BSC0703LSATMA1

BSC0703LS MOSFET OptiMOSTMPower-Transistor,60V SuperSO8 8 Features •Idealforhigh-frequencyswitching •100%avalanchetested •Superiorthermalresistance •N-channel,logiclevel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Optimizedforchargers 7 5 6 4 1 2 3 6 5 3 2 4 7 8 1 Productvalidation QualifiedaccordingtoJEDECStandard Table1KeyPerformanceParameters S1 8D S2 7D Parameter Value Unit S3 6D VDS 60 V G4 5D RDS(on),max 6.5 mΩ ID 64 A QOSS 19 nC QG(0V..4.5V) 10 nC Type/OrderingCode Package Marking RelatedLinks BSC0703LS PG-TDSON-8 0703LS - Final Data Sheet 1 Rev.2.2,2020-05-15 OptiMOSTMPower-Transistor,60V BSC0703LS TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.2,2020-05-15 OptiMOSTMPower-Transistor,60V BSC0703LS 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 64 41 15 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W1) - 256 A TC=25°C - - 21 mJ ID=40A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 46 2.5 W TC=25°C TA=25°C,RthJA=50K/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse3) EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Device on PCB, 6 cm2 cooling area1) Values Min. Typ. Max. RthJC - 1.6 2.7 K/W - RthJA - - 50 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.2,2020-05-15 OptiMOSTMPower-Transistor,60V BSC0703LS 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 1.7 2.3 V VDS=VGS,ID=20µA - 0.1 10 1 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 5.3 7.2 6.5 9.2 mΩ VGS=10V,ID=32A VGS=4.5V,ID=16A Gate resistance1) RG - 1.2 1.8 Ω - Transconductance gfs 32 63 - S |VDS|>2|ID|RDS(on)max,ID=32A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 60 - Gate threshold voltage VGS(th) 1.1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics1) Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 1400 1800 pF VGS=0V,VDS=30V,f=1MHz Output capacitance Coss - 300 390 pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss - 16 28 pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 5 - ns VDD=30V,VGS=10V,ID=32A, RG,ext=3Ω Rise time tr - 3 - ns VDD=30V,VGS=10V,ID=32A, RG,ext=3Ω Turn-off delay time td(off) - 14 - ns VDD=30V,VGS=10V,ID=32A, RG,ext=3Ω Fall time tf - 3 - ns VDD=30V,VGS=10V,ID=32A, RG,ext=3Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 4.4 - nC VDD=30V,ID=32A,VGS=0to4.5V Qg(th) - 2.4 - nC VDD=30V,ID=32A,VGS=0to4.5V Gate to drain charge Qgd - 3.3 5 nC VDD=30V,ID=32A,VGS=0to4.5V Switching charge Qsw - 5.3 - nC VDD=30V,ID=32A,VGS=0to4.5V Gate charge total Qg - 10 13 nC VDD=30V,ID=32A,VGS=0to4.5V Gate plateau voltage Vplateau - 3.1 - V VDD=30V,ID=32A,VGS=0to4.5V Gate charge total, sync. FET Qg(sync) - 18 - nC VDS=0.1V,VGS=0to10V Qoss - 19 25.5 nC VDD=30V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.2,2020-05-15 OptiMOSTMPower-Transistor,60V BSC0703LS Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 39 A TC=25°C - 156 A TC=25°C - 0.9 1.2 V VGS=0V,IF=32A,Tj=25°C trr - 24 48 ns VR=30V,IF=32,diF/dt=100A/µs Qrr - 14 28 nC VR=30V,IF=32,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.2,2020-05-15 OptiMOSTMPower-Transistor,60V BSC0703LS 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 50 80 40 60 ID[A] Ptot[W] 30 40 20 20 10 0 0 25 50 75 100 125 150 0 175 0 25 50 75 TC[°C] 100 125 150 175 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 102 0.5 10 µs 100 ZthJC[K/W] ID[A] 0.2 100 µs 101 1 ms 10 ms 0.1 0.05 0.02 10-1 DC 0.01 100 10-1 10-1 single pulse 100 101 102 10-2 10-6 10-5 VDS[V] 10-3 10-2 10-1 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-4 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.2,2020-05-15 OptiMOSTMPower-Transistor,60V BSC0703LS Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 250 15 3V 3.2 V 5V 200 12 3.5 V 4V 4.5 V 4.5 V ID[A] RDS(on)[mΩ] 150 4V 100 9 5V 7V 6 10 V 3.5 V 50 3 3.2 V 3V 0 2.8 V 0.0 0.5 1.0 1.5 0 2.0 0 50 100 VDS[V] 150 200 250 80 100 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 250 120 200 80 150 gfs[S] ID[A] 25 °C 150 °C 100 40 50 0 0 2 4 6 8 0 0 VGS[V] 40 60 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 7 Rev.2.2,2020-05-15 OptiMOSTMPower-Transistor,60V BSC0703LS Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 12 3 11 10 9 8 2 max 200 µA VGS(th)[V] RDS(on)[mΩ] 7 6 typ 5 4 20 µA 1 3 2 1 0 -60 -20 20 60 100 140 0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=32A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 150 °C 25°C max 150°C max Ciss 102 IF[A] C[pF] 103 Coss 102 101 101 Crss 0 20 40 60 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.2,2020-05-15 OptiMOSTMPower-Transistor,60V BSC0703LS Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 9 8 30 V 25 °C 101 7 100 °C 125 °C 12 V 48 V IAV[A] VGS[V] 6 5 4 0 10 3 2 1 10-1 100 101 102 103 tAV[µs] 0 0 5 10 15 20 25 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=32Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 70 66 VBR(DSS)[V] 62 58 54 50 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.2,2020-05-15 OptiMOSTMPower-Transistor,60V BSC0703LS 5PackageOutlines DOCUMENT NO. Z8B00003332 REVISION 07 DIMENSION A A1 b D D1 D2 E E1 E2 e L M MILLIMETERS MIN. MAX. 0.90 1.20 0.15 0.35 0.34 0.54 4.80 5.35 3.90 4.40 0.03 0.23 5.70 6.10 5.90 6.42 3.88 4.31 1.27 0.45 0.71 0.45 0.69 SCALE 10:1 0 1 2 3mm EUROPEAN PROJECTION ISSUE DATE 06.06.2019 Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.2,2020-05-15 OptiMOSTMPower-Transistor,60V BSC0703LS PG-TDSON-8: RecommenGHd BoDrdpads & Apertures 1.905 1.905 1.27 3x 0.6 1.27 3x copper Figure 2 Final Data Sheet 1.6 0.2 1.27 3x 0.825 2.863 0.5 0.925 2.863 1.27 3x 1.905 0.875 1.5 0.75 0.2 2.9 4.455 3.325 0.8 0.5 1.5 0.4 1.905 stencil apertures solder mask all dimensions in mm Outline Boardpads (TDSON-8), dimensions in mm 11 Rev.2.2,2020-05-15 OptiMOS TM Power-Transistor , 60 V BSC0703LS Dimension in mm Figure 3 Final Data Sheet Outline Tape (TDSON-8) 12 Rev. 2.2, 2020-05-15 OptiMOS TM Power-Transistor , 60 V BSC0703LS Revision History BSC0703LS Revision: 2020-05-15, Rev. 2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-10-06 Release of final version 2.1 2016-10-20 Update " Features " 2.2 2020-05-15 Update package drawings Trademarks All referenced product or service names and trademarks are the property of their respective owners. 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The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 13 Rev. 2.2, 2020-05-15