BSC030N04NSG

BSC030N04NS G OptiMOS™3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS(on),max 3.0 mΩ • Optimized technology for DC/DC converters ID 100 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 100% Avalanche tested • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type Package Marking BSC030N04NS G PG-TDSON-8 030N04NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C 100 V GS=10 V, T C=100 °C 84 V GS=10 V, T A=25 °C, R thJA=50 K/W 2) Unit A 23 Pulsed drain current3) I D,pulse T C=25 °C 400 Avalanche current, single pulse 4) I AS T C=25 °C 50 Avalanche energy, single pulse E AS I D=50 A, R GS=25 Ω 115 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 Rev. 1.04 page 1 2009-10-22 BSC030N04NS G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Value T C=25 °C 83 T A=25 °C, T j, T stg -55 ... 150 IEC climatic category; DIN IEC 68-1 Parameter W 2.5 R thJA=50 K/W 2) Operating and storage temperature Unit °C 55/150/56 Values Symbol Conditions Unit min. typ. max. bottom - - 1.5 top - - 18 6 cm2 cooling area2) - - 50 40 - - Thermal characteristics Thermal resistance, junction - case Device on PCB R thJC R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=49 µA 2 - 4 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=40 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=50 A - 2.5 3 mΩ Gate resistance RG - 1.6 - Ω Transconductance g fs 46 91 - S |V DS|>2|I D|R DS(on)max, I D=50 A 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Rev. 1.04 page 2 2009-10-22 BSC030N04NS G Parameter Values Symbol Conditions Unit min. typ. max. - 3700 4900 - 1100 1500 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=20 V, f =1 MHz pF Output capacitance C oss Reverse transfer capacitance Crss - 40 - Turn-on delay time t d(on) - 16 - Rise time tr - 4.0 - Turn-off delay time t d(off) - 23 - Fall time tf - 5.0 - Gate to source charge Q gs - 19 - Gate charge at threshold Q g(th) - 11 - Gate to drain charge Q gd - 5.7 - Switching charge Q sw - 13.4 - Gate charge total Qg - 46 61 Gate plateau voltage V plateau - 5.1 - V Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 10 V - 44 - nC Output charge Q oss V DD=20 V, V GS=0 V - 39 - - - 69 - - 400 V DD=20 V, V GS=10 V, I D=30 A, R G=1.6 Ω ns Gate Charge Characteristics 5) V DD=20 V, I D=30 A, V GS=0 to 10 V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=50 A, T j=25 °C - 0.87 1.2 Reverse recovery charge Q rr V R=20 V, I F=I S, di F/dt =400 A/µs - 45 - 5) T C=25 °C A V nC See figure 16 for gate charge parameter definition Rev. 1.04 page 3 2009-10-22 BSC030N04NS G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 120 90 80 100 70 80 50 I D [A] P tot [W] 60 40 60 40 30 20 20 10 0 0 0 40 80 120 0 160 40 80 T C [°C] 120 160 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 10 limited by on-state resistance 1 µs 10 µs 102 100 µs 10 ms 1 0.5 101 Z thJC [K/W] I D [A] DC 1 ms 0.2 0.1 0.1 0.05 100 0.02 0.01 single pulse 0.01 10-1 10-1 Rev. 1.04 100 V DS [V] 101 102 page 4 0 0 0 0 0 0 1 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] 2009-10-22 BSC030N04NS G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 300 12 7V 10 V 250 10 5V 6.5 V 8 R DS(on) [mΩ] I D [A] 200 150 6V 100 5.5 V 6 6V 4 6.5 V 7V 5.5 V 10 V 50 2 5V 0 0 0 1 2 3 0 10 20 V DS [V] 30 40 50 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 400 160 350 300 120 g fs [S] I D [A] 250 200 80 150 100 40 150 °C 25 °C 50 0 0 2 3 4 5 6 7 8 V GS [V] Rev. 1.04 0 40 80 120 160 I D [A] page 5 2009-10-22 BSC030N04NS G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=50 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=49 µA 5 4 4 3 98 % V GS(th) [V] R DS(on) [mΩ] 3 typ 2 2 1 1 0 0 -60 -20 20 60 100 140 180 -60 -20 20 T j [°C] 60 100 140 180 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 1000 10000 Ciss 150 °C, 98% 25 °C Coss 100 1000 102 150 °C I F [A] C [pF] 10 3 25 °C, 98% 10 100 Crss 101 1 10 0 10 20 30 40 V DS [V] Rev. 1.04 0.0 0.5 1.0 1.5 2.0 V SD [V] page 6 2009-10-22 BSC030N04NS G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD 100 12 20 V 10 25 °C 8V 8 100 °C 32 V V GS [V] I AV [A] 125 °C 10 6 4 2 1 0 1 10 100 1000 0 10 t AV [µs] 20 30 40 50 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 45 V GS Qg V BR(DSS) [V] 40 35 V g s(th) 30 25 Q g(th) Q sw Q gs 20 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 1.04 page 7 2009-10-22 BSC030N04NS G Package Outline PG-TDSON-8 PG-TDSON-8: Outline Footprint Dimensions in mm Rev. 1.04 page 8 2009-10-22 BSC030N04NS G Package Outline PG-TDSON-8: Tape Dimensions in mm Rev. 1.04 page 9 2009-10-22 BSC030N04NS G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.04 page 10 2009-10-22