BSS606NH6327XTSA1

BSS606N OptiMOS™-3 Small-Signal-Transistor Product Summary Features VDS • N-channel RDS(on),max • Enhancement mode • Logic level (4.5V rated) 60 V VGS=10 V 60 mW VGS=4.5 V 90 ID 3.2 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT-89 • 100%lead-free; Halogen-free; RoHS compliant 4 1 Type Package Tape and Reel Information Marking Halogen-free BSS606N PG-SOT-89 H6327: 3000 pcs/ reel KE Yes 2 3 Package Non-dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C 3.2 T A=70 °C 2.6 12.8 Unit A Pulsed drain current I D,pulse T A=25 °C Avalanche energy, single pulse E AS I D=3.2 A, R GS=25 W 14 mJ Reverse diode dv /dt dv /dt I D=3.2 A, V DS=48 V, di /dt =100 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS Power dissipation 1) P tot Operating and storage temperature T j, T stg ESD Class T A=25 °C JESD22-A114 -HBM Soldering Temperature V 1.0 W -55 ... 150 °C class 0 (< 250V) 260 °C IEC climatic category; DIN IEC 68-1 1) ±20 55/150/56 Value refers to minimum footprint Rev 2.2 page 1 2013-04-03 BSS606N Parameter Values Symbol Conditions Unit min. typ. max. - - 10 minimal footprint - - 125 6 cm2 cooling area2) - - 70 Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 60 - - Gate threshold voltage V GS(th) V DS=0 V, I D=15 µA 1.3 1.8 2.3 Drain-source leakage current I DSS V DS=60 V, V GS=0 V, T j=25 °C - - 1 V DS=60 V, V GS=0 V, T j=150 °C - - 100 V mA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=2.6 A - 66 90 mW V GS=10 V, I D=3.2 A - 47 60 |V DS|>2|I D|R DS(on)max, I D=2.6 A - 6 - Transconductance g fs S 2) Performed on 40mmx40mmx1.5mm epoxy FR4 PCB with 6cm 2 (one layer, 70μm thick) copper area for drain connectio. PCB is vertical without blown air. Rev 2.2 page 2 2013-04-03 BSS606N Parameter Values Symbol Conditions Unit min. typ. max. - 494 657 - 131 174 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 10.2 15.3 Turn-on delay time t d(on) - 5.6 - Rise time tr - 2.6 - Turn-off delay time t d(off) - 13 - Fall time tf - 2.1 - Gate to source charge Q gs - 1.6 2.1 Gate to drain charge Q gd - 1.0 1.4 Gate charge total Qg - 3.7 5.6 Gate plateau voltage V plateau - 3.2 - V - - 0.9 A - - 12.8 - 0.8 1.1 V - 22 - ns - 11 - nC V GS=0 V, V DS=25 V, f =1 MHz V DD=30 V, V GS=10 V, I D=3.2 A, R G,ext=6 W pF ns Gate Charge Characteristics V DD=48 V, I D=3.2 A, V GS=0 to 5 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev 2.2 T A=25 °C V GS=0 V, I F=3.2 A, T j=25 °C V R=30 V, I F=3.2 A, di F/dt =100 A/µs page 3 2013-04-03 BSS606N 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 1.2 3.6 3.2 1 2.8 2.4 ID [A] Ptot [W] 0.8 0.6 0.4 2 1.6 1.2 0.8 0.2 0.4 0 0 0 40 80 120 160 0 20 40 60 TA [°C] 80 100 120 140 160 101 102 103 TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 102 103 1 µs 101 100 µs 102 10 µs 0.5 1 ms 0.2 ZthJA [K/W] ID [A] 10 ms 100 DC 0.1 101 0.05 0.02 0.01 10-1 100 10-2 10-1 10-1 100 101 102 VDS [V] Rev 2.2 single pulse 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2013-04-03 BSS606N 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 10 150 4V 9 3V 10 V 3.3 V 4.5 V 3.5 V 8 7 100 ID [A] 3.5 V 5 4 4V RDS(on) [mW] 6 3.3 V 4.5 V 50 10 V 3 2 3V 1 2.8 V 0 0 0 2 4 6 8 0 2 4 VDS [V] 6 8 10 8 10 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 10 12 9 10 8 7 8 gfs [S] ID [A] 6 5 6 4 4 3 150 °C 25 °C 2 2 1 0 0 0 1 2 3 4 5 VGS [V] Rev 2.2 0 2 4 6 ID [A] page 5 2013-04-03 BSS606N 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=3.2 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=15 µA parameter: I D 120 2.8 2.4 100 max 2 typ VGS(th) [V] RDS(on) [mW] 80 max 60 typ 1.6 min 1.2 40 0.8 20 0.4 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j 103 101 Ciss 100 25 °C 150 °C IF [A] C [pF] Coss 102 10-1 150 °C, 98% 25 °C, 98% 10-2 Crss 101 10-3 0 10 20 30 VDS [V] Rev 2.2 0 0.4 0.8 1.2 1.6 VSD [V] page 6 2013-04-03 BSS606N 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=3.2 A pulsed parameter: T j(start) parameter: V DD 101 7 6 25 °C 5 30 V 100 12 V VGS [V] IAV [A] 100 °C 125 °C 48 V 4 3 10-1 2 1 10-2 0 100 101 102 0 103 1 2 3 4 5 Qgate [nC] tAV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=250 µA 65 V GS 64 Qg 63 VBR(DSS) [V] 62 61 60 V gs(th) 59 58 57 Q g(th) Q sw 56 Q gs 55 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev 2.2 page 7 2013-04-03 BSS606N SOT-89 Package Outline: Footprint: Packaging: Dimensions in mm Rev 2.2 page 8 2013-04-03 BSS606N Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.2 page 9 2013-04-03