BTS410E2E3062ABUMA1

PROFET® BTS410E2 Smart High-Side Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Current limitation Features  Overload protection  Current limitation  Short circuit protection  Thermal shutdown  Overvoltage protection (including load dump)  Fast demagnetization of inductive loads  Reverse battery protection1)  Undervoltage and overvoltage shutdown with auto-restart and hysteresis  Open drain diagnostic output  Open load detection in ON-state  CMOS compatible input  Loss of ground and loss of Vbb protection  Electrostatic discharge (ESD) protection  Green Product (RoHS compliant)  AEC Qualified Vbb(AZ) Vbb(on) RON IL(ISO) IL(SCr) 65 V 4.7 ... 42 V 220 m 1.8 A 5 A PG-TO263-5-2 Application  C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads  All types of resistive, inductive and capacitve loads  Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic  feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. 3 + V bb Voltage Overvoltage Current Gate source protection limit protection V Logic 2 Voltage Charge pump sensor Level shifter Limit for unclamped ind. loads Rectifier IN OUT 5 Temperature sensor Open load ESD 4 Logic Load detection ST Short circuit detection GND  PROFET 1 Signal GND ) 1 Load GND With external current limit (e.g. resistor RGND=150 ) in GND connection, resistors in series with IN and ST connections, reverse load current limited by connected load. Data Sheet 1 2013-10-15 BTS410E2 Pin Symbol Function 1 GND - Logic ground 2 IN I Input, activates the power switch in case of logical high signal 3 Vbb + Positive power supply voltage, the tab is shorted to this pin 4 ST S Diagnostic feedback, low on failure 5 OUT (Load, L) O Output to the load Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V 3) RI = 2 , RL= 6.6 , td= 400 ms, IN= low or high Load current (Short circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC), TC  25 °C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const. IL = 1.8 A, ZL = 2.3 H, 0 : Electrostatic discharge capability (ESD) IN: (Human Body Model) all other pins: Symbol Vbb VLoad dump4) Values 65 100 Unit V V self-limited -40 ...+150 -55 ...+150 50 A °C 4.5 1 2 J kV VIN IIN IST -0.5 ... +6 5.0 5.0 V mA Symbol Values typ max -2.5 -75 35 -- Unit IL Tj Tstg Ptot EAS VESD W acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 6 Thermal Characteristics Parameter and Conditions Thermal resistance ) 2 3) 4) ) 5 chip - case: RthJC junction - ambient (free air): RthJA SMD version, device on PCB5): min ---- K/W Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150  resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the protection of the input is integrated. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. Data Sheet 2 2013-10-15 BTS410E2 Electrical Characteristics Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 1.6 A Tj=25 °C: RON Tj=150 °C: Nominal load current, ISO Norm (pin 3 to 5) VON = 0.5 V, TC = 85 °C Output current (pin 5) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 7, Tj =-40...+150°C Turn-on time IN to 90% VOUT: Turn-off time IN to 10% VOUT: RL = 12 , Tj =-40...+150°C Slew rate on 10 to 30% VOUT, RL = 12 , Tj =-40...+150°C Slew rate off 70 to 40% VOUT, RL = 12 , Tj =-40...+150°C -- 190 220 390 440 m IL(ISO) IL(GNDhigh) 1.6 -- 1.8 -- -1 A mA ton toff 12 5 --- 125 85 s dV /dton -- -- 3 V/s -dV/dtoff -- -- 6 V/s Tj =-40...+150°C: Tj =25°C: Tj =-40...+150°C: Undervoltage restart Tj =-40...+150°C: Undervoltage restart of charge pump see diagram page 13 Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150°C: Overvoltage restart Tj =-40...+150°C: Overvoltage hysteresis Tj =-40...+150°C: 7) Overvoltage protection Tj =-40...+150°C: Ibb=4 mA Standby current (pin 3) Tj=-40...