BSP149H6327

BSP149 SIPMOS® Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode VDS 200 V RDS(on),max 3.5 Ω IDSS,min 0.14 A • dv /dt rated • Available with V GS(th) indicator on reel • Pb-free lead plating; RoHS compliant PG-SOT223 • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21 Type Type BSP149 BSP149 BSP149 BSP149 Package Package PG-SOT223 PG-SOT223 PG-SOT223 PG-SOT223 Tape and Reel Information Tape and Reel Information H6327: 1000 pcs/reel H6327: 1000 pcs/reel H6906: 1000 pcs/reel H6906: pcs/reel bands1) sorted 1000 in VGS(th) Marking Marking BSP149 BSP149 BSP149 BSP149 Packaging Packaging Non dry Non dry Non dry Non dry Maximum ratings ratings, at T j=25 °C, °C unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C 0.66 T A=70 °C 0.53 I D,pulse T A=25 °C 2.6 Reverse diode dv /dt dv /dt I D=0.66 A, V DS=160 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage V GS Pulsed drain current ±20 ESD Class (JESD22-A114-HBM) A kV/µs V 1B (>500,2|I D|R DS(on)max, I D=0.48 A 0.4 0.8 - S V DS=3 V, I D=400 µA -1.2 - -1 V K -1.35 - -1.15 L -1.5 - -1.3 M -1.65 - -1.45 N -1.8 - -1.6 Transconductance g fs Ω Threshold voltage V GS(th) sorted in bands3) J V GS(th) 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (single layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 2.1 page 2 2012-11-28 BSP149 Parameter Values Symbol Conditions Unit min. typ. max. - 326 430 - 41 55 Dynamic characteristics pF Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 17 25 Turn-on delay time t d(on) - 5.1 7.7 Rise time tr - 3.4 5.1 Turn-off delay time t d(off) - 45 68 Fall time tf - 21 31 Gate to source charge Q gs - 0.74 1.0 Gate to drain charge Q gd - 5.6 8.4 Gate charge total Qg - 11 14 Gate plateau voltage V plateau - 0.16 - V - - 0.66 A - - 2.6 - 0.9 1.2 V - 42 65 ns - 60 90 nC V GS=-3 V, V DS=25 V, f =1 MHz V DD=100 V, V GS=-2…7 V, I D=0.50 A, R G=6 Ω ns Gate Charge Characteristics V DD=160 V, I D=0.05 A, V GS=-3 to 5 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev. 2.1 T A=25 °C V GS=-3 V, I F=0.66 A, T j=25 °C V R=100 V, I F=0.5 A, di F/dt =100 A/µs page 3 2012-11-28 BSP149 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 2 0.7 0.6 1.5 0.4 ID [A] Ptot [W] 0.5 1 0.3 0.2 0.5 0.1 0 0 0 40 80 120 160 0 40 80 TA [°C] 120 TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 101 160 102 limited by on-state resistance 10 µs 100 µs 0.5 100 ZthJA [K/W] 1 ms ID [A] 10 ms 10-1 0.2 101 0.1 DC 0.05 10-2 single pulse 0.02 0.01 10-3 100 100 101 102 103 VDS [V] Rev. 2.1 10-4 10-3 10-2 10-1 100 101 102 tp [s] page 4 2012-11-28 BSP149 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 10 V 1V 6 1 -0.2 V 0.5 V 0V -0.1 V 0.5 V 0.2 V 0.1 V 5 0.8 4 ID [A] 0.6 RDS(on) [Ω] 0.2 V 0.1 V 0V 0.4 -0.1 V 3 2 -0.2 V 1V 0.2 1 0 10 V 0 0 2 4 6 8 0 10 0.2 0.4 VDS [V] 0.6 0.8 1 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 1.2 2 1 1.6 0.8 ID [A] gfs [S] 1.2 0.6 0.8 0.4 0.4 0.2 0 -2 -1 0 1 2 3 VGS [V] Rev. 2.1 0 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 ID [A] page 5 2012-11-28 BSP149 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.07 A; V GS=0 V V GS(th)=f(T j); V DS=3 V; I D=400 µA parameter: I D 8 0 -0.5 6 98 % VGS(th) [V] RDS(on) [Ω] -1 98 % 4 typ -1.5 -2 2 2% typ -2.5 0 -3 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Threshold voltage bands 12 Typ. capacitances I D=f(V GS); V DS=3 V; T j=25 °C C =f(V DS); V GS=-3 V; f =1 MHz 10 1000 Ciss N 1 M L K J C [pF] ID [mA] 400 µA 100 Coss 0.1 Crss 0.01 10 -2 -1.5 -1 -0.5 VGS [V] Rev. 2.1 0 10 20 30 VDS [V] page 6 2012-11-28 BSP149 13 Forward characteristics of reverse diode 15 Typ. gate charge I F=f(V SD) V GS=f(Q gate); I D=0.5 A pulsed parameter: T j parameter: V DD 10 5 0.5 VDS(max) 4 150 °C 0.2 VDS(max) 25 °C 3 0.8 VDS(max) 0.12 A 2 1 IF [A] VGS [V] 150 °C, 98% 1 0 25 °C, 98% -1 0.1 -2 -3 -4 0.01 0 0.5 1 25 °C, 98% 1.5 2 VSD [V] 0 2 4 6 8 10 12 Qgate [nC] 16 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 µA VBR(DSS) [V] 240 200 160 -60 -20 20 60 100 140 180 Tj [°C] Rev. 2.1 page 7 2012-11-28 BSP149 Package Outline: Footprint: Packaging: Dimensions in mm Rev. 2.1 page 8 2012-11-28 BSP149 Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 page 9 2012-11-28