BSC094N06LS5

BSC094N06LS5 MOSFET OptiMOSTMPower-Transistor,60V SuperSO8 8 Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel,logiclevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 7 5 6 4 1 2 3 6 5 3 2 4 7 8 1 Table1KeyPerformanceParameters Parameter Value Unit S1 8D VDS 60 V S2 7D RDS(on),max 9.4 mΩ S3 6D ID 47 A G4 5D QOSS 13 nC QG(0V..4.5V) 7 nC Type/OrderingCode Package Marking RelatedLinks BSC094N06LS5 PG-TDSON-8 094N06L - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.1,2020-05-15 OptiMOSTMPower-Transistor,60V BSC094N06LS5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.1,2020-05-15 OptiMOSTMPower-Transistor,60V BSC094N06LS5 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 47 30 11 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W1) - 188 A TC=25°C - - 13 mJ ID=30A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 36 2.1 W TC=25°C TA=25°C,RthJA=50K/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse3) EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Device on PCB, 6 cm2 cooling area1) Values Min. Typ. Max. RthJC - 2.1 3.5 K/W - RthJA - - 50 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.1,2020-05-15 OptiMOSTMPower-Transistor,60V BSC094N06LS5 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 1.7 2.3 V VDS=VGS,ID=14µA - 0.1 10 1 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 7.7 11 9.4 13.4 mΩ VGS=10V,ID=24A VGS=4.5V,ID=12A Gate resistance1) RG - 1.1 1.65 Ω - Transconductance gfs 22 45 - S |VDS|>2|ID|RDS(on)max,ID=24A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 60 - Gate threshold voltage VGS(th) 1.1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics1) Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 970 1300 pF VGS=0V,VDS=30V,f=1MHz Output capacitance Coss - 210 280 pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss - 12 21 pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 4 - ns VDD=30V,VGS=10V,ID=24A, RG,ext=1.6Ω Rise time tr - 3 - ns VDD=30V,VGS=10V,ID=24A, RG,ext=1.6Ω Turn-off delay time td(off) - 14 - ns VDD=30V,VGS=10V,ID=24A, RG,ext=1.6Ω Fall time tf - 3 - ns VDD=30V,VGS=10V,ID=24A, RG,ext=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 3 - nC VDD=30V,ID=24A,VGS=0to4.5V Qg(th) - 2 - nC VDD=30V,ID=24A,VGS=0to4.5V Gate to drain charge Qgd - 2 3.5 nC VDD=30V,ID=24A,VGS=0to4.5V Switching charge Qsw - 4 - nC VDD=30V,ID=24A,VGS=0to4.5V Gate charge total Qg - 7 9.4 nC VDD=30V,ID=24A,VGS=0to4.5V Gate plateau voltage Vplateau - 3.1 - V VDD=30V,ID=24A,VGS=0to4.5V Gate charge total, sync. FET Qg(sync) - 12 - nC VDS=0.1V,VGS=0to10V Qoss - 13 18 nC VDD=30V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.1,2020-05-15 OptiMOSTMPower-Transistor,60V BSC094N06LS5 Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 30 A TC=25°C - 188 A TC=25°C - 0.9 1.2 V VGS=0V,IF=24A,Tj=25°C trr - 18 36 ns VR=30V,IF=24A,diF/dt=100A/µs Qrr - 6 12 nC VR=30V,IF=24A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test. Final Data Sheet 5 Rev.2.1,2020-05-15 OptiMOSTMPower-Transistor,60V BSC094N06LS5 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 40 50 40 30 ID[A] Ptot[W] 30 20 20 10 10 0 0 25 50 75 100 125 150 0 175 0 25 50 75 TC[°C] 100 125 Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 175 101 10 1 µs 102 0.5 100 1 10 100 µs 0.2 0.1 ZthJC[K/W] 10 µs ID[A] 150 TC[°C] 0.05 0.02 10-1 0.01 100 single pulse 1 ms DC 10-1 10-1 100 101 10 ms 102 10-2 10-6 10-5 VDS[V] 10-3 10-2 10-1 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-4 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.1,2020-05-15 OptiMOSTMPower-Transistor,60V BSC094N06LS5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 160 20 10 V 140 4V 5V 120 15 4.5 V 4.5 V 5V RDS(on)[mΩ] ID[A] 100 80 4V 60 5.5 V 10 6V 7V 10 V 40 5 3.5 V 3.2 V 20 3V 2.8 V 0 0.0 0.5 1.0 1.5 0 2.0 0 40 80 VDS[V] 120 160 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 80 80 70 60 60 gfs[S] ID[A] 50 40 40 30 20 20 10 0 150 °C 0 1 2 25 °C 3 4 5 6 0 0 VGS[V] 40 60 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 7 Rev.2.1,2020-05-15 OptiMOSTMPower-Transistor,60V BSC094N06LS5 Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 18 3 16 14 12 2 max VGS(th)[V] RDS(on)[mΩ] 140 µA 10 typ 8 6 14 µA 1 4 2 0 -60 -20 20 60 100 140 0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=24A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 150 °C 25°C max 150°C max Ciss 103 102 IF[A] C[pF] Coss 102 101 Crss 101 100 0 20 40 60 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.1,2020-05-15 OptiMOSTMPower-Transistor,60V BSC094N06LS5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 9 8 30 V 7 VGS[V] IAV[A] 6 25 °C 101 48 V 12 V 5 4 100 °C 3 2 125 °C 1 100 100 101 102 103 tAV[µs] 0 0 5 10 15 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=24Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 70 66 VBR(DSS)[V] 62 58 54 50 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.1,2020-05-15 OptiMOSTMPower-Transistor,60V BSC094N06LS5 5PackageOutlines DOCUMENT NO. Z8B00003332 REVISION 07 DIMENSION A A1 b D D1 D2 E E1 E2 e L M MILLIMETERS MIN. MAX. 0.90 1.20 0.15 0.35 0.34 0.54 4.80 5.35 3.90 4.40 0.03 0.23 5.70 6.10 5.90 6.42 3.88 4.31 1.27 0.45 0.71 0.45 0.69 SCALE 10:1 0 1 2 3mm EUROPEAN PROJECTION ISSUE DATE 06.06.2019 Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.1,2020-05-15 OptiMOSTMPower-Transistor,60V BSC094N06LS5 PG-TDSON-8: RecommenGHd BoDrdpads & Apertures 1.905 1.905 1.27 3x 0.6 1.27 3x copper Figure 2 Final Data Sheet 1.6 0.2 1.27 3x 0.825 2.863 0.5 0.925 2.863 1.27 3x 1.905 0.875 1.5 0.75 0.2 2.9 4.455 3.325 0.8 0.5 1.5 0.4 1.905 stencil apertures solder mask all dimensions in mm Outline Boardpads (TDSON-8), dimensions in mm 11 Rev.2.1,2020-05-15 OptiMOS TM Power-Transistor , 60 V BSC094N06LS5 Dimension in mm Figure 3 Final Data Sheet Outline Tape (TDSON-8) 12 Rev. 2.1, 2020-05-15 OptiMOS TM Power-Transistor , 60 V BSC094N06LS5 Revision History BSC094N06LS5 Revision: 2020-05-15, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-09-23 Release of final version 2.1 2020-05-15 Update package drawings Trademarks All referenced product or service names and trademarks are the property of their respective owners. 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The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 13 Rev. 2.1, 2020-05-15