+25°C: VIN=0 Tj= 150°C: Vbb(on) Vbb(under) 4.7 2.9 2.7 --- ----5.6 42 4.5 4.7 4.9 6.0 V V Vbb(under) -- 0.1 -- V Vbb(over) Vbb(o rst) Vbb(over) Vbb(AZ) 42 40 -65 --0.1 70 52 ---- V V V V IL(off) 10 18 -- 15 25 20 A Leakage output current (included in Ibb(off)) VIN=0 ---- Operating Parameters Operating voltage 6) Undervoltage shutdown ) 6 7) Vbb(u rst) Vbb(ucp) Ibb(off) V V A At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V Meassured without load. See also VON(CL) in table of protection functions and circuit diagram page 7. Data Sheet 3 2013-10-15 BTS410E2 Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Operating current (Pin 1)8), VIN=5 V, Tj =-40...+150°C IGND Values min typ max -- 1 2.1 mA 9 -4 -12 -- 23 -15 A -- 5 -- A -- -- 450 s VON(CL) 61 -- 68 -- 73 75 V VON(SC) Tjt Tjt -Vbb -150 --- 8.5 -10 -- ---32 V °C K V 2 -- 150 Protection Functions9) Initial peak short circuit current limit (pin 3 to 5)10), IL(SCp) ( max 450 s if VON > VON(SC) ) Tj =-40°C: Tj =25°C: Tj =+150°C: Repetitive overload shutdown current limit IL(SCr) VON= 8 V, Tj = Tjt (see timing diagrams, page 11) Short circuit shutdown delay after input pos. slope VON > VON(SC), Tj =-40..+150°C: td(SC) min value valid only, if input "low" time exceeds 60 s Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA, Tj =-40..+150°C: IL= 1 A, Tj =-40..+150°C: Short circuit shutdown detection voltage (pin 3 to 5) Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 3 to 1) 11) Diagnostic Characteristics Open load detection current (on-condition) IL (OL) Tj=-40 ..150°C: Unit mA ) ) 8 Add IST, if IST > 0, add IIN, if VIN>5.5 V Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 10) Short circuit current limit for max. duration of td(SC) max=450 s, prior to shutdown 11) Requires 150  resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7). 9 Data Sheet 4 2013-10-15 BTS410E2 Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Values min typ max Input and Status Feedback12) Input turn-on threshold voltage Tj V =-40..+150°C: 1.5 IN(T+) Input turn-off threshold voltage Tj =-40..+150°C: VIN(T-) 1.0 Input threshold hysteresis  VIN(T) -Off state input current (pin 2), VIN = 0.4 V IIN(off) 1 On state input current (pin 2), VIN = 5 V IIN(on) 10 Status invalid after positive input slope td(ST SC) -(short circuit) Tj=-40 ... +150°C: Status invalid after positive input slope td(ST) 300 (open load) Tj=-40 ... +150°C: Status output (open drain) Zener limit voltage Tj =-40...+150°C, IST = +50 uA: VST(high) 5.0 -ST low voltage Tj =-40...+150°C, IST = +1.6 mA: VST(low) 12) Unit --0.5 -25 -- 2.4 --30 70 450 V V V A A s -- 1400 s 6 -- -0.4 V If a ground resistor RGND is used, add the voltage drop across this resistor. Data Sheet 5 2013-10-15 BTS410E2 Truth Table Input- Output level level 412 B2 410 D2 410 E2/F2 410 G2 410 H2 L H L H L H L H L H L H L H L H H H L H H L L H L L L15) L15) L L H H H L H L H 14 H (L )) L L 15 L ) 15) L L L H H H L H L H H (L14)) L L H H H H H H H L H H H H (L14)) L L H H H H H H L H H L L H L L H H H H Normal operation Open load Short circuit to GND Short circuit to Vbb Overtemperature Undervoltage Overvoltage L = "Low" Level H = "High" Level Status 13 ) H L L H H L L L L L L X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 12...13) Terms Status output +5V Ibb 3 I IN Vbb IN 2 IL V V IN VST OUT PROFET I ST 4 R ST(ON) VON ST GND 1 bb R IGND VOUT GND GND R ESDZD ESD-Zener diode: 6 V typ., max 5 mA; RST(ON) < 250  at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). Input circuit (ESD protection) IN ST 5 I ESDZDI1 ZDI2 I I GND ZDI1 6 V typ., ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). ) Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for open load detection. 