BSC0923NDIATMA1

BSC0923NDI Dual N-Channel OptiMOS™ MOSFET Product Summary Features Q1 Q2 30 30 V VGS=10 V 5 2.8 mW VGS=4.5 V 7 3.7 40 40 • Dual N-channel OptiMOS™ MOSFET • Optimized for high performance Buck converter VDS • Logic level (4.5V rated) RDS(on),max • 100% avalanche tested ID • Qualified according to JEDEC1) for target applications A • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type Package BSC0923NDI VPhase Marking 0923NDI PG-TISON-8 Maximum ratings, at T j=25 °C, unless otherwise specified 2) Parameter Continuous drain current Value Symbol Conditions ID Q1 Q2 40 40 T A=25 °C, VGS=4.5V3) 17 32 3) 14 25 T A=25 °C, VGS=10V 10 15 160 160 9 20 T C=70 °C, VGS=10V T A=70 °C, VGS=4.5V 4) Pulsed drain current5) I D,pulse T C=70 °C Avalanche energy, single pulse E AS Q1: I D=20 A, Q2: I D=20 A, R GS=25 W Gate source voltage V GS Power dissipation P tot ±20 T A=25 °C 2) T A=25 °C, minimum footprint3) Operating and storage temperature T j, T stg J-STD20 and JESD22 2) One transistor active A mJ V 2.5 2.5 1.0 1.0 -55 ... 150 W °C 55/150/56 IEC climatic category; DIN IEC 68-1 1) Unit 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 4) 5) Device mounted on a minimum pad (one layer, 70 µm thick). One transistor active See figure 3 for more detailed information. Rev.2.0 page 1 2013-07-30 BSC0923NDI Parameter Values Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction case Q1 R thJC - - 4.2 Q2 - - 2.6 Thermal resistance, junction ambient1) Q1 R thJA 6 cm2 cooling area2) - - 50 minimal footprint, steady state3) - - 125 30 - - V - 15 - mV/K V DS=V GS, I D=250 µA 1.2 - 2 V V DS=24 V, V GS=0 V, T j=25 °C - - 1 µA - - 500 V DS=24 V, V GS=0 V, T j=150 °C - - 0.1 - 3 - V GS=20 V, V DS=0 V - - 100 nA - 5.4 7.0 mW - 3 3.7 - 3.8 5.0 - 2.1 2.8 Q1 R G 1.3 2.6 5.2 Q2 0.5 0.9 1.8 32 65 - 43 86 - K/W Q2 Q1 Q2 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Q1 V (BR)DSS V GS=0 V, I D=10 mA Q2 Breakdown voltage temperature coefficient Q1 dV (BR)DSS I D=10 mA, referenced to 25 °C Q2 /dT j Gate threshold voltage Q1 V GS(th) Q2 Zero gate voltage drain current Q1 I DSS Q2 Q1 Q2 Gate-source leakage current Q1 I GSS mA Q2 Drain-source on-state resistance Q1 R DS(on) V GS=4.5 V, I D=20 A Q2 Q1 V GS=10 V, I D=20 A Q2 Gate resistance Transconductance Q1 g fs Q2 Rev.2.0 |V DS|>2|I D|R DS(on)max, I D=20 A page 2 W S 2013-07-30 BSC0923NDI Parameter Values Symbol Conditions Unit min. typ. max. Q1 C iss - 870 1160 Q2 - 1500 2000 - 330 439 - 630 838 Q1 Crss - 49 - Q2 - 88 - Q1 t d(on) - 4.7 Q2 - 4.1 - - 3.8 - - 3.6 - - 17 - Q2 - 19 - Q1 t f - 3.0 - Q2 - 2.6 - Q1 Q gs - 2.4 3.2 Gate to drain charge Q gd - 2.2 2.9 Gate charge total Qg - 6.7 10 Gate plateau voltage V plateau - 2.8 - - 4.0 5.3 - 4.0 5.2 18.4 