BSZ018NE2LSI

BSZ018NE2LSI MOSFET OptiMOSTMPower-MOSFET,25V TSDSON-8FL(S3O8) Features •OptimizedforhighperformanceBuckconverter •MonolithicintegratedSchottkylikediode •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 25 V RDS(on),max 1.8 mΩ ID 153 A QOSS 23 nC QG(0V..10V) 36 nC S1 8D S2 7D S3 6D G4 5D Type/OrderingCode Package Marking RelatedLinks BSZ018NE2LSI PG-TSDSON-8 FL 018NE2I - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.3,2020-12-21 OptiMOSTMPower-MOSFET,25V BSZ018NE2LSI TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.3,2020-12-21 OptiMOSTMPower-MOSFET,25V BSZ018NE2LSI 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 153 97 130 82 22 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=4.5V,TA=25°C,RthJA=60K/W2) - 612 A TC=25°C - - 20 A TC=25°C EAS - - 80 mJ ID=20A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 69 2.1 W TC=25°C TA=25°C,RthJA=60K/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse Continuous drain current1) Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Device on PCB, 6 cm2 cooling area2) Values Min. Typ. Max. RthJC - - 1.8 K/W - RthJA - - 60 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) >See figure 3 for more detailed information 4) See figure 13 for more detailed information Final Data Sheet 3 Rev.2.3,2020-12-21 OptiMOSTMPower-MOSFET,25V BSZ018NE2LSI 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage V(BR)DSS Breakdown voltage temperature coefficient Values Unit Note/TestCondition - V VGS=0V,ID=10mA 15 - mV/K ID=10mA,referencedto25°C 1.2 - 2.0 V VDS=VGS,ID=250µA IDSS - 2 0.5 - mA VDS=20V,VGS=0V,Tj=25°C VDS=20V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 2.0 1.5 2.5 1.8 mΩ VGS=4.5V,ID=20A VGS=10V,ID=20A Gate resistance RG 0.4 0.8 1.6 Ω - Transconductance gfs 50 100 - S |VDS|>2|ID|RDS(on)max,ID=20A Unit Note/TestCondition Min. Typ. Max. 25 - dV(BR)DSS/dTj - Gate threshold voltage VGS(th) Zero gate voltage drain current Table5Dynamiccharacteristics Parameter Symbol Values Min. Typ. Max. Ciss - 2500 3400 pF VGS=0V,VDS=12V,f=1MHz Output capacitance Coss - 1100 1500 pF VGS=0V,VDS=12V,f=1MHz Reverse transfer capacitance Crss - 110 - pF VGS=0V,VDS=12V,f=1MHz Turn-on delay time td(on) - 5.2 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Rise time tr - 4.8 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Turn-off delay time td(off) - 25 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Fall time tf - 3.6 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Input capacitance1) 1) 1) Defined by design. Not subject to production test Final Data Sheet 4 Rev.2.3,2020-12-21 OptiMOSTMPower-MOSFET,25V BSZ018NE2LSI Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge2) Values Unit Note/TestCondition 8.4 nC VDD=12V,ID=30A,VGS=0to4.5V 4.1 - nC VDD=12V,ID=30A,VGS=0to4.5V - 4.3 6.5 nC VDD=12V,ID=30A,VGS=0to4.5V Qsw - 6.6 - nC VDD=12V,ID=30A,VGS=0to4.5V Gate charge total Qg - 17 23 nC VDD=12V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.5 - V VDD=12V,ID=30A,VGS=0to4.5V Gate charge total Qg - 36 48 nC VDD=12V,ID=30A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 15 - nC VDS=0.1V,VGS=0to4.5V Qoss - 23 31 nC VDD=12V,VGS=0V Unit Note/TestCondition Min. Typ. Max. Qgs - 6.3 Gate