BSZ096N10LS5

BSZ096N10LS5 MOSFET OptiMOSTM5Power-Transistor,100V TSDSON-8FL(S3O8) Features •Idealforhighfrequencyswitching •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •N-channel,Logiclevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 9.6 mΩ ID 62 A QOSS 30 nC QG(0V...4.5V) 12 nC S1 8D S2 7D S3 6D G4 5D Type/OrderingCode Package Marking RelatedLinks BSZ096N10LS5 PG-TSDSON-8 FL 096N10L - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.3,2020-12-22 OptiMOSTM5Power-Transistor,100V BSZ096N10LS5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.3,2020-12-22 OptiMOSTM5Power-Transistor,100V BSZ096N10LS5 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 62 39 11 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C,RthJA=60K/W2) - 248 A TC=25°C - - 82 mJ ID=20A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 69 2.1 W TC=25°C TA=25°C,RthJA=60K/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current3) ID,pulse - Avalanche energy, single pulse4) EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - 1.1 1.8 K/W - Device on PCB, minimal footprint RthJA - - 62 K/W - Device on PCB, 6 cm2 cooling area2) RthJA - - 60 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) >See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.3,2020-12-22 OptiMOSTM5Power-Transistor,100V BSZ096N10LS5 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 1.7 2.3 V VDS=VGS,ID=36µA - 0.1 10 1 100 µA VDS=100V,VGS=0V,Tj=25°C VDS=100V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 10.5 8.2 13.5 9.6 mΩ VGS=4.5V,ID=10A VGS=10V,ID=20A Gate resistance1) RG - 1.2 1.8 Ω - Transconductance gfs 22 44 - S |VDS|>2|ID|RDS(on)max,ID=20A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 100 - Gate threshold voltage VGS(th) 1.1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 1600 2100 pF VGS=0V,VDS=50V,f=1MHz Coss - 250 320 pF VGS=0V,VDS=50V,f=1MHz Reverse transfer capacitance Crss - 12 21 pF VGS=0V,VDS=50V,f=1MHz Turn-on delay time td(on) - 5.7 - ns VDD=50V,VGS=10V,ID=20A, RG,ext=3Ω Rise time tr - 4.6 - ns VDD=50V,VGS=10V,ID=20A, RG,ext=3Ω Turn-off delay time td(off) - 21 - ns VDD=50V,VGS=10V,ID=20A, RG,ext=3Ω Fall time tf - 5.3 - ns VDD=50V,VGS=10V,ID=20A, RG,ext=3Ω Unit Note/TestCondition Output capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 4.7 - nC VDD=50V,ID=20A,VGS=0to4.5V Qg(th) - 2.5 - nC VDD=50V,ID=20A,VGS=0to4.5V Gate to drain charge Qgd - 4.1 6.1 nC VDD=50V,ID=20A,VGS=0to4.5V Switching charge Qsw - 6.3 - nC VDD=50V,ID=20A,VGS=0to4.5V Gate charge total Qg - 12 15 nC VDD=50V,ID=20A,VGS=0to4.5V Gate plateau voltage Vplateau - 3.0 - V VDD=50V,ID=20A,VGS=0to4.5V Gate charge total Qg - 22 - nC VDD=50V,ID=20A,VGS=0to10V Qoss - 30 40 nC VDD=50V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.3,2020-12-22 OptiMOSTM5Power-Transistor,100V BSZ096N10LS5 Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 58 A TC=25°C - 248 A TC=25°C - 0.85 1.2 V VGS=0V,IF=20A,Tj=25°C trr - 34 68 ns VR=50V,IF=20A,diF/dt=100A/µs Qrr - 29 58 nC VR=50V,IF=20A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.3,2020-12-22 OptiMOSTM5Power-Transistor,100V BSZ096N10LS5 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 80 70 70 60 60 50 40 ID[A] Ptot[W] 50 40 30 30 20 20 10 10 0 0 25 50 75 100 125 150 0 175 0 20 40 60 TC[°C] 80 100 120 140 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 102 10 µs 100 DC ID[A] 10 0.5 100 µs ZthJC[K/W] 1 1 ms 100 10 ms 0.2 0.1 10-1 0.05 0.02 -1 10 0.01 single pulse 10-2 10-1 100 101 102 103 10-2 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.3,2020-12-22 OptiMOSTM5Power-Transistor,100V BSZ096N10LS5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 160 20 10 V 5V 140 6V 16 4.5 V 120 4V 4.5 V 80 RDS(on)[mΩ] ID[A] 100 4V 60 40 12 5V 5.5 V 6V 8 7V 10 V 3.5 V 4 20 3V 0 0 1 2 3 4 0 5 0 20 40 VDS[V] 60 80 100 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 100 80 70 80 60 50 ID[A] gfs[S] 60 40 40 30 20 20 10 150 °C 25 °C 0 0 1 2 3 4 5 6 7 0 0 10 VGS[V] 30 40 50 60 70 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 7 Rev.2.3,2020-12-22 OptiMOSTM5Power-Transistor,100V BSZ096N10LS5 Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 20 2.5 2.0 15 36 µA 1.5 max VGS(th)[V] RDS(on)[mΩ] 360 µA 10 Typ 1.0 5 0.5 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=20A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 150 °C 150 °C, max Ciss 103 102 IF[A] C[pF] Coss 102 101 Crss 101 100 0 25 50 75 100 100 0.00 0.25 VDS[V] 0.75 1.00 1.25 1.50 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.50 IF=f(VSD);parameter:Tj 8 Rev.2.3,2020-12-22 OptiMOSTM5Power-Transistor,100V BSZ096N10LS5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 9 8 50 V 7 101 25 °C 100 °C 125 °C VGS[V] IAV[A] 6 80 V 20 V 5 4 3 2 1 100 10-1 100 101 102 103 tAV[µs] 0 0 5 10 15 20 25 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=20Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 110 VBR(DSS)[V] 105 100 95 90 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.3,2020-12-22 OptiMOSTM5Power-Transistor,100V BSZ096N10LS5 5PackageOutlines PACKAGE - GROUP NUMBER: REVISION: 03 DIMENSIONS A b c D D1 D2 E E1 E2 e L L1 L2 aaa PG-TSDSON-8-U03 DATE: 20.10.2020 MILLIMETERS MIN. MAX. 0.90 1.10 0.24 0.44 (0.20) 3.20 3.40 2.19 2.39 1.54 1.74 3.20 3.40 2.01 2.21 0.10 0.30 0.65 0.30 0.50 0.40 0.60 0.50 0.70 0.06 Figure1OutlinePG-TSDSON-8FL,dimensionsinmm Final Data Sheet 10 Rev.2.3,2020-12-22 OptiMOSTM5Power-Transistor,100V BSZ096N10LS5 RevisionHistory BSZ096N10LS5 Revision:2020-12-22,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-03-07 Release of final version 2.1 2016-04-21 Update Gate threshold voltage 2.2 2020-06-26 Update max current rating 2.3 2020-12-22 Update package drawing Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.3,2020-12-22