BSZ075N08NS5
MOSFET
OptiMOSª5Power-Transistor,80V
TSDSON-8FL(S3O8)
Features
•Idealforhighfrequencyswitchingandsync.rec.
•OptimizedtechnologyforDC/DCconverters
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•N-channel,normallevel
•100%avalanchetested
•Pb-freeplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Halogen-freeaccordingtoIEC61249-2-21
•Highersolderjointreliabilitywithenlargedsourceinterconnection
Table1KeyPerformanceParameters
S1
8D
S2
7D
Parameter
Value
Unit
S3
6D
VDS
80
V
G4
5D
RDS(on),max
7.5
mΩ
ID
73
A
Qoss
29
nC
QG(0V..10V)
24
nC
Type/OrderingCode
Package
Marking
RelatedLinks
BSZ075N08NS5
PG-TSDSON-8 FL
075N08N
-
1)
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.3,2020-10-23
OptiMOSª5Power-Transistor,80V
BSZ075N08NS5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.2.3,2020-10-23
OptiMOSª5Power-Transistor,80V
BSZ075N08NS5
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
73
47
A
TC=25°C
TC=100°C
-
292
A
TC=25°C
-
-
104
mJ
ID=20A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
69
W
TC=25°C
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche energy, single pulse
EAS
Gate source voltage
Pulsed drain current2)
3)
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Device on PCB,
6 cm2 cooling area4)
Values
Min.
Typ.
Max.
RthJC
-
1.1
1.8
K/W
-
RthJA
-
-
60
K/W
-
1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Final Data Sheet
3
Rev.2.3,2020-10-23
OptiMOSª5Power-Transistor,80V
BSZ075N08NS5
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
3
3.8
V
VDS=VGS,ID=36µA
-
0.1
10
1
100
µA
VDS=80V,VGS=0V,Tj=25°C
VDS=80V,VGS=0V,Tj=125°C
IGSS
-
1
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
6.2
8.5
7.5
10.2
mΩ
VGS=10V,ID=20A
VGS=6V,ID=5A
Gate resistance
RG
-
1.3
2
Ω
-
Transconductance
gfs
21
42
-
S
|VDS|>2|ID|RDS(on)max,ID=20A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
80
-
Gate threshold voltage
VGS(th)
2.2
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance1)
Values
Min.
Typ.
Max.
Ciss
-
1600
2080
pF
VGS=0V,VDS=40V,f=1MHz
Coss
-
280
365
pF
VGS=0V,VDS=40V,f=1MHz
Reverse transfer capacitance
Crss
-
15
26
pF
VGS=0V,VDS=40V,f=1MHz
Turn-on delay time
td(on)
-
10
-
ns
VDD=40V,VGS=10V,ID=20A,
RG,ext=1.6Ω
Rise time
tr
-
4
-
ns
VDD=40V,VGS=10V,ID=20A,
RG,ext=1.6Ω
Turn-off delay time
td(off)
-
19
-
ns
VDD=40V,VGS=10V,ID=20A,
RG,ext=1.6Ω
Fall time
tf
-
4
-
ns
VDD=40V,VGS=10V,ID=20A,
RG,ext=1.6Ω
Unit
Note/TestCondition
Output capacitance1)
1)
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
7.5
-
nC
VDD=40V,ID=20A,VGS=0to10V
Gate to drain charge1)
Qgd
-
5.2
7.8
nC
VDD=40V,ID=20A,VGS=0to10V
Switching charge
Qsw
-
8.1
-
nC
VDD=40V,ID=20A,VGS=0to10V
Gate charge total
Qg
-
24
29.5
nC
VDD=40V,ID=20A,VGS=0to10V
Gate plateau voltage
Vplateau
-
4.6
-
V
VDD=40V,ID=20A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
20
-
nC
VDS=0.1V,VGS=0to10V
Output charge1)
Qoss
-
29
38.6
nC
VDD=40V,VGS=0V
1)
1)
2)
Defined by design. Not subject to production test
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.3,2020-10-23
OptiMOSª5Power-Transistor,80V
BSZ075N08NS5
Table7Reversediode
Parameter
Symbol
Diode continous forward current
Diode pulse current
Diode forward voltage
1)
Reverse recovery time
1)
Reverse recovery charge
1)
Values
Unit
Note/TestCondition
58
A
TC=25°C
-
292
A
TC=25°C
-
0.85
1.2
V
VGS=0V,IF=20A,Tj=25°C
trr
-
37
74
ns
VR=40V,IF=20A,diF/dt=100A/µs
Qrr
-
39
78
nC
VR=40V,IF=20A,diF/dt=100A/µs
Min.