charge at threshold Qg(th) - Gate to drain charge2) Qgd Switching charge 2) 2) 2) Output charge Table7Reversediode Parameter Symbol Diode continuous forward current Values Min. Typ. Max. IS - - 69 A TC=25°C Diode pulse current IS,pulse - - 612 A TC=25°C Diode forward voltage VSD - 0.55 0.7 V VGS=0V,IF=7A,Tj=25°C Reverse recovery charge Qrr - 5 - nC VR=15V,IF=7A,diF/dt=400A/µs 1) 2) See ″Gate charge waveforms″ for parameter definition Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.3,2020-12-21 OptiMOSTMPower-MOSFET,25V BSZ018NE2LSI 4Electricalcharacteristicsdiagrams Diagram2:Draincurrent 80 160 70 140 60 120 50 100 ID[A] Ptot[W] Diagram1:Powerdissipation 40 80 30 60 20 40 10 20 0 0 40 80 120 0 160 0 20 40 60 TC[°C] 80 100 120 140 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 10 µs 102 100 0.5 0.2 1 ms 10 ms 101 ZthJC[K/W] ID[A] 100 µs DC 0.1 0.05 10-1 0.02 0.01 single pulse 0 10 10-1 10-1 10 100 101 102 -2 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.3,2020-12-21 OptiMOSTMPower-MOSFET,25V BSZ018NE2LSI Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 300 3.0 10 V 4.5 V 5V 4V 3.5 V 2.5 2.0 RDS(on)[mΩ] 200 ID[A] 3.2 V 3V 100 1.5 1.0 2.8 V 0.5 0 0 1 2 0.0 3 0 10 20 VDS[V] 30 40 50 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 300 400 250 320 200 gfs[S] ID[A] 240 150 160 100 80 50 150 °C 25 °C 0 0 1 2 3 4 5 0 0 VGS[V] 80 120 160 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 7 Rev.2.3,2020-12-21 OptiMOSTMPower-MOSFET,25V BSZ018NE2LSI Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 3.0 2.5 2.5 2.0 10 mA 1.5 VGS(th)[V] RDS(on)[mΩ] 2.0 typ 1.5 1.0 1.0 0.5 0.5 0.0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=20A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=10mA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 -55 °C 25 °C 125 °C 150 °C Ciss 102 Coss IF[A] C[pF] 103 101 Crss 2 10 100 101 0 5 10 15 20 25 10-1 0.0 VDS[V] 0.8 1.2 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.4 IF=f(VSD);parameter:Tj 8 Rev.2.3,2020-12-21 OptiMOSTMPower-MOSFET,25V BSZ018NE2LSI Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 12 V 10 5V 20 V 8 VGS[V] IAV[A] 25 °C 100 °C 101 125 °C 6 4 2 100 100 101 102 103 tAV[µs] 0 0 10 20 30 40 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Typ.drain-sourceleakagecurrent Diagram Gate charge waveforms -2 10 10-3 125 °C IDSS[A] 100 °C 10-4 75 °C 10-5 25 °C 10-6 0 5 10 15 20 Vsd[V] IDSS=f(VDS);VGS=0V;parameter:Tj Final Data Sheet 9 Rev.2.3,2020-12-21 OptiMOSTMPower-MOSFET,25V BSZ018NE2LSI 5PackageOutlines PACKAGE - GROUP NUMBER: REVISION: 03 DIMENSIONS A b c D D1 D2 E E1 E2 e L L1 L2 aaa PG-TSDSON-8-U03 DATE: 20.10.2020 MILLIMETERS MIN. MAX. 0.90 1.10 0.24 0.44 (0.20) 3.20 3.40 2.19 2.39 1.54 1.74 3.20 3.40 2.01 2.21 0.10 0.30 0.65 0.30 0.50 0.40 0.60 0.50 0.70 0.06 Figure1OutlinePG-TSDSON-8FL,dimensionsinmm Final Data Sheet 10 Rev.2.3,2020-12-21 OptiMOSTMPower-MOSFET,25V BSZ018NE2LSI RevisionHistory BSZ018NE2LSI Revision:2020-12-21,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.2 2020-08-11 Update current rating and footnotes 2.3 2020-12-21 Update package drawing Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2020InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.3,2020-12-21