BSC0996NSATMA1

BSC0996NS MOSFET OptiMOSªPower-MOSFET,34V SuperSO8 8 Features Features •Optimizedfor5Vdriverapplication(WirelessCharging) •LowFOMSWforHighFrequencySMPS •100%Avalanchetested •Improvedswitchingbehaviour •N-channel •Verylowon-resistanceRDS(on)@VGS=4.5V •ExcellentgatechargexRDS(on)product(FOM) •QualifiedaccordingtoJEDEC1)fortargetapplications •Superiorthermalresistance •Pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Value Unit VDS 34 V RDS(on),max 9 mΩ ID 13 A QOSS 10 nC QG(0V..4.5V) 7.2 nC 5 6 2 3 3 2 4 7 8 1 S1 8D S2 7D S3 6D G4 5D Type/OrderingCode Package Marking RelatedLinks BSC0996NS PG-TDSON-8 0996NS - 1) 6 5 4 1 Table1KeyPerformanceParameters Parameter 7 J-STD20 and JESD22 Final Data Sheet 1 Rev.2.0,2016-07-13 OptiMOSªPower-MOSFET,34V BSC0996NS TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.0,2016-07-13 OptiMOSªPower-MOSFET,34V BSC0996NS 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 13 8.5 A VGS=10V,TA=100°C VGS=10V,TA=100°C - 52 A TA=25°C - - 35 A TC=25°C EAS - - 10 mJ ID=25A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 2.5 W TA=25°C,RthJA=50K/W3) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse Pulsed drain current1) 2) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - - 4.6 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area3) RthJA - - 50 K/W - 1) See Diagram 3 for more detailed information See Diagram 13 for more detailed information 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) Final Data Sheet 3 Rev.2.0,2016-07-13 OptiMOSªPower-MOSFET,34V BSC0996NS 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA - 2 V VDS=VGS,ID=250µA - 0.1 10 1 100 µA VDS=34V,VGS=0V,Tj=25°C VDS=34V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=16V,VDS=0V Drain-source on-state resistance RDS(on) - 10 8 12 9 mΩ VGS=4.5V,ID=8A VGS=10V,ID=8A Gate resistance1) RG 1.5 3 6.0 Ω - Transconductance gfs 13 26 - S |VDS|>2|ID|RDS(on)max,ID=8A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 34 - Gate threshold voltage VGS(th) 1.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Values Min. Typ. Max. Ciss - 1100 1500 pF VGS=0V,VDS=15V,f=1MHz Output capacitance Coss - 390 520 pF VGS=0V,VDS=15V,f=1MHz Reverse transfer capacitance Crss - 25 - pF VGS=0V,VDS=15V,f=1MHz Turn-on delay time td(on) - 9.7 - ns VDD=15V,VGS=4.5V,ID=8A, RG,ext=1.6Ω Rise time tr - 4.4 - ns VDD=15V,VGS=4.5V,ID=8A, RG,ext=1.6Ω Turn-off delay time td(off) - 8.9 - ns VDD=15V,VGS=4.5V,ID=8A, RG,ext=1.6Ω Fall time tf - 5.4 - ns VDD=15V,VGS=4.5V,ID=8A, RG,ext=1.6Ω Unit Note/TestCondition Input capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 3.2 - nC VDD=15V,ID=8A,VGS=0to4.5V Gate charge at threshold Qg(th) - 1.7 - nC VDD=15V,ID=8A,VGS=0to4.5V Gate to drain charge Qgd - 1.6 - nC VDD=15V,ID=8A,VGS=0to4.5V Switching charge Qsw - 3.0 - nC VDD=15V,ID=8A,VGS=0to4.5V Gate charge total Qg - 7.2 - nC VDD=15V,ID=8A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.8 - V VDD=15V,ID=8A,VGS=0to4.5V Gate charge total Qg - 15 20 nC VDD=15V,ID=8A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 6.2 - nC VDS=0.1V,VGS=0to4.5V Qoss - 10 13 nC VDD=15V,VGS=0V 1) 1) Output charge 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2016-07-13 OptiMOSªPower-MOSFET,34V BSC0996NS Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 2 A TA=25°C - 52 A TA=25°C - 0.77 1.1 V VGS=0V,IF=2.3A,Tj=25°C - 10 - nC VR=15V,IF=IS,diF/dt=400A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery charge Qrr Final Data Sheet 5 Rev.2.0,2016-07-13 OptiMOSªPower-MOSFET,34V BSC0996NS 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 3.0 15 2.5 10 ID[A] Ptot[W] 2.0 1.5 1.0 5 0.5 0.0 0 40 80 120 0 160 0 40 80 TA[°C] 120 160 TA[°C] Ptot=f(TA) ID=f(TA);parameter:VGS Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 102 10 0.5 102 1 µs 0.1 101 0.05 1 ms ZthJA[K/W] 10 ms ID[A] 0.2 101 10 µs 100 µs 0 10 DC 0.02 10 0 0.01 10-1 single pulse 10 -1 10-2 10-3 10-1 100 101 102 10-2 10-5 10-4 10-3 10-2 VDS[V] 100 101 102 103 tp[s] ID=f(VDS);TA=25°C;D=0;parameter:tp Final Data Sheet 10-1 ZthJA=f(tp);parameter:D=tp/T 6 Rev.2.0,2016-07-13 OptiMOSªPower-MOSFET,34V BSC0996NS Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 150 28 24 10 V 5V 120 3V 4.5 V 20 ID[A] RDS(on)[mΩ] 90 4V 60 3.2 V 16 3.5 V 4V 12 4.5 V 5V 6V 8 10 V 3.5 V 30 3.2 V 4 3V 2.8 V 0 0 1 2 0 3 0 5 10 VDS[V] 15 20 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 100 120 100 80 80 gfs[S] ID[A] 60 25 °C 150 °C 60 40 40 20 0 20 0 1 2 3 4 5 0 0 VGS[V] 80 120 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 7 Rev.2.0,2016-07-13 OptiMOSªPower-MOSFET,34V BSC0996NS Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 24 2.5 20 2.0 1.5 VGS(th)[V] RDS(on)[mΩ] 16 12 1.0 typ 8 0.5 4 0 -60 -20 20 60 100 0.0 -60 140 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=8A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=250µA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 150 °C Ciss 3 10 102 IF[A] C[pF] Coss 102 Crss 101 101 100 0 10 20 100 30 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.0,2016-07-13 OptiMOSªPower-MOSFET,34V BSC0996NS Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 10 15 V 6V 24 V 25 °C VGS[V] IAV[A] 8 101 100 °C 6 125 °C 4 2 100 100 101 102 103 0 0 tAV[µs] 4 8 12 16 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=8Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 34 32 VBR(DSS)[V] 30 28 26 24 22 20 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.0,2016-07-13 OptiMOSªPower-MOSFET,34V BSC0996NS 5PackageOutlines   Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.0,2016-07-13 OptiMOSªPower-MOSFET,34V BSC0996NS Dimension in mm Figure2OutlineTape(TDSON-8) Final Data Sheet 11 Rev.2.0,2016-07-13 OptiMOSªPower-MOSFET,34V BSC0996NS   Figure3OutlineFootprint(TDSON-8) Final Data Sheet 12 Rev.2.0,2016-07-13 OptiMOSªPower-MOSFET,34V BSC0996NS RevisionHistory BSC0996NS Revision:2016-07-13,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-07-13 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 13 Rev.2.0,2016-07-13