IGD06N60TATMA1

TRENCHSTOP™ Series Low Loss IGBT: IGD06N60T q IGBT in TRENCHSTOP™ and Fieldstop technology Features:  Very low VCE(sat) 1.5 V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior  Low EMI  Qualified according to JEDEC1 for target applications  Pb-free lead plating; RoHS compliant  Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ C G E PG-TO252-3 (D-PAK) Applications:  Variable Speed Drive for washing machines and air conditioners  Buck converters Type IGD06N60T VCE IC;Tc=100°C VCE(sat),Tj=25°C 600V 6A 1.5V Tj,max Marking Package 175C G06T60 PG-TO252-3 Maximum Ratings Parameter Symbol Collector-emitter voltage, Tj ≥ 25C VCE 600 DC collector current, limited by Tjmax TC = 25C TC = 100C IC 12 6 Pulsed collector current, tp limited by Tjmax ICpul s 18 Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs - 18 Gate-emitter voltage VGE 20 V tSC 5 s Power dissipation TC = 25C Ptot 88 W Operating junction temperature Tj -40...+175 Storage temperature Tstg -55...+150 Short circuit withstand time Soldering temperature reflow soldering, MSL1 2) Unit V A 2) VGE = 15V, VCC  400V, Tj  150C 1 Value C 260 J-STD-020 and JESD-022 Allowed number of short circuits: 1s. IFAG IPC TD VLS 1 Rev. 2.2, 20.09.2013 TRENCHSTOP™ Series IGD06N60T q Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 1.7 K/W RthJA 62 Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. 600 - - T j =2 5 C - 1.5 2.05 T j =1 7 5 C - 1.8 4.1 4.6 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 0. 25m A Collector-emitter saturation voltage VCE(sat) Gate-emitter threshold voltage VGE(th) V V G E = 15 V , I C = 6 A I C = 0. 18m A , 5.7 VCE=VGE Zero gate voltage collector current ICES V C E = 60 0 V , V G E = 0V µA T j =2 5 C - - 40 T j =1 7 5 C - - 700 Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA Transconductance gfs V C E = 20 V , I C = 6 A - 3.6 - S Integrated gate resistor RGint Ω none Dynamic Characteristic Input capacitance Ciss V C E = 25 V , - 368 - Output capacitance Coss V G E = 0V , - 28 - Reverse transfer capacitance Crss f= 1 MH z - 11 - Gate charge QGate V C C = 48 0 V, I C =6 A - 42 - nC - 7 - nH - 55 - A pF V G E = 15 V LE Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) 1) IC(SC) V G E = 15 V ,t S C  5 s V C C = 4 0 0 V, T j = 25  C Allowed number of short circuits: 1s. IFAG IPC TD VLS 2 Rev. 2.2, 20.09.2013 TRENCHSTOP™ Series IGD06N60T q Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value min. typ. max. - 9 - - 6 - - 130 - - 58 - - 0.09 - - 0.11 - - 0.2 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j=25 C, VCC=400V,IC=6A, VGE=0/15V,rG=23, L =60nH, C=40pF L , C f rom Fig. E Energy losses include “tail” and diode reverse recovery. Diode used IDP06E60 ns mJ Switching Characteristic, Inductive Load, at Tj=175 C Parameter Symbol Conditions Value min. typ. max. - 9 - - 8 - - 165 - - 84 - - 0.14 - - 0.18 - - 0.335 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets IFAG IPC TD VLS T j=175 C, VCC=400V,IC=6A, VGE=0/15V,rG= 23 L =60nH, C=40pF L , C f rom Fig. E Energy losses include “tail” and diode reverse recovery. Diode used IDP06E60 3 ns mJ Rev. 2.2, 20.09.2013 TRENCHSTOP™ Series IGD06N60T q t p =1µs 10A 15A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 18A T C =80°C 12A T C =110°C 9A 6A Ic 3A Ic 5µs 10µs 50µs 1A 500µs 5ms DC 0A 100Hz 1kHz 10kHz 0,1A 1V 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj  