. 2.5 Previous Revision Revision Date Subjects (major changes since last revision) 2014-11-10 Added RthJC_typ, updated outline and footprint drawings, insert footnote "Defined by design...." 2.4 2020-02-04 Update package drawings 2.5 2020-09-21 Update current rating 2.3 Trademarks All referenced product or service names and trademarks are the property of their respective owners. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 München, Germany © 2020 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 13 Rev. 2.5, 2020-09-21