BSZ0901NSIATMA1

BSZ0901NSI MOSFET OptiMOSTMPower-MOSFET,30V TSDSON-8FL(S3O8) Features •OptimizedSyncFETforhighperformancebuckconverter •IntegratedmonolithicSchottky-likediode •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 2.1 mΩ ID 142 A QOSS 28 nC QG(0V..10V) 41 nC S1 8D S2 7D S3 6D G4 5D Type/OrderingCode Package Marking RelatedLinks BSZ0901NSI PG-TSDSON-8 FL 0901NSI - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.4,2020-11-13 OptiMOSTMPower-MOSFET,30V BSZ0901NSI TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.4,2020-11-13 OptiMOSTMPower-MOSFET,30V BSZ0901NSI 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 142 90 123 78 25 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=60K/W2) - 568 A TC=25°C - - 20 A TC=25°C EAS - - 80 mJ ID=20A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 69 2.1 W TC=25°C TA=25°C,RthJA=60K/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse Continuous drain current1) Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Device on PCB, 6 cm2 cooling area2) Values Min. Typ. Max. RthJC - - 1.8 K/W - RthJA - - 60 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.4,2020-11-13 OptiMOSTMPower-MOSFET,30V BSZ0901NSI 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage V(BR)DSS Breakdown voltage temperature coefficient Values Unit Note/TestCondition - V VGS=0V,ID=10mA 15 - mV/K ID=10mA,referencedto25°C 1.2 - 2 V VDS=VGS,ID=250µA IDSS - 3 0.5 - mA VDS=24V,VGS=0V VDS=24V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 2.2 1.8 2.8 2.1 mΩ VGS=4.5V,ID=20A VGS=10V,ID=20A Gate resistance RG 0.4 0.8 1.6 Ω - Transconductance gfs 50 100 - S |VDS|>2|ID|RDS(on)max,ID=20A Unit Note/TestCondition Min. Typ. Max. 30 - dV(BR)DSS/dTj - Gate threshold voltage VGS(th) Zero gate voltage drain current Table5Dynamiccharacteristics Parameter Symbol Values Min. Typ. Max. Ciss - 2600 3458 pF VGS=0V,VDS=15V,f=1MHz Output capacitance Coss - 1000 1330 pF VGS=0V,VDS=15V,f=1MHz Reverse transfer capacitance Crss - 140 - pF VGS=0V,VDS=15V,f=1MHz Turn-on delay time td(on) - 5.0 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Rise time tr - 7.2 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Turn-off delay time td(off) - 27 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Fall time tf - 4.6 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Input capacitance1) 1) 1) Defined by design. Not subject to production test Final Data Sheet 4 Rev.2.4,2020-11-13 OptiMOSTMPower-MOSFET,30V BSZ0901NSI Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge2) Values Unit Note/TestCondition 8.4 nC VDD=15V,ID=30A,VGS=0to4.5V 4.1 - nC VDD=15V,ID=30A,VGS=0to4.5V - 6.5 8.5 nC VDD=15V,ID=30A,VGS=0to4.5V Qsw - 8.8 - nC VDD=15V,ID=30A,VGS=0to4.5V Gate charge total Qg - 20 27 nC VDD=15V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.5 - V VDD=15V,ID=30A,VGS=0to4.5V Gate charge total Qg - 41 55 nC VDD=15V,ID=30A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 16 - nC VDS=0.1V,VGS=0to4.5V Qoss - 28 37 nC VDD=15V,VGS=0V Unit Note/TestCondition Min. Typ. Max. Qgs - 6.3 Gate charge at threshold Qg(th) - Gate to drain charge2) Qgd Switching charge 2) 2) 2) Output charge