Typ.
Max.
IS
-
-
IS,pulse
-
VSD
Defined by design. Not subject to production test
Final Data Sheet
5
Rev.2.3,2020-10-23
OptiMOSª5Power-Transistor,80V
BSZ075N08NS5
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
80
80
70
60
60
ID[A]
Ptot[W]
50
40
40
30
20
20
10
0
0
25
50
75
100
125
150
0
175
0
25
50
75
TC[°C]
100
125
150
175
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
1 µs
2
10
10 µs
ZthJC[K/W]
ID[A]
100
100 µs
101
DC
1 ms
10 ms
0.5
0.2
0.1
0.05
0.02
0.01
10-1
single pulse
0
10
10-1
10-1
100
101
102
10-2
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.3,2020-10-23
OptiMOSª5Power-Transistor,80V
BSZ075N08NS5
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
160
15
10 V
7V
5V
5.5 V
12
120
6V
80
5.5 V
40
0
RDS(on)[mΩ]
ID[A]
6V
5V
0
1
2
3
4
9
7V
10 V
6
3
0
5
0
20
40
VDS[V]
60
80
100
80
100
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
160
100
80
120
gfs[S]
ID[A]
60
80
40
40
20
25 °C
150 °C
0
0
2
4
6
8
0
0
VGS[V]
40
60
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
20
gfs=f(ID);Tj=25°C
7
Rev.2.3,2020-10-23
OptiMOSª5Power-Transistor,80V
BSZ075N08NS5
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
15
4.0
3.5
12
360 µA
3.0
36 µA
2.5
max
VGS(th)[V]
RDS(on)[mΩ]
9
typ
6
2.0
1.5
1.0
3
0.5
0
-60
-20
20
60
100
140
0.0
-60
180
-20
20
60
Tj[°C]
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=20A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;parameter:ID
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
25 °C
25 °C, max
150 °C
150 °C, max
Ciss
103
102
IF[A]
C[pF]
Coss
102
101
Crss
101
0
20
40
60
80
100
0.0
0.5
VDS[V]
1.5
2.0
2.5
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
1.0
IF=f(VSD);parameter:Tj
8
Rev.2.3,2020-10-23
OptiMOSª5Power-Transistor,80V
BSZ075N08NS5
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
2
10
12
40 V
10
20 V
60 V
25 °C
VGS[V]
IAV[A]
8
1
10
6
100 °C
4
125 °C
2
100
100
101
102
103
tAV[µs]
0
0
5
10
15
20
25
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=20Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Diagram Gate charge waveforms
90
VBR(DSS)[V]
80
70
60
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.3,2020-10-23
OptiMOSª5Power-Transistor,80V
BSZ075N08NS5
5PackageOutlines
PACKAGE - GROUP
NUMBER:
REVISION: 03
DIMENSIONS
A
b
c
D
D1
D2
E
E1
E2
e
L
L1
L2
aaa
PG-TSDSON-8-U03
DATE: 20.10.2020
MILLIMETERS
MIN.
MAX.
0.90
1.10
0.24
0.44
(0.20)
3.20
3.40
2.19
2.39
1.54
1.74
3.20
3.40
2.01
2.21
0.10
0.30
0.65
0.30
0.50
0.40
0.60
0.50
0.70
0.06
Figure1OutlinePG-TSDSON-8FL,dimensionsinmm
Final Data Sheet
10
Rev.2.3,2020-10-23
OptiMOSª5Power-Transistor,80V
BSZ075N08NS5
RevisionHistory
BSZ075N08NS5
Revision:2020-10-23,Rev.2.3
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.1
2014-05-05
Release of Final Version
2.2
2020-08-14
Update current rating and footnotes
2.3
2020-10-23
Update package drawing
Trademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
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Publishedby
InfineonTechnologiesAG
81726München,Germany
©2020InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
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(“Beschaffenheitsgarantie”).
Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe
product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation
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informationgiveninthisdocumentwithrespecttosuchapplication.
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Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
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Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
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intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
11
Rev.2.3,2020-10-23
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