175C, D = 0.5, VCE = 400V, VGE = 0/15V, rG = 23) 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C;VGE=0/15V) 80W 15A IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 10V 60W 40W 10A 5A 20W 0W 25°C 50°C 75°C 0A 25°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj  175C) IFAG IPC TD VLS 4 75°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE  15V, Tj  175C) Rev. 2.2, 20.09.2013 TRENCHSTOP™ Series 15A 15A 12A V G E =20V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT V G E =20V 15V 13V 11V 9A 9V 7V 6A 3A 12A 15V 13V 11V 9A 9V 7V 6A 3A 0A 0A 0V 1V 2V 3V 0V 15A 12A 9A 6A T J =175°C 3A 25°C 0A 0V 2V 4V 6V 8V 10V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) IFAG IPC TD VLS 1V 2V 3V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT IGD06N60T q IC =12A 2,5V 2,0V I C =6A 1,5V 1,0V IC =3A 0,5V 0,0V -50°C 0°C 50°C 100°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.2, 20.09.2013 TRENCHSTOP™ Series IGD06N60T q t d(off) td(off) 100ns t, SWITCHING TIMES t, SWITCHING TIMES tf 100ns t d(on) 10ns tf td(on) tr 10ns tr 1ns 0A 3A 6A 9A 12A 1ns  15A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, rG = 23Ω, Dynamic test circuit in Figure E) VGE(th), GATE-EMITT TRSHOLD VOLTAGE t, SWITCHING TIMES tf td(on) 10ns tr 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 6A, rG = 23Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS    RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, IC = 6A, Dynamic test circuit in Figure E) 100ns td(off) 1ns  6V 5V m ax. 4V typ. 3V m in. 2V 1V 0V -50°C 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.18mA) 6 Rev. 2.2, 20.09.2013 TRENCHSTOP™ Series *) E on and E ts include losses E ts * due to diode recovery E ts * 0,5 m J 0,4 m J 0,3 m J E off 0,2 m J E on * E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES *) E on and E ts include losses due to diode recovery 0,6 m J IGD06N60T q 0,4 m J 0,3 m J E on * 0,2 m J E off 0,1 m J 0,1 m J 0,0 m J 0A 2A 4A 6A 8A 0,0 m J 10A  IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=175°C, VCE=400V, VGE=0/15V, rG=23Ω, Dynamic test circuit in Figure E)   RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, IC = 6A, Dynamic test circuit in Figure E) *) E on and E ts include losses *) E on and E ts include losses due to diode recovery 0,5m J E, SWITCHING ENERGY LOSSES 0,4m J E, SWITCHING ENERGY LOSSES  0,3m J E ts * 0,2m J E off 0,1m J due to diode recovery E ts * 0,4m J 0,3m J E off 0,2m J E on * 0,1m J E on * 0,0m J 50°C 100°C 0,0m J 200V 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=400V, VGE = 0/15V, IC = 6A, rG = 23Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS 300V 400V 500V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 6A, rG = 23Ω, Dynamic test circuit in Figure E) 7 Rev. 2.2, 20.09.2013 TRENCHSTOP™ Series IGD06N60T q VGE, GATE-EMITTER VOLTAGE 1nF C iss c, CAPACITANCE 15V 120V 10V 480V 100pF C oss 5V C rss 10pF 0V 0nC 10nC 20nC 30nC 40nC 50nC 0V QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 6 A) 10V 20V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) tSC, SHORT CIRCUIT WITHSTAND TIME IC(sc), short circuit COLLECTOR CURRENT 12µs 80A 60A 40A 20A 0A 12V 14V 16V 8µs 6µs 4µs 2µs 0µs 10V 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE  400V, Tj  150C) IFAG IPC TD VLS 10µs 11V 12V 13V 14V VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=400V, start at TJ=25°C, TJmax