IDB15E60ATMA1

IDB15E60 Fast Switching Switching EmCon Emitter Diode Controlled Diode Product Summary Feature VRRM 600 V IF 15 A VF 1.5 V T jmax 175 °C 600VV Emitter • 600 EmConControlled technologytechnology • Fast recovery 2 • Soft switching • Low reverse recovery charge 1 • Low forward voltage 3 • 175°C operating temperature PG-TO263-3 • Easy paralleling * RoHS compliant Type Package IDB15E60 PG-TO263-3 Ordering Code - Marking Pin 1 PIN 2 PIN 3 D15E60 NC C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Parameter Symbol Symbol Repetitive peak reverse voltage Repetitive peak reverse voltage VRRM VRRM Continousforward forward current Continuous current TTCC==25°C 25C TTC ==90°C 90C IF Value Value 600 600 Unit Unit VV A A IF 29.2 29.2 19.6 19.6 Surge non repetitive forward current Surge non repetitive forward current TC = 25C, tp = 10 ms, sine halfwave I FSM IFSM 6060 A Maximum repetitive forward current repetitive forward current TMaximum C = 25C, tp limited by tj,max, D = 0.5 IFRM I FRM 4545 A TC=25°C, tp limited by Tjmax, D=0.5 Power dissipation Power TC = 25Cdissipation TTCC==25°C 90C PtotP t o t 83.3 47.2 83.3 C TC=25°C, tp=10 ms, sine halfwave Tj Operating TC=90°C junction temperature Tstg Tj , T stg TS T Storage temperature Operating and storage temperature Soldering temperature Soldering temperature 1.6mm (0.063 in.)MSL1 from case for 10 s reflow soldering, Rev.2.4 S Page 1 WW -40…+175 47.2 -55...+150 -55...+175 260 260 °C°C °C 2013-12-05 200903-04 IDB15E60 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 1.8 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 cooling area 1) - 35 - K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Reverse leakage current IR µA V R=600V, Tj=25°C - - 50 V R=600V, Tj=150°C - - 1250 Forward voltage drop VF V IF=15A, T j=25°C - 1.5 2 IF=15A, T j=150°C - 1.5 - 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.4 Page 2 2013-12-05 2009-03-04 IDB15E60 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Values min. typ. Unit max. Dynamic Characteristics Reverse recovery time ns t rr V R=400V, IF=15A, diF/dt=1000A/µs, Tj=25°C - 87 - V R=400V, IF=15A, diF/dt=1000A/µs, Tj=125°C - 124 - V R=400V, IF=15A, diF/dt=1000A/µs, Tj=150°C - 131 - Peak reverse current A I rrm V R=400V, IF = 15A, diF/dt=1000A/µs, Tj =25°C - 13.7 - V R=400V, IF =15A, diF/dt=1000A/µs, T j=125°C - 16.4 - V R=400V, IF =15A, diF/dt=1000A/µs, T j=150°C - 19.3 - Reverse recovery charge nC Q rr V R=400V, IF=15A, diF/dt=1000A/µs, Tj=25°C - 595 - V R=400V, IF =15A, diF/dt=1000A/µs, T j=125°C - 995 - V R=400V, IF =15A, diF/dt=1000A/µs, T j=150°C - 1104 - V R=400V, IF=15A, diF/dt=1000A/µs, Tj=25°C - 3.6 - V R=400V, IF=15A, diF/dt=1000A/µs, Tj=125°C - 4.3 - V R=400V, IF=15A, diF/dt=1000A/µs, Tj=150°C - 4.5 - Reverse recovery softness factor Rev.2.4 S Page 3 2013-12-05 2009-03-04 IDB15E60 1 Power dissipation 2 Diode forward current Ptot = f (TC) IF = f(TC) parameter: Tj ≤ 175 °C parameter: Tj≤ 175°C 90 30 W A 60 20 IF P tot 70 50 15 40 30 10 20 5 10 0 25 50 75 100 125 0 25 175 °C 50 75 100 125 TC 175 °C TC 3 Typ. diode forward current 4 Typ. diode forward voltage IF = f (VF) VF = f (Tj) 50 2 V 30A A 1.8 VF IF 1.7 30 20 -55°C 25°C 100°C 150°C 1.6 1.5 15A 1.4 1.3 7.5A 10 1.2 1.1 0 0.5 1 1.5 1 -60 2.5 V VF Rev.2.4 Page 4 -20 20 60 100 160 °C Tj 2013-12-05 2009-03-04 IDB15E60 5 Typ. reverse recovery time 6 Typ. reverse recovery charge trr = f (diF/dt) Qrr =f(diF/dt) parameter: V R = 400V, T j = 125°C parameter: VR = 400V, Tj = 125 °C 500 1450 ns nC 400 30A 1250 30A 15A 7.5A 300 Qrr trr 350 1150 15A 1050 250 950 200 850 150 7.5A 750 100 650 50 0 200 300 400 500 600 700 800 550 200 A/µs 1000 di F/dt 300 400 500 600 700 800 A/µs 1000 diF/dt 7 Typ. reverse recovery current 8 Typ. reverse recovery softness factor Irr = f (diF/dt) S = f(diF /dt) parameter: V R = 400V, T j = 125°C parameter: VR = 400V, Tj = 125°C 11 18 A 16 30A 15A 7.5A 15 9 13 S Irr 14 8 30A 12 7 11 15A 10 6 9 8 7,5A 5 7 6 4 5 4 200 Rev.2.4 300 400 500 600 700 800 3 200 A/µs 1000 di F/dt Page 5 300 400 500 600 700 800 A/µs 1000 diF/dt 2013-12-05 2009-03-04 IDB15E60 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T 10 1 IDP15E60 K/W ZthJC 10 0 10 -1 D = 0.50 0.20 0.10 0.05 10 -2 0.02 0.01 single pulse 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Rev.2.4 Page 6 2013-12-05 2009-03-04 IDB15E60 Rev.2.4 Page 7 2013-12-05 2009-03-04 IDB15E60 Published by Infineon Technologies AG, 81726 München © 2009 Infineon Technologies AG Published by All Rights Reserved. Infineon Technologies AG Attention please!Germany 81726 Munich, The information is given to describe certain components and shall not be considered as warranted © 2013 Infineonherein Technologies AG characteristics. All Rights Reserved. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, Legal Disclaimer regarding circuits, descriptions and charts stated herein. The information given in this document shall in no event be regarded as a guarantee of conditions or Infineon Technologies is an approved manufacturer. characteristics. With respect to any CECC examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all Information warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual For further information on technology, delivery terms and conditions and prices please contact your nearest property rights of any third party. Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Information Warnings For information on technology, termsdangerous and conditions and prices, please contact the nearest Duefurther to technical requirements componentsdelivery may contain substances. For information on the types in (www.infineon.com). question please contact your nearest Infineon Technologies Office. Infineon Technologies Office Infineon Technologies Components may only be used in life-support devices or systems with the express Warnings written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device Due to technical requirements, may contain dangerous substances. Fororinformation or system Life support devices or components systems are intended to be implanted in the human body, to support on the types in question, please contact the nearest Infineon Technologies Office. and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health The Infineon Technologies component described in this Data Sheet may be used in life-support devices or of the user or other persons may be endangered. systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.4 Page 8 2013-12-05 2009-03-04