BSC093N15NS5ATMA1

BSC093N15NS5 MOSFET OptiMOSTM5Power-Transistor,150V PG-TDSON-8 8 Features 7 •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Verylowreverserecoverycharge(Qrr) •150°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification 5 6 Pin 1 Value Unit VDS 150 V RDS(on),max 9.3 mΩ ID 87 A Qrr 58 nC 8 3 3 2 4 1 Drain Pin 5-8 Gate Pin 4 *1 Source Pin 1-3 *1: Internal body diode Type/OrderingCode Package BSC093N15NS5 PG-TDSON-8 1) 7 4 2 Table1KeyPerformanceParameters Parameter 6 5 Marking RelatedLinks 093N15NS - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.4,2022-07-28 OptiMOSTM5Power-Transistor,150V BSC093N15NS5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Final Data Sheet 2 Rev.2.4,2022-07-28 OptiMOSTM5Power-Transistor,150V BSC093N15NS5 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 87 55 A TC=25°C TC=100°C - 348 A TC=25°C - - 130 mJ ID=50A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 139 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Pulsed drain current1) 2) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - 0.54 0.9 K/W - Thermal resistance, junction - ambient, RthJA 6 cm2 cooling area3) - - 50 K/W - Unit Note/TestCondition 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Min. Typ. Max. V(BR)DSS 150 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 3.0 3.8 4.6 V VDS=VGS,ID=107µA Zero gate voltage drain current IDSS - 0.1 10 1 100 µA VDS=120V,VGS=0V,Tj=25°C VDS=120V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 7.9 8.7 9.3 10.5 mΩ VGS=10V,ID=44A VGS=8V,ID=22A Gate resistance4) RG - 0.9 1.4 Ω - Transconductance gfs 34 67 - S |VDS|>2|ID|RDS(on)max,ID=44A 1) See Diagram 3 for more detailed information See Diagram 13 for more detailed information 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 4) Defined by design. Not subject to production test 2) Final Data Sheet 3 Rev.2.4,2022-07-28 OptiMOSTM5Power-Transistor,150V BSC093N15NS5 Table5Dynamiccharacteristics Parameter Symbol Values Unit Note/TestCondition 3230 pF VGS=0V,VDS=75V,f=1MHz 604 803 pF VGS=0V,VDS=75V,f=1MHz - 15 26 pF VGS=0V,VDS=75V,f=1MHz td(on) - 14 - ns VDD=75V,VGS=10V,ID=44A, RG,ext=3Ω Rise time tr - 4.3 - ns VDD=75V,VGS=10V,ID=44A, RG,ext=3Ω Turn-off delay time td(off) - 14.4 - ns VDD=75V,VGS=10V,ID=44A, RG,ext=3Ω Fall time tf - 3.8 - ns VDD=75V,VGS=10V,ID=44A, RG,ext=3Ω Unit Note/TestCondition Min. Typ. Max. Ciss - 2430 Output capacitance Coss - Reverse transfer capacitance1) Crss Turn-on delay time Input capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Values Min. Typ. Max. Qgs - 14 - nC VDD=75V,ID=44A,VGS=0to10V Gate to drain charge Qgd - 6.8 10.2 nC VDD=75V,ID=44A,VGS=0to10V Switching charge Qsw - 13.4 - nC VDD=75V,ID=44A,VGS=0to10V Gate charge total Qg - 33 40.7 nC VDD=75V,ID=44A,VGS=0to10V Gate plateau voltage Vplateau - 5.7 - V VDD=75V,ID=44A,VGS=0to10V Qoss - 91 121 nC VDD=75V,VGS=0V Unit Note/TestCondition Gate to source charge 1) 1) 1) Output charge Table7Reversediode Parameter Symbol Diode continous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) 2) Values Min. Typ. Max. IS - - 87 A TC=25°C