14) Low resistance short Vbb to output may be detected in ON-state by the no-load-detection 15) No current sink capability during undervoltage shutdown 13 Data Sheet 6 2013-10-15 BTS410E2 Short circuit detection Fault Condition: VON > 8.5 V typ.; IN high Open-load detection ON-state diagnostic condition: VON < RON * IL(OL); IN high + V bb + V bb V ON OUT Short circuit detection Logic unit VON ON OUT Open load detection Logic unit Inductive and overvoltage output clamp + V bb V Z GND disconnect VON OUT GND 3 P R OFE T IN 2 PROFET VON clamped to 68 V typ. Overvolt. and reverse batt. protection V + V bb V bb V IN V OUT 5 ST 4 R IN Vbb GND 1 ST V GND Any kind of load. In case of Input=high is VOUT  VIN - VIN(T+) . Z2 IN Due to VGND >0, no VST = low signal available. Logic R ST GND disconnect with GND pull up ST V 3 P R O FE T Z1 GND 2 R GND IN Vbb PROFET Signal GND VZ1 = 6.2 V typ., VZ2 = 70 V typ., RGND= 150 , RIN, RST= 15 k 4 OUT 5 ST GND 1 V V bb V IN ST V GND Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Data Sheet 7 2013-10-15 BTS410E2 with an approximate solution for RL  0 : Vbb disconnect with energized inductive load EAS= Maximum allowable load inductance for a single switch off 3 high Vbb IN 2 OUT PROFET 4 IL· L IL·RL ·(V + |VOUT(CL)|)· ln (1+ ) 2·RL bb |VOUT(CL)| L = f (IL ); Tj,start = 150°C,TC = 150°C const., Vbb = 12 V, RL = 0  5 L [mH] 10000 ST GND 1 V bb Normal load current can be handled by the PROFET itself. 1000 Vbb disconnect with charged external inductive load high 2 100 S 3 IN Vbb PROFET 4 OUT 5 D ST 10 GND 1 V bb 1 If other external inductive loads L are connected to the PROFET, additional elements like D are necessary. 1 2 3 4 5 6 IL [A] Inductive Load switch-off energy dissipation E bb E AS IN PROFET = ELoad Vbb OUT ST EL GND ZL { L RL ER Energy stored in load inductance: 2 EL = 1/2·L·I L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER=  VON(CL)·iL(t) dt, Data Sheet 8 2013-10-15 BTS410E2 Typ. transient thermal impedance chip case ZthJC = f(tp, D), D=tp/T ZthJC [K/W] 10 1 D= 0.5 0.2 0.1 0.05 0.02 0.01 0 0.1 0.01 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 tp [s] Data Sheet 9 2013-10-15 BTS410E2 Options Overview all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection with 150  in GND connection, protection against loss of ground Type Logic version BTS 412 B2 410D2 410E2 410F2 410G2 410H2 Overtemperature protection with hysteresis Tj >150 °C, latch function16)17) Tj >150 °C, with auto-restart on cooling Short circuit to GND protection B D X X E F G X X X X X X X X X 308 H X switches off when VON>3.5 V typ. and Vbb> 7 V typ16) (when first turned on after approx. 150 s) switches off when VON>8.5 V typ.16) (when first turned on after approx. 150 s) 307 X X X Achieved through overtemperature protection X Open load detection in OFF-state with sensing current 30 A typ. in ON-state with sensing voltage drop across power transistor X X X X X X X X Undervoltage shutdown with auto restart X X X X X X X X Overvoltage shutdown with auto restart ) X X X X X X - X overtemperature X X X X X X X X short circuit to GND X X X X - X X X short to Vbb X -19) 19) -19) -19) X X X open load X X X X X X X X undervoltage X X - - - - X - overvoltage X X - - - - - - X X X X X X X X X X X X X X X X X X X X X X X 18 Status feedback for - Status output type CMOS Open drain Output negative voltage transient limit (fast inductive load switch off) to Vbb - VON(CL) X X X X X X Load current limit high level (can handle loads with high inrush currents) low level (better protection of application) Protection against loss of GND X X X ) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (V OUT  0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 17) With latch function. Reseted by a) Input low, b) Undervoltage 18) No auto restart after overvoltage in case of short circuit 19) Low resistance short Vbb to output may be detected in ON-state by the no-load-detection 16 Data Sheet 10 2013-10-15 BTS410E2 Timing diagrams Figure 2b: Switching an inductive load Figure 1a: Vbb turn on: IN IN t d(bb IN) t V bb ST d(ST) *) V V OUT OUT A IL ST open drain I L(OL) t t A in case of too early VIN=high the device may not turn on (curve A) td(bb IN) approx. 150 s *) if the time constant of load is too large, open-load-status may occur Figure 3a: Turn on into short circuit, Figure 2a: Switching a lamp, IN IN ST ST V V OUT OUT td(SC) I I L t Data Sheet L t 11 2013-10-15 BTS410E2 td(SC) approx. -- s if Vbb - VOUT > 8.5 V typ. Figure 4a: Overtemperature: Reset if Tj