BSM150GB170DN2HOSA1

BSM 150 GB 170 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • RG on,min = 10 Ohm Type VCE IC BSM 150 GB 170 DN2 1700V 220A Package Ordering Code HALF-BRIDGE 2 C67070-A2704-A67 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 kΩ Values 1700 Unit V 1700 Gate-emitter voltage VGE DC collector current IC ± 20 A TC = 25 °C 220 TC = 80 °C 150 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 440 TC = 80 °C 300 Ptot Power dissipation per IGBT TC = 25 °C W 1250 Chip temperature Tj Storage temperature Tstg Thermal resistance, chip case RthJC ≤ 0.1 Diode thermal resistance, chip case RthJCD ≤ 0.32 Insulation test voltage, t = 1min. Vis Creepage distance + 150 °C -55 ... + 150 K/W 4000 Vac - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - Semiconductor Group 1 - 55 / 150 / 56 Aug-01-1996 BSM 150 GB 170 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 10 mA V 4.8 5.5 6.2 VGE = 15 V, IC = 150 A, Tj = 25 °C - 3.4 3.9 VGE = 15 V, IC = 150 A, Tj = 125 °C - 4.6 5.3 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) ICES mA VCE = 1700 V, VGE = 0 V, Tj = 25 °C - 1 1.5 VCE = 1700 V, VGE = 0 V, Tj = 125 °C - 4 - Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V nA - - 400 AC Characteristics Transconductance gfs VCE = 20 V, IC = 150 A Input capacitance 54 nF - 20 - - 2 - - 0.55 - Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S 2 Aug-01-1996 BSM 150 GB 170 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) ns VCC = 1200 V, VGE = 15 V, IC = 150 A RGon = 10 Ω Rise time - 520 1000 - 200 400 - 1200 1800 - 110 160 tr VCC = 1200 V, VGE = 15 V, IC = 150 A RGon = 10 Ω Turn-off delay time td(off) VCC = 1200 V, VGE = -15 V, IC = 150 A RGoff = 10 Ω Fall time tf VCC = 1200 V, VGE = -15 V, IC = 150 A RGoff = 10 Ω Free-Wheel Diode Diode forward voltage VF V IF = 150 A, VGE = 0 V, Tj = 25 °C - 2.3 2.8 IF = 150 A, VGE = 0 V, Tj = 125 °C - 2.1 - Reverse recovery time trr µs IF = 150 A, VR = -1200 V, VGE = 0 V diF/dt = -1200 A/µs, Tj = 125 °C Reverse recovery charge - 0.6 - Qrr µC IF = 150 A, VR = -1200 V, VGE = 0 V diF/dt = -1200 A/µs Tj = 25 °C - 11 - Tj = 125 °C - 36 - Semiconductor Group 3 Aug-01-1996 BSM 150 GB 170 DN2 Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 3 1300 tp = 1.5µs W A 1100 Ptot IC 1000 10 µs 10 2 900 100 µs 800 700 10 1 1 ms 600 500 10 ms 400 10 0 300 DC 200 100 0 0 20 40 60 80 100 120 °C 10 -1 0 10 160 10 1 10 2 10 3 TC V VCE Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T IGBT 10 0 240 A K/W 200 IC ZthJC 180 10 -1 160 140 10 -2 120 D = 0.50 100 0.20 0.10 80 10 -3 60 0.05 single pulse 0.02 40 0.01 20 0 0 20 40 60 80 100 120 °C 160 TC Semiconductor Group 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Aug-01-1996 BSM 150 GB 170 DN2 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 µs, Tj = 25 °C parameter: tp = 80 µs, Tj = 125 °C 300 300 A A 260 IC 240 220 200 260 17V 15V 13V 11V 9V 7V IC 240 220 200 180 180 160 160 140 140 120 120 100 100 80 80 60 60 40 40 20 0 0.0 20 0 0.0 1.0 2.0 3.0 4.0 V 6.0 VCE 17V 15V 13V 11V 9V 7V 1.0 2.0 3.0 4.0 V 6.0 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 µs, VCE = 20 V 600 A 500 IC 450 400 350 300 250 200 150 100 50 0 0 2 4 Semiconductor Group 6 8 10 V 14 VGE 5 Aug-01-1996 BSM 150 GB 170 DN2 Typ. capacitances Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 150 A C = f (VCE) parameter: VGE = 0, f = 1 MHz 10 2 20 V nF VGE 16 C 800 V 14 1200 V Ciss 10 1 12 10 Coss 8 10 0 6 Crss 4 2 0 0.0 0.4 0.8 1.2 1.6 µC 10 -1 0 2.2 5 10 15 20 25 30 V 40 VCE QGate Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150°C parameter: VGE = 15 V ICsc = f(VCE) , Tj = 150°C parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 25 nH 2.5 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 2 0.0 0 0 250 500 Semiconductor Group 750 1000 1250 1500 V 2000 VCE 6 0 250 500 750 1000 1250 1500 V 2000 VCE Aug-01-1996 BSM 150 GB 170 DN2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125°C t = f (RG) , inductive load , Tj = 125°C par.: VCE = 1200 V, VGE = ± 15 V, RG = 10 Ω par.: VCE = 1200 V, VGE = ± 15 V, IC = 150 A 10 4 10 4 ns ns t tdoff t tdoff 10 3 10 3 tdon tdon tr tr tf 10 2 10 1 0 50 100 150 200 250 A IC tf 10 2 10 1 0 350 10 20 30 40 Ω 60 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125°C E = f (RG) , inductive load , Tj = 125°C par.: VCE = 1200 V, VGE = ± 15 V, RG = 10 Ω par.: VCE = 1200 V, VGE = ± 15 V, IC = 150 A 400 400 mWs mWs E E 300 300 Eon 250 250 200 200 150 Eon 150 Eoff 100 100 Eoff 50 0 0 50 50 100 Semiconductor Group 150 200 250 A IC 350 7 0 0 10 20 30 40 Ω 60 RG Aug-01-1996 BSM 150 GB 170 DN2 Forward characteristics of fast recovery Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T reverse diode IF = f(VF) parameter: Tj 10 0 300 A K/W Tj=125°C 260 IF Diode 240 Tj=25°C ZthJC 10 -1 220 200 180 160 10 -2 140 D = 0.50 120 0.20 0.10 100 0.05 10 -3 80 0.02 60 single pulse 0.01 40 20 0 0.0 0.5 1.0 Semiconductor Group 1.5 2.0 2.5 V VF 3.5 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 8 Aug-01-1996 BSM 150 GB 170 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 420 g Semiconductor Group 9 Aug-01-1996