IS,pulse - - 348 A TC=25°C VSD - 0.88 1.2 V VGS=0V,IF=44A,Tj=25°C trr - 49 98 ns VR=75V,IF=44,diF/dt=100A/µs Qrr - 58 116 nC VR=75V,IF=44,diF/dt=100A/µs Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.4,2022-07-28 OptiMOSTM5Power-Transistor,150V BSC093N15NS5 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 150 100 125 80 100 ID[A] Ptot[W] 60 75 40 50 20 25 0 0 25 50 75 100 125 150 0 175 0 25 50 TC[°C] 75 100 125 150 175 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 100 10 1 µs 0.5 102 10 µs 0.2 10 100 µs -1 0.1 1 ZthJC[K/W] ID[A] 10 1 ms 0 10 10 ms 0.05 0.02 0.01 10-2 DC 10-1 10-2 single pulse 10-1 100 101 102 103 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 5 Rev.2.4,2022-07-28 OptiMOSTM5Power-Transistor,150V BSC093N15NS5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 360 24 10V 320 20 8V 280 5.5 V 240 6V 16 RDS(on)[mΩ] ID[A] 6.5 V 200 160 7V 120 7V 12 8V 8 10 V 6.5 V 80 6V 4 40 5.5 V 0 0 1 2 3 4 5 6 0 7 0 25 50 75 VDS[V] 100 125 150 175 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 320 140 280 120 240 100 200 gfs[S] ID[A] 80 160 60 120 40 80 20 40 25 °C 150 °C 0 0 1 2 3 4 5 6 7 8 0 0 20 VGS[V] 60 80 100 120 140 160 ID[A] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 6 Rev.2.4,2022-07-28 OptiMOSTM5Power-Transistor,150V BSC093N15NS5 Diagram9:Drain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 20 5 16 4 1070 µA 12 3 max VGS(th)[V] RDS(on)[mΩ] 107 µA typ 8 4 2 1 0 -75 -50 -25 0 25 50 75 100 125 150 0 -75 175 -50 -25 0 Tj[°C] 25 50 75 100 125 150 175 Tj[°C] RDS(on)=f(Tj),ID=44A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 150 °C 25°C max 150°C max Ciss Coss 103 IF[A] C[pF] 102 102 Crss 101 101 100 0 30 60 90 120 150 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 7 Rev.2.4,2022-07-28 OptiMOSTM5Power-Transistor,150V BSC093N15NS5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 75 V 8 25 °C 30 V 100 °C 6 VGS[V] 125 °C IAS[A] 120 V 101 4 2 100 10-1 100 101 102 103 tAV[µs] 0 0 10 20 30 40 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=44Apulsed;parameter:VDD Diagram15:Min.drain-sourcebreakdownvoltage Diagram Gate charge waveforms 160 158 156 VBR(DSS)[V] 154 152 150 148 146 144 -75 -50 -25 0 25 50 75 100 125 150 175 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 8 Rev.2.4,2022-07-28 OptiMOSTM5Power-Transistor,150V BSC093N15NS5 5PackageOutlines PACKAGE - GROUP NUMBER: DIMENSIONS A b c D D1 D2 E E1 e L L1 PG-TDSON-8-U08 MILLIMETERS MIN. MAX. 0.90 1.20 0.34 0.54 0.15 0.35 4.80 5.35 3.90 4.40 0.00 0.22 5.70 6.10 4.05 4.25 1.27 0.45 0.65 0.45 0.65 Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 9 Rev.2.4,2022-07-28 OptiMOSTM5Power-Transistor,150V BSC093N15NS5 RevisionHistory BSC093N15NS5 Revision:2022-07-28,Rev.2.4 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2015-10-09 Release of final version 2.1 2016-01-22 Update diagram 13 2.2 2016-06-10 Update trr and Qrr 2.3 2020-01-27 Update Diagrams 4, 7 and 11 2.4 2022-07-28 Update outline drawing Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2022InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 10 Rev.2.4,2022-07-28