BSC146N10LS5
MOSFET
OptiMOSTM5Power-Transistor,100V
SuperSO8
8
Features
•OptimizedforhighperformanceSMPS,e.g.sync.Rec.
•100%avalanchetested
•Superiorthermalresistance
•N-channel,logiclevel
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
7
5
6
4
1
2
3
6
5
3
2
4
7
8
1
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
100
V
RDS(on),max
14.6
mΩ
ID
44
A
Qoss
20
nC
QG(0V..4.5V)
7.6
nC
Type/OrderingCode
Package
BSC146N10LS5
PG-TDSON-8
Final Data Sheet
Marking
146N10LS
1
S1
8D
S2
7D
S3
6D
G4
5D
RelatedLinks
-
Rev.2.3,2020-08-06
OptiMOSTM5Power-Transistor,100V
BSC146N10LS5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
2
Rev.2.3,2020-08-06
OptiMOSTM5Power-Transistor,100V
BSC146N10LS5
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Unit
Note/TestCondition
44
28
10
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=10V,TA=25°C,
RTHJA=50°C/W2)
-
176
A
TA=25°C
-
-
30
mJ
ID=20A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
52
2.5
W
TC=25°C
TA=25°C,RTHJA=50°C/W3)
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category; DIN IEC 68-1:
55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche energy, single pulse
EAS
Gate source voltage
1)
Continuous drain current
Pulsed drain current3)
4)
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Device on PCB,
6 cm² cooling area2)
Values
Min.
Typ.
Max.
RthJC
-
1.4
2.4
°C/W -
RthJA
-
-
50
°C/W -
1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See Diagram 3 for more detailed information
4)
See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.2.3,2020-08-06
OptiMOSTM5Power-Transistor,100V
BSC146N10LS5
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
1.7
2.3
V
VDS=VGS,ID=23µA
-
0.1
10
1
100
µA
VDS=100V,VGS=0V,Tj=25°C
VDS=100V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
12.2
15.8
14.6
20.8
mΩ
VGS=10V,ID=22A
VGS=4.5V,ID=11A
Gate resistance1)
RG
-
1
1.5
Ω
-
Transconductance
gfs
19
38
-
S
|VDS|≥2|ID|RDS(on)max,ID=22A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
100
-
Gate threshold voltage
VGS(th)
1.1
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance1)
Values
Min.
Typ.
Max.
Ciss
-
1000
1300
pF
VGS=0V,VDS=50V,f=1MHz
Coss
-
170
220
pF
VGS=0V,VDS=50V,f=1MHz
Reverse transfer capacitance
Crss
-
9
15
pF
VGS=0V,VDS=50V,f=1MHz
Turn-on delay time
td(on)
-
5
-
ns
VDD=50V,VGS=10V,ID=22A,
RG,ext=3Ω
Rise time
tr
-
3
-
ns
VDD=50V,VGS=10V,ID=22A,
RG,ext=3Ω
Turn-off delay time
td(off)
-
14
-
ns
VDD=50V,VGS=10V,ID=22A,
RG,ext=3Ω
Fall time
tf
-
3
-
ns
VDD=50V,VGS=10V,ID=22A,
RG,ext=3Ω
Unit
Note/TestCondition
Output capacitance1)
1)
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Values
Min.
Typ.
Max.
Qgs
-
3.3
-
nC
VDD=50V,ID=22A,VGS=0to4.5V
Qg(th)
-
1.7
-
nC
VDD=50V,ID=22A,VGS=0to4.5V
Gate to drain charge
Qgd
-
2.8
4.2
nC
VDD=50V,ID=22A,VGS=0to4.5V
Switching charge
Qsw
-
4.4
-
nC
VDD=50V,ID=22A,VGS=0to4.5V
Gate charge total
Qg
-
7.6
10
nC
VDD=50V,ID=22A,VGS=0to4.5V
Gate plateau voltage
Vplateau
-
3.3
-
V
VDD=50V,ID=22A,VGS=0to4.5V
Gate charge total, sync. FET
Qg(sync)
-
13
-
nC
VDS=0.1V,VGS=0to10V
Qoss
-
20
27
nC
VDS=50V,VGS=0V
1)
1)
1)
Output charge
1)
2)
Defined by design. Not subject to production test.
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.3,2020-08-06
OptiMOSTM5Power-Transistor,100V
BSC146N10LS5
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Diode pulse current
Diode forward voltage
1)
Reverse recovery time
1)
Reverse recovery charge
1)
Values
Unit
Note/TestCondition
44
A
TC=25°C
-
176
A
TC=25°C
-
0.9
1.1
V
VGS=0V,IF=22A,Tj=25°C
trr
-
26
52
ns
VR=50V,IF=22A,diF/dt=100A/µs
Qrr
-
19
38
nC
VR=50V,IF=22A,diF/dt=100A/µs
Min.
Typ.
Max.
