BSC074N15NS5

BSC074N15NS5 MOSFET OptiMOSTM5Power-Transistor,150V TSON-8-3 8 7 Features 5 6 6 5 •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Verylowreverserecoverycharge(Qrr) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •Idealforhigh-frequencyswitchingandsynchronousrectification 7 8 Pin 1 2 4 3 3 4 2 1 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters S1 8D S2 7D Parameter Value Unit S3 6D VDS 150 V G4 5D RDS(on),max 7.4 mΩ ID 114 A Qoss 116 nC Qrr 23 nC Type/OrderingCode Package Marking RelatedLinks BSC074N15NS5 TSON-8-3 074N15N - Final Data Sheet 1 Rev.2.0,2019-09-18 OptiMOSTM5Power-Transistor,150V BSC074N15NS5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.0,2019-09-18 OptiMOSTM5Power-Transistor,150V BSC074N15NS5 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 114 80 A VGS=10V,TC=25°C1) VGS=10V,TC=100°C - 456 A TA=25°C - - 210 mJ ID=50A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 214 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Pulsed drain current2) 3) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - 0.4 0.7 °C/W - Thermal resistance, junction - case, top RthJC - - 20 °C/W - Device on PCB, 6 cm² cooling area4) RthJA - - 50 °C/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher Tcase please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Final Data Sheet 3 Rev.2.0,2019-09-18 OptiMOSTM5Power-Transistor,150V BSC074N15NS5 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.8 4.6 V VDS=VGS,ID=136µA - 0.1 10 1 100 µA VDS=120V,VGS=0V,Tj=25°C VDS=120V,VGS=0V,Tj=125°C IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 6.0 6.6 7.4 8.1 mΩ VGS=10V,ID=50A VGS=8V,ID=25A Gate resistance1) RG - 1.0 1.5 Ω - Transconductance gfs 41 81 - S |VDS|≥2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 150 - Gate threshold voltage VGS(th) 3.0 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 3100 4000 pF VGS=0V,VDS=75V,f=1MHz Coss - 770 1000 pF VGS=0V,VDS=75V,f=1MHz Reverse transfer capacitance Crss - 19 33 pF VGS=0V,VDS=75V,f=1MHz Turn-on delay time td(on) - 9 - ns VDD=75V,VGS=10V,ID=50A, RG,ext=3Ω Rise time tr - 4 - ns VDD=75V,VGS=10V,ID=50A, RG,ext=3Ω Turn-off delay time td(off) - 15 - ns VDD=75V,VGS=10V,ID=50A, RG,ext=3Ω Fall time tf - 4 - ns VDD=75V,VGS=10V,ID=50A, RG,ext=3Ω Unit Note/TestCondition Output capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 18 - nC VDD=75V,ID=50A,VGS=0to10V Qg(th) - 12 - nC VDD=75V,ID=50A,VGS=0to10V Gate to drain charge Qgd - 9 13 nC VDD=75V,ID=50A,VGS=0to10V Switching charge Qsw - 14 - nC VDD=75V,ID=50A,VGS=0to10V Gate charge total Qg - 41 52 nC VDD=75V,ID=50A,VGS=0to10V Gate plateau voltage Vplateau - 5.7 - V VDD=75V,ID=50A,VGS=0to10V Output charge1) Qoss - 116 154 nC VDS=75V,VGS=0V 1) 1) 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2019-09-18 OptiMOSTM5Power-Transistor,150V BSC074N15NS5 Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 179 A TC=25°C - 456 A TC=25°C - 0.85 1.2 V VGS=0V,IF=50A,Tj=25°C trr - 29 58 ns VR=75V,IF=50A,diF/dt=100A/µs Qrr - 23 46 nC VR=75V,IF=50A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test. Final Data Sheet 5 Rev.2.0,2019-09-18 OptiMOSTM5Power-Transistor,150V BSC074N15NS5 4Electricalcharacteristicsdiagrams Diagram2:Draincurrent 240 120 200 100 160 80 ID[A] Ptot[W] Diagram1:Powerdissipation 120 60 80 40 40 20 0 0 25 50 75 100 125 150 175 0 200 0 25 50 75 TC[°C] 100 125 150 175 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 100 10 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 1 µs 10 µs 102 100 µs ID[A] ZthJC[K/W] 101 1 ms 100 10-1 DC 10 ms 10-1 10-2 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.0,2019-09-18 OptiMOSTM5Power-Transistor,150V BSC074N15NS5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 500 20.0 10 V 6.5 V 6V 17.5 7V 400 15.0 8V ID[A] 200 7V RDS(on)[mΩ] 12.5 300 10.0 8V 7.5 10 V 6.5 V 5.0 6V 2.5 100 0 0 1 2 3 4 0.0 5 0 40 80 120 VDS[V] 160 ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 200 20.0 175 17.5 150 15.0 125 12.5 RDS(on)[mΩ] ID[A] 200 240 ID[A] 100 75 50 175 °C 10.0 7.5 5.0 25 °C 175 °C 25 0 2.5 25 °C 0 1 2 3 4 5 6 7 VGS[V] 0 2 4 6 8 10 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0.0 RDS(on)=f(VGS),ID=50A;parameter:Tj 7 Rev.2.0,2019-09-18 OptiMOSTM5Power-Transistor,150V BSC074N15NS5 Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 2.4 5 4 1.6 3 VGS(th)[V] RDS(on)(normalizedto25°C) 2.0 1.2 1360 µA 136 µA 2 0.8 1 0.4 0.0 -80 -40 0 40 80 120 160 0 -80 200 -40 0 40 Tj[°C] 80 120 160 RDS(on)=f(Tj),ID=50A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 175 °C 175 °C, max Ciss Coss 102 IF[A] 102 C[pF] 103 101 200 Tj[°C] 101 Crss 0 25 50 75 100 125 150 100 0.00 0.25 VDS[V] 0.75 1.00 1.25 1.50 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.50 IF=f(VSD);parameter:Tj 8 Rev.2.0,2019-09-18 OptiMOSTM5Power-Transistor,150V BSC074N15NS5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 30 V 75 V 120 V 8 101 6 100 °C VGS[V] IAV[A] 25 °C 4 0 10 150 °C 2 10-1 100 101 102 103 tAV[µs] 0 0 10 20 30 40 50 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=50Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 160 158 156 VBR(DSS)[V] 154 152 150 148 146 144 -80 -40 0 40 80 120 160 200 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.0,2019-09-18 OptiMOSTM5Power-Transistor,150V BSC074N15NS5 5PackageOutlines DIMENSION A b b1 c D D1 E E1 E2 E3 e K2 L L1 L2 DOCUMENT NO. Z8B00187559 MILLIMETERS MIN. MAX. 0.34 - 1.10 0.54 0.05 REVISION 01 SCALE 0.20 4.90 4.25 5.90 4.00 3.14 0.20 0 5.10 4.45 6.10 4.20 3.34 0.40 10:1 1 2mm EUROPEAN PROJECTION 1.27 (0.37) 0.60 0.43 0.80 0.63 ISSUE DATE 14.12.2017 (0.25) Figure1OutlineTSON-8-3,dimensionsinmm/inches Final Data Sheet 10 Rev.2.0,2019-09-18 OptiMOSTM5Power-Transistor,150V BSC074N15NS5 RevisionHistory BSC074N15NS5 Revision:2019-09-18,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2019-09-18 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2019InfineonTechnologiesAG AllRightsReserved. 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Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.0,2019-09-18