Dynamic characteristics Input capacitance Output capacitance Q1 C oss Q2 Reverse transfer capacitance Turn-on delay time Rise time Q1 t r Q2 Turn-off delay time Fall time Q1 t d(off) V GS=0 V, V DS= 15 V, f =1 MHz V DD=15 V, V GS=10 V, R G=1.6 W, I D=20 A pF ns Gate Charge Characteristics Gate to source charge Gate to source charge Q2 Q gs V DD=15 V, I D=30 A, V GS=0 to 4.5 V Gate to drain charge Q gd Gate charge total Qg 12 Gate plateau voltage V plateau 2.6 Output charge Q1 Q oss V nC V - 9 12 - 17 23 nC V DD=15 V, V GS=0 V Q2 Rev.2.0 nC page 3 2013-07-30 BSC0923NDI Parameter Values Symbol Conditions Unit min. typ. max. - - 30 Reverse Diode Diode continuous forward current Q1 I S Q2 A 40 T C=25 °C Diode pulse current Diode forward voltage Reverse recovery charge Q1 I S,pulse - - 160 Q2 - - 160 Q1 V SD V GS=0 V, I F=20 A, T j=25 °C - 0.9 1 Q2 V GS=0 V, I F=4 A, T j=25 °C - 0.54 0.7 - 5 - nC - 5 - nC Q1 Q rr Q2 V R=15 V, I F=I S, di F/dt =100 A/µs V 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) device mounted on a minimum pad (one layer, 70 µm thick) Rev.2.0 page 4 2013-07-30 BSC0923NDI 1 Power dissipation (Q1) P tot=f(T A)3) 1.2 1.2 1 1 0.8 0.8 Ptot [W] Ptot [W] P tot=f(T A) 2 Power dissipation (Q2) 3) 0.6 0.6 0.4 0.4 0.2 0.2 0 0 0 40 80 120 160 0 40 TA [°C] 80 120 160 120 160 TA [°C] 3 Drain current (Q1) 4 Drain current (Q2) I D=f(T C) I D=f(T C) parameter: V GS≥10 V parameter: V GS≥10 V 40 40 30 30 ID [A] 50 ID [A] 50 20 20 10 10 0 0 0 40 80 120 160 TC [°C] Rev.2.0 0 40 80 TC [°C] page 5 2013-07-30 BSC0923NDI 5 Safe operating area (Q1) 6 Safe operating area (Q2) I D=f(V DS); T C=25 °C; D =0 I D=f(V DS); T C=25 °C; D =0 parameter: t p parameter: t p 103 103 1 µs 1 µs 102 102 10 µs 10 µs 100 µs 100 µs 1 ms 101 ID [A] ID [A] 1 ms 10 ms 101 10 ms DC DC 100 100 10-1 10-1 10-1 100 101 102 10-1 100 VDS [V] 101 102 VDS [V] 7 Max. transient thermal impedance (Q1) 8 Max. transient thermal impedance (Q2) Z thJC=f(t p) Z thJC=f(t p) parameter: D =t p/T parameter: D =t p/T 101 101 0.5 0.5 100 ZthJC [K/W] ZthJC [K/W] 0.2 0.2 100 0.1 0.1 0.05 0.02 0.05 0.01 10-1 0.02 single pulse 0.01 single pulse 10-1 10-2 10-5 10-4 10-3 10-2 10-1 100 tp [s] Rev.2.0 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 6 2013-07-30 BSC0923NDI 9 Typ. output characteristics (Q1) 10 Typ. output characteristics (Q2) I D=f(V DS); T j=25 °C I D=f(V DS); T j=25 °C parameter: V GS parameter: V GS 160 400 10 V 4.5 V 10 V 4.5 V 120 300 4V 4V ID [A] ID [A] 3.5 V 80 3.3 V 200 3.5 V 3.3 V 3V 40 100 3V 2.8 V 2.8 V 0 0 0 1 2 3 0 1 VDS [V] 2 3 VDS [V] 11 Typ. drain-source on resistance (Q1) 12 Typ. drain-source on resistance (Q2) R DS(on)=f(I D); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 15 5 3.3 V 3.5 V 12 4 3.3 V 3V 4V