IS
-
-
IS,pulse
-
VSD
Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.2.3,2020-08-06
OptiMOSTM5Power-Transistor,100V
BSC146N10LS5
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
60
50
50
40
40
ID[A]
Ptot[W]
30
30
20
20
10
10
0
0
20
40
60
80
100
120
140
0
160
0
20
40
60
TC[°C]
80
100
120
140
160
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
102
10
1 µs
102
10 µs
101
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
100 µs
101
ZthJC[K/W]
10 ms
ID[A]
1 ms
DC
100
100
10-1
-1
10
10-2
10-1
100
101
102
103
10-2
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.3,2020-08-06
OptiMOSTM5Power-Transistor,100V
BSC146N10LS5
Diagram5:Typ.outputcharacteristics
175
Diagram6:Typ.drain-sourceonresistance
40
7V
10 V
35
150
30
125
3V
5V
3.2 V
ID[A]
4.5 V
75
50
4V
25
3.5 V
3.5 V
4V
4.5 V
20
5V
15
7V
10 V
10
3V
0
RDS(on)[mΩ]
25
100
5
3.2 V
2.8 V
0
1
2
3
4
0
5
0
20
40
VDS[V]
60
80
100
ID[A]
ID=f(VDS),Tj=25°C;parameter:VGS
RDS(on)=f(ID),Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.drain-sourceonresistance
80
40
35
60
30
25 °C
RDS(on)[mΩ]
ID[A]
25
150 °C
40
150 °C
20
15
25 °C
20
10
5
0
0
1
2
3
4
5
6
VGS[V]
0
2
4
6
8
10
VGS[V]
ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
0
RDS(on)=f(VGS),ID=22A;parameter:Tj
7
Rev.2.3,2020-08-06
OptiMOSTM5Power-Transistor,100V
BSC146N10LS5
Diagram9:Normalizeddrain-sourceonresistance
Diagram10:Typ.gatethresholdvoltage
2.0
2.4
2.0
1.6
1.2
VGS(th)[V]
RDS(on)(normalizedto25°C)
1.6
0.8
1.2
230 µA
23 µA
0.8
0.4
0.4
0.0
-80
-40
0
40
80
120
0.0
-80
160
-40
0
Tj[°C]
40
80
120
160
Tj[°C]
RDS(on)=f(Tj),ID=22A,VGS=10V
VGS(th=f(Tj),VGS=VDS;parameter:ID
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
25 °C
25 °C, max
150 °C
150 °C, max
103
Ciss
102
Coss
IF[A]
C[pF]
102
101
101
Crss
100
0
20
40
60
80
100
100
0.00
0.25
VDS[V]
0.75
1.00
1.25
1.50
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.50
IF=f(VSD);parameter:Tj
8
Rev.2.3,2020-08-06
OptiMOSTM5Power-Transistor,100V
BSC146N10LS5
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
2
10
10
20 V
50 V
80 V
8
101
6
VGS[V]
IAV[A]
25 °C
100 °C
125 °C
4
0
10
2
10-1
100
101
102
103
tAV[µs]
0
0.0
2.5
5.0
7.5
10.0
12.5
15.0
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj,start
VGS=f(Qgate),ID=22Apulsed,Tj=25°C;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Diagram Gate charge waveforms
108
106
VBR(DSS)[V]
104
102
100
98
96
94
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.3,2020-08-06
OptiMOSTM5Power-Transistor,100V
BSC146N10LS5
5PackageOutlines
Figure1OutlinePG-TDSON-8,dimensionsinmm
Final Data Sheet
10
Rev.2.3,2020-08-06
OptiMOSTM5Power-Transistor,100V
BSC146N10LS5
PG-TDSON-8: RecommenGHd BoDrdpads & Apertures
1.905
1.905
1.27
3x
0.6
1.27
3x
copper
Figure 2
Final Data Sheet
1.6
0.2
1.27
3x
0.825
2.863
0.5
0.925
2.863
1.27
3x
1.905
0.875
1.5
0.75
0.2
2.9
4.455
3.325
0.8
0.5
1.5
0.4
1.905
stencil apertures
solder mask
all dimensions in mm
Outline Boardpads (TDSON-8), dimensions in mm
11
Rev.2.3,2020-08-06
OptiMOS TM 5 Power-Transistor , 100 V
BSC146N10LS5
Revision History
BSC146N10LS5
Revision: 2020-08-06, Rev. 2.3
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2016-09-30
Release of final version
2.1
2019-05-10
Update Rg, trr, Qrr, Diagrams 5, 8 and 9
2.2
2019-05-20
Update Id pulse, Diagrams 2, 3, 12
2.3
2020-08-06
Update Max Current Rating
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously
improve the quality of this document. Please send your proposal (including a reference to this document) to:
erratum@infineon.com
Published by
Infineon Technologies AG
81726 München, Germany
© 2020 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the
product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation
warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the
product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s
technical departments to evaluate the suitability of the product for the intended application and the completeness of the product
information given in this document with respect to such application.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or
automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a
failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and
aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Final Data Sheet
12
Rev. 2.3, 2020-08-06