Table7Reversediode Parameter Symbol Diode continuous forward current Values Min. Typ. Max. IS - - 69 A TC=25°C Diode pulse current IS,pulse - - 568 A TC=25°C Diode forward voltage VSD - 0.55 0.7 V VGS=0V,IF=7A,Tj=25°C Reverse recovery charge Qrr - 2 - nC VR=15V,IF=IS,diF/dt=400A/µs 1) 2) See ″Gate charge waveforms″ for parameter definition Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.4,2020-11-13 OptiMOSTMPower-MOSFET,30V BSZ0901NSI 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 80 150 70 125 60 100 ID[A] Ptot[W] 50 40 75 30 50 20 25 10 0 0 40 80 120 0 160 0 20 40 60 TC[°C] 80 100 120 140 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 102 100 10 µs 0.5 100 µs 0.2 101 ZthJC[K/W] ID[A] 1 ms 10 ms DC 0.1 0.05 10-1 0.02 0.01 single pulse 100 10-1 10-1 10-2 100 101 102 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.4,2020-11-13 OptiMOSTMPower-MOSFET,30V BSZ0901NSI Diagram5:Typ.outputcharacteristics 160 10 V 140 Diagram6:Typ.drain-sourceonresistance 4 3.5 V 3.2 V 4.5 V 120 3 3V 3.2 V 3.5 V RDS(on)[mΩ] ID[A] 100 80 2.8 V 60 40 4V 4.5 V 5V 2 7V 8V 10 V 1 20 0 0 1 2 0 3 0 10 20 VDS[V] 30 40 50 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 160 280 140 240 120 200 100 gfs[S] ID[A] 160 80 120 60 80 40 150 °C 25 °C 20 0 0 1 2 3 40 4 5 0 0 VGS[V] 80 120 160 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 7 Rev.2.4,2020-11-13 OptiMOSTMPower-MOSFET,30V BSZ0901NSI Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 4 2.5 2.0 3 2 VGS(th)[V] RDS(on)[mΩ] 1.5 typ 1.0 1 0.5 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=20A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=10mA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 -55 °C 25 °C 125 °C 150 °C Ciss 102 Coss IF[A] C[pF] 103 101 Crss 102 100 101 0 10 20 30 10-1 0.0 0.2 VDS[V] 0.6 0.8 1.0 1.2 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.4 IF=f(VSD);parameter:Tj 8 Rev.2.4,2020-11-13 OptiMOSTMPower-MOSFET,30V BSZ0901NSI Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 15 V 10 6V 24 V 25 °C 101 8 100 °C IAV[A] VGS[V] 125 °C 100 6 4 2 10-1 100 101 102 103 tAV[µs] 0 0 10 20 30 40 50 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Drain-sourceleakagecurrent Diagram Gate charge waveforms -2 10 10-3 IDSS[A] 125 °C 100 °C 10-4 75 °C 10-5 25 °C 10-6 0 5 10 15 20 25 VDS[V] IDSS=f(VDS);VGS=0V;parameter:Tj Final Data Sheet 9 Rev.2.4,2020-11-13 OptiMOSTMPower-MOSFET,30V BSZ0901NSI 5PackageOutlines PACKAGE - GROUP NUMBER: REVISION: 03 DIMENSIONS A b c D D1 D2 E E1 E2 e L L1 L2 aaa PG-TSDSON-8-U03 DATE: 20.10.2020 MILLIMETERS MIN. MAX. 0.90 1.10 0.24 0.44 (0.20) 3.20 3.40 2.19 2.39 1.54 1.74 3.20 3.40 2.01 2.21 0.10 0.30 0.65 0.30 0.50 0.40 0.60 0.50 0.70 0.06 Figure1OutlinePG-TSDSON-8FL,dimensionsinmm Final Data Sheet 10 Rev.2.4,2020-11-13 OptiMOSTMPower-MOSFET,30V BSZ0901NSI RevisionHistory BSZ0901NSI Revision:2020-11-13,Rev.2.4 Previous Revision Revision Date Subjects (major changes since last revision) 2.3 2020-08-11 Update current rating and footnotes 2.4 2020-11-13 Update package drawing Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2020InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.4,2020-11-13