BSC032NE2LS

BSC032NE2LS MOSFET OptiMOSTMPower-MOSFET,25V SuperSO8 8 Features •OptimizedforhighperformanceBuckconverter •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Value Unit VDS 25 V RDS(on),max 3.2 mΩ ID 84 A QOSS 9.4 nC QG(0V..10V) 16 nC Type/OrderingCode Package BSC032NE2LS PG-TDSON-8 1) 5 6 2 Marking 032NE2LS 3 6 5 4 1 Table1KeyPerformanceParameters Parameter 7 3 2 4 7 8 1 S1 8D S2 7D S3 6D G4 5D RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.3,2019-11-04 OptiMOSTMPower-MOSFET,25V BSC032NE2LS TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.3,2019-11-04 OptiMOSTMPower-MOSFET,25V BSC032NE2LS 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 84 53 68 43 22 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W1) - 336 A TC=25°C - - 45 A TC=25°C EAS - - 20 mJ ID=20A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 37 2.5 W TC=25°C TA=25°C,RthJA=50K/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse Continuous drain current Pulsed drain current2) 3) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - - 3.4 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area1) RthJA - - 50 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Final Data Sheet 3 Rev.2.3,2019-11-04 OptiMOSTMPower-MOSFET,25V BSC032NE2LS 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA - 2 V VDS=VGS,ID=250µA - 0.1 10 10 100 µA VDS=25V,VGS=0V,Tj=25°C VDS=25V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 3.8 2.7 4.8 3.2 mΩ VGS=4.5V,ID=30A VGS=10V,ID=30A Gate resistance RG 0.5 0.9 1.8 Ω - Transconductance gfs 46 93 - S |VDS|>2|ID|RDS(on)max,ID=30A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 25 - Gate threshold voltage VGS(th) 1.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 1200 1596 pF VGS=0V,VDS=12V,f=1MHz Output capacitance Coss - 470 625 pF VGS=0V,VDS=12V,f=1MHz Reverse transfer capacitance Crss - 51 - pF VGS=0V,VDS=12V,f=1MHz Turn-on delay time td(on) - 3.3 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Rise time tr - 2.8 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Turn-off delay time td(off) - 15 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Fall time tf - 2.2 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 3.1 4.1 nC VDD=12V,ID=30A,VGS=0to4.5V Gate charge at threshold Qg(th) - 1.9 - nC VDD=12V,ID=30A,VGS=0to4.5V Gate to drain charge Qgd - 1.9 2.9 nC VDD=12V,ID=30A,VGS=0to4.5V Switching charge Qsw - 3.1 - nC VDD=12V,ID=30A,VGS=0to4.5V Gate charge total Qg - 7.7 10 nC VDD=12V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.7 - V VDD=12V,ID=30A,VGS=0to4.5V Gate charge total Qg - 16 21 nC VDD=12V,ID=30A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 6.7 - nC VDS=0.1V,VGS=0to4.5V Output charge Qoss - 9.4 13 nC VDD=12V,VGS=0V 1) See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.3,2019-11-04 OptiMOSTMPower-MOSFET,25V BSC032NE2LS Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 37 A TC=25°C - 148 A TC=25°C - 0.87 1 V VGS=0V,IF=30A,Tj=25°C - 10 - nC VR=15V,IF=IS,diF/dt=400A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery charge Qrr Final Data Sheet 5 Rev.2.3,2019-11-04 OptiMOSTMPower-MOSFET,25V BSC032NE2LS 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 40 100 35 80 30 60 ID[A] Ptot[W] 25 20 40 15 10 20 5 0 0 40 80 120 0 160 0 40 80 TC[°C] 120 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 10 µs 0.5 102 100 100 µs ZthJC[K/W] ID[A] 0.2 1 ms 101 10 ms DC 0.1 0.05 0.02 10-1 0.01 0 10 10-1 single pulse 10-1 100 101 102 10-2 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.3,2019-11-04 OptiMOSTMPower-MOSFET,25V BSC032NE2LS Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 350 7 10 V 300 5V 6 3.2 V 4.5 V 250 3.5 V 5 4V 4V ID[A] RDS(on)[mΩ] 200 150 3.5 V 100 4.5 V 5V 3 7V 8V 10 V 2 3.2 V 3V 50 4 1 2.8 V 0 0 1 2 0 3 0 10 20 VDS[V] 30 40 50 80 100 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 350 200 300 150 250 ID[A] gfs[S] 200 100 150 100 50 50 150 °C 25 °C 0 0 1 2 3 4 5 0 0 VGS[V] 40 60 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 7 Rev.2.3,2019-11-04 OptiMOSTMPower-MOSFET,25V BSC032NE2LS Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 6 2.5 5 2.0 4 250 µA VGS(th)[V] RDS(on)[mΩ] 1.5 3 typ 1.0 2 0.5 1 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=30A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=250µA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 150 °C Ciss 103 102 IF[A] C[pF] Coss 102 101 Crss 101 0 5 10 15 20 25 100 0.0 VDS[V] 1.0 1.5 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.5 IF=f(VSD);parameter:Tj 8 Rev.2.3,2019-11-04 OptiMOSTMPower-MOSFET,25V BSC032NE2LS Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 10 5V 12 V 20 V 25 °C 101 8 VGS[V] IAV[A] 100 °C 125 °C 100 6 4 2 10-1 100 101 102 103 tAV[µs] 0 0 4 8 12 16 20 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 28 27 26 VBR(DSS)[V] 25 24 23 22 21 20 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.3,2019-11-04 OptiMOSTMPower-MOSFET,25V BSC032NE2LS 5PackageOutlines DOCUMENT NO. Z8B00003332 REVISION 07 DIMENSION A A1 b D D1 D2 E E1 E2 e L M MILLIMETERS MIN. MAX. 0.90 1.20 0.15 0.35 0.34 0.54 4.80 5.35 3.90 4.40 0.03 0.23 5.70 6.10 5.90 6.42 3.88 4.31 1.27 0.45 0.71 0.45 0.69 SCALE 10:1 0 1 2 3mm EUROPEAN PROJECTION ISSUE DATE 06.06.2019 Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.3,2019-11-04 OptiMOSTMPower-MOSFET,25V BSC032NE2LS Dimension in mm Figure2OutlineTape(TDSON-8) Final Data Sheet 11 Rev.2.3,2019-11-04 OptiMOSTMPower-MOSFET,25V BSC032NE2LS PG-TDSON-8: RecommenGHd BoDrdpads & Apertures 1.905 1.905 1.27 3x 0.6 1.27 3x copper Figure 3 Final Data Sheet 1.6 0.2 1.27 3x 0.825 2.863 0.5 0.925 2.863 1.27 3x 1.905 0.875 1.5 0.75 0.2 2.9 4.455 3.325 0.8 0.5 1.5 0.4 1.905 stencil apertures solder mask all dimensions in mm Outline Boardpads (TDSON-8), dimensions in mm 12 Rev.2.3,2019-11-04 OptiMOS TM Power-MOSFET , 25 V BSC032NE2LS Revision History BSC032NE2LS Revision: 2019-11-04, Rev. 2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.3 2019-11-04 Update package drawings Trademarks All referenced product or service names and trademarks are the property of their respective owners. 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The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 13 Rev. 2.3, 2019-11-04