RDS(on) [mW] RDS(on) [mW] 3.5 V 9 4V 6 4.5 V 4.5 V 3 5V 10 V 2 5V 10 V 3 1 0 0 0 20 40 60 80 ID [A] Rev.2.0 0 20 40 60 80 ID [A] page 7 2013-07-30 BSC0923NDI I D=f(V GS); |V DS |>2 | I D| R DS(on)max I D=f(V GS); |V DS |>2 | I D| R DS(on)max parameter: T j parameter: T j 160 160 120 120 ID [A] 14 Typ. transfer characteristics (Q2) ID [A] 13 Typ. transfer characteristics (Q1) 80 40 80 40 150 °C 150 °C 25 °C 0 25 °C 0 0 1 2 3 4 0 1 2 VGS [V] 3 4 VGS [V] 15 Drain-source on-state resistance (Q1) 16 Drain-source on-state resistance (Q2) R DS(on)=f(T j); I D=20 A; V GS=10 V R DS(on)=f(T j); I D=20 A; V GS=10 V 9 5 8 4 7 RDS(on) [mW] RDS(on) [mW] 6 5 typ 4 3 typ 2 3 2 1 1 0 0 -60 -20 20 60 100 140 180 Tj [°C] Rev.2.0 -60 -20 20 60 100 140 180 Tj [°C] page 8 2013-07-30 BSC0923NDI 18 Typ. gate threshold voltage (Q2) V GS(th)=f(T j); V GS=V DS; I D=250 µA V GS(th)=f(T j); V GS=V DS; I D=10 mA 2.8 2.8 2.4 2.4 2 2 1.6 1.6 VGS(th) [V] VGS(th) [V] 17 Typ. gate threshold voltage (Q1) 1.2 1.2 0.8 0.8 0.4 0.4 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 19 Typ. capacitances (Q1) 20 Typ. capacitances (Q2) C =f(V DS); V GS=0 V; f =1 MHz C =f(V DS); V GS=0 V; f =1 MHz 104 104 Ciss 103 103 Ciss Coss C [pF] C [pF] Coss 102 102 Crss Crss 101 101 0 10 20 30 VDS [V] Rev.2.0 0 10 20 30 VDS [V] page 9 2013-07-30 BSC0923NDI 21 Forward characteristics of reverse diode (Q1) 22 Forward characteristics of reverse diode (Q2) I F=f(V SD) I F=f(V SD) parameter: T j parameter: T j 103 103 100 °C 150 °C 102 102 25 °C 25 °C IF [A] IF [A] 150 °C 101 100 -55 °C 101 100 10-1 10-1 0 0.2 0.4 0.6 0.8 1 1.2 0 0.2 0.4 VSD [V] 0.6 0.8 1 VSD [V] 23 Avalanche characteristics (Q1) 24 Avalanche characteristics (Q2) I AS=f(t AV); R GS=25 W I AS=f(t AV); R GS=25 W parameter: T j(start) parameter: T j(start) 102 102 IAV [A] IAV [A] 25 °C 25 °C 101 101 100 °C 100 °C 125 °C 125 °C 100 100 100 101 102 103 tAV [µs] Rev.2.0 100 101 102 103 tAV [µs] page 10 2013-07-30 BSC0923NDI 25 Typ. gate charge (Q1) 26 Typ. gate charge (Q2) V GS=f(Q gate); I D=20 A pulsed V GS=f(Q gate); I D=20 A pulsed parameter: V DD parameter: V DD 10 10 15 V 15 V 6V 8 8 6V 24 V 24 V VGS [V] 6 VGS [V] 6 4 4 2 2 0 0 0 2 4 6 8 10 12 14 0 10 20 Qgate [nC] 30 Qgate [nC] 27 Drain-source breakdown voltage (Q1) 28 Typ. drain-source leakage current (Q2) V BR(DSS)=f(T j); I D=1 mA I DSS=f(V DS ); V GS=0 V parameter: T j 35 10-2 34 33 10-3 32 IDSS [A] VBR(DSS) [V] 125 °C 31 30 100 °C 10-4 29 75 °C 28 10-5 27 25 °C 26 10-6 25 -60 -20 20 60 100 140 180 5 10 15 20 25 VDSj [V] Tj [°C] Rev.2.0 0 page 11 2013-07-30 BSC0923NDI PG-TISON Rev.2.0 page 12 2013-07-30 BSC0923NDI PG-TISON Rev.2.0 page 13 2013-07-30 BSC0923NDI Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.0 page 14 2013-07-30