BSZ088N03MSGATMA1

BSZ088N03MSG MOSFET OptiMOSª3M-SeriesPower-MOSFET,30V S3O8 Features •Optimizedfor5Vdriverapplication(Notebook,VGA,POL) •LowFOMSWforHighFrequencySMPS •100%avalanchetested •N-channel •Verylowon-resistanceRDS(on)@VGS=4.5V •ExcellentgatechargexRDS(on)product(FOM) •QualifiedaccordingtoJEDEC1)fortargetapplications •Superiorthermalresistance •Pb-freeplating;RoHScompliant •HalogenfreeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters S1 8D S2 7D Parameter Value Unit S3 6D VDS 30 V G4 5D RDS(on),max,VGS=10V 8 mΩ RDS(on),max,VGS=4.5V 9.7 mΩ ID 50 A Type/OrderingCode Package Marking RelatedLinks BSZ088N03MS G PG-TSDSON-8 088N03M - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.1,2020-07-27 OptiMOSª3M-SeriesPower-MOSFET,30V BSZ088N03MSG TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.1,2020-07-27 OptiMOSª3M-SeriesPower-MOSFET,30V BSZ088N03MSG 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 50 32 45 29 11 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=4.5V,TA=25°C,RthJA=60K/W2) - 200 A TC=25°C - - 20 A TC=25°C EAS - - 25 mJ ID=20A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 35 2.1 W TC=25°C TA=25°C,RthJA=60K/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse Continuous drain current1) Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Device on PCB, 6 cm2 cooling area2) Values Min. Typ. Max. RthJC - - 3.6 K/W - RthJA - - 60 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.1,2020-07-27 OptiMOSª3M-SeriesPower-MOSFET,30V BSZ088N03MSG 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA - 2 V VDS=VGS,ID=250µA - 0.1 10 1 100 µA VDS=30V,VGS=0V,Tj=25°C VDS=30V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=16V,VDS=0V Drain-source on-state resistance RDS(on) - 8.2 6.7 9.7 8.0 mΩ VGS=4.5V,ID=20A VGS=10V,ID=20A Gate resistance RG 0.5 1 1.8 Ω - Transconductance gfs 28 57 - S |VDS|>2|ID|RDS(on)max,ID=30A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 30 - Gate threshold voltage VGS(th) 1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 1600 2100 pF VGS=0V,VDS=15V,f=1MHz Output capacitance1) Coss - 510 680 pF VGS=0V,VDS=15V,f=1MHz Reverse transfer capacitance Crss - 33 - pF VGS=0V,VDS=15V,f=1MHz Turn-on delay time td(on) - 4.3 - ns VDD=15V,VGS=10V,ID=30A, RG=1.6Ω Rise time tr - 3.0 - ns VDD=15V,VGS=10V,ID=30A, RG=1.6Ω Turn-off delay time td(off) - 18 - ns VDD=15V,VGS=10V,ID=30A, RG=1.6Ω Fall time tf - 2.4 - ns VDD=15V,VGS=10V,ID=30A, RG=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge1) Gate charge at threshold1) Values Min. Typ. Max. Qgs - 5.0 6.7 nC VDD=15V,ID=30A,VGS=0to4.5V Qg(th) - 2.5 3.4 nC VDD=15V,ID=30A,VGS=0to4.5V Qgd - 2.3 3.8 nC VDD=15V,ID=30A,VGS=0to4.5V 1) Qsw - 4.8 7.2 nC VDD=15V,ID=30A,VGS=0to4.5V 1) Gate charge total Qg - 9.9 13 nC VDD=15V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau - 3.2 - V VDD=15V,ID=30A,VGS=0to4.5V Qg - 21 27 - VDD=15V,ID=30A,VGS=0to10V Qg(sync) - 8.6 11 nC VDS=0.1V,VGS=0to4.5V Qoss - 13 18 - VDD=15V,VGS=0V 1) Gate to drain charge Switching charge Gate charge total1) 1) Gate charge total, sync. FET 1) Output charge 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.1,2020-07-27 OptiMOSª3M-SeriesPower-MOSFET,30V BSZ088N03MSG Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery charge 1) Values Unit Note/TestCondition 31 A TC=25°C - 200 A TC=25°C - 0.87 1.1 V VGS=0V,IF=20A,Tj=25°C - - 10 nC VR=15V,IF=IS,diF/dt=400A/µs Min. Typ. Max. IS - - IS,pulse - VSD Qrr Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.1,2020-07-27 OptiMOSª3M-SeriesPower-MOSFET,30V BSZ088N03MSG 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 40 60 50 30 10 V 40 ID[A] Ptot[W] 4.5 V 20 30 20 10 10 0 0 40 80 120 0 160 0 20 40 60 TC[°C] 80 100 120 140 160 TC[°C] Ptot=f(TC) ID=f(TC);parameter:VGS Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 10 µs ID[A] 1 ms 101 0.5 100 100 µs ZthJC[K/W] 102 10 ms DC 0.2 0.1 0.05 0.02 10-1 0.01 0 10 10-1 single pulse 10-1 100 101 102 10-2 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.1,2020-07-27 OptiMOSª3M-SeriesPower-MOSFET,30V BSZ088N03MSG Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 160 16 5V 10 V 14 4.5 V 120 12 100 10 RDS(on)[mΩ] ID[A] 140 4V 80 60 3V 3.2 V 3.5 V 4V 4.5 V 8 5V 6V 10 V 6 3.5 V 40 4 3.2 V 20 2 3V 2.8 V 0 0 1 2 0 3 0 10 20 VDS[V] 30 40 50 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 160 120 140 100 120 80 gfs[S] ID[A] 100 25 °C 80 150 °C 60 60 40 40 20 20 0 0 1 2 3 4 5 0 0 VGS[V] 80 120 160 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 7 Rev.2.1,2020-07-27 OptiMOSª3M-SeriesPower-MOSFET,30V BSZ088N03MSG Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 16 2.5 14 2.0 12 1.5 VGS(th)[V] RDS(on)[mΩ] 10 98 % 8 typ 6 1.0 4 0.5 2 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=20A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=250µA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 150 °C 150 °C, max Ciss 3 102 10 IF[A] C[pF] Coss 102 101 Crss 101 0 10 20 30 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.1,2020-07-27 OptiMOSª3M-SeriesPower-MOSFET,30V BSZ088N03MSG Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 15 V 10 6V 24 V 101 125 °C VGS[V] IAV[A] 8 25 °C 100 °C 6 4 2 100 100 101 102 103 tAV[µs] 0 0 4 8 12 16 20 24 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 34 32 VBR(DSS)[V] 30 28 26 24 22 20 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.1,2020-07-27 OptiMOSª3M-SeriesPower-MOSFET,30V BSZ088N03MSG 5PackageOutlines Figure1OutlinePG-TSDSON-8,dimensionsinmm/inches Final Data Sheet 10 Rev.2.1,2020-07-27 OptiMOSª3M-SeriesPower-MOSFET,30V BSZ088N03MSG RevisionHistory BSZ088N03MS G Revision:2020-07-27,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2020-07-27 Update current rating and footnotes Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2020InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.1,2020-07-27