IM512-L6A Datasheet
CIPOS™ Mini
IM512-L6A
Description
The CIPOS™ Mini family offers the chance for integrating various power and control components to increase
reliability, optimize PCB size and system costs.
It is designed to control two phase AC motors for applications like refrigerator with linear compressor. The
package concept is specially adapted to power applications, which need good thermal conduction and
electrical isolation, but also EMI-save control and overload protection.
2Φ-bridges with CoolMOS™ CFD2 Power MOSFETs are combined with an optimized SOI gate driver for excellent
electrical performance.
Features
Fully isolated Dual In-Line molded module
650V CoolMOS™ CFD2 Power MOSFETs
Rugged SOI gate driver technology with stability
against transient and negative voltage
Allowable negative VS potential up to -11V
for signal transmission at VBS=15V
Integrated bootstrap functionality
Over-current shutdown
Built-in NTC thermistor for temperature monitor
Under-voltage lockout at all channels
Low-side source pins accessible
for all phase current monitoring (open source)
Cross-conduction prevention
All of 4 switches turn off during protection
Lead-free terminal plating; RoHS compliant
Potential applications
Two phase linear compressor for Refrigerators and single phase low power motor drives
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Table 1
Product Information
Base Part Number
Package Type
IM512-L6A
DIP 36x21
Datasheet
www.infineon.com
Standard Pack
Form
Quantity
20 tubes
280 pcs
Remark
Please read the Important Notice and Warnings at the end of this document
Version 2.1
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CIPOS™ Mini with CoolMOS™ Technology
IM512-L6A
Table of Contents
Table of Contents
1
Internal Electrical Schematic ................................................................................................... 3
2
2.1
2.2
Pin Description ...................................................................................................................... 4
Pin Assignment ........................................................................................................................................ 4
Pin Description ........................................................................................................................................ 5
3
3.1
3.2
3.3
Absolute Maximum Ratings ..................................................................................................... 7
Module Section ........................................................................................................................................ 7
Inverter Section ....................................................................................................................................... 7
Control Section........................................................................................................................................ 7
4
Thermal Characteristics .......................................................................................................... 8
5
Recommended Operation Conditions ....................................................................................... 9
6
6.1
6.2
Static Parameters ................................................................................................................. 10
Inverter Section ..................................................................................................................................... 10
Control Section...................................................................................................................................... 10
7
7.1
Dynamic Parameters ............................................................................................................. 11
Inverter Section ..................................................................................................................................... 11
8
Thermistor ........................................................................................................................... 12
9
Mechanical Characteristics and Ratings ................................................................................... 13
10
Qualification Information....................................................................................................... 14
11
Diagrams and Tables ............................................................................................................. 15
11.1
TC Measurement Point ........................................................................................................................... 15
11.2
Backside Curvature Measurment Point ................................................................................................ 15
11.3
Switching Time Definition ..................................................................................................................... 16
12
Application Guide .................................................................................................................. 17
12.1
Typical Application Schematic ............................................................................................................. 17
12.2
Performance Chart ................................................................................................................................ 18
13
Package Outline .................................................................................................................... 19
Revision history............................................................................................................................. 20
Datasheet
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IM512-L6A
Internal Electrical Schematic
1
Internal Electrical Schematic
NC (24)
P (23)
(1) VS(U)
(2) VB(U)
VB1
HO1
RBS1
VS1
U (22)
(3) VS(V)
(4) VB(V)
VB2
RBS2
HO2
VS2
V (21)
(5) NC
(6) NC
NC (20)
(7) HIN(U)
HIN1
(8) HIN(V)
HIN2
(9) NC
(10) LIN(U)
LIN1
(11) LIN(V)
LIN2
LO1
NU (19)
LO2
(12) NC
NV (18)
(13) VDD
VDD
(14) VFO
VFO
(15) ITRIP
ITRIP
(16) VSS
VSS
NC (17)
Thermistor
Figure 1
Datasheet
Internal electrical schematic
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IM512-L6A
Pin Description
2
Pin Description
2.1
Pin Assignment
Bottom View
(24) NC
(1) VS(U)
(2) VB(U)
(23) P
(3) VS(V)
(4) VB(V)
(22) U
(5) NC
(6) NC
(21) V
(7) HIN(U)
(8) HIN(V)
(9) NC
(10) LIN(U)
(11) LIN(V)
(12) NC
(13) VDD
(14) VFO
(15) ITRIP
(16) VSS
Figure 2
Table 2
(20) NC
(19) NU
(18) NV
(17) NC
Pin configuration
Pin assignment
Pin Number
1
Pin name
VS(U)
Pin Description
U-phase high-side floating IC supply offset voltage
2
VB(U)
U-phase high-side floating IC supply voltage
3
VS(V)
V-phase high-side floating IC supply offset voltage
4
VB(V)
V-phase high-side floating IC supply voltage
5
NC
No connection
6
NC
No connection
7
HIN(U)
U-phase high-side gate driver input
8
HIN(V)
V-phase high-side gate driver input
9
NC
No connection
10
LIN(U)
U-phase low-side gate driver input
11
LIN(V)
V-phase low-side gate driver input
12
NC
No connection
13
VDD
Low-side control supply
14
VFO
Fault output / Temperature monitor
15
ITRIP
Over-current shutdown input
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Pin Description
Pin Number
16
Pin name
VSS
Pin Description
Low-side control negative supply
17
NC
No connection
18
NV
V-phase low-side source
19
NU
U-phase low-side source
20
NC
No connection
21
V
Motor V-phase output
22
U
Motor U-phase output
23
P
Positive bus input voltage
24
NC
No connection
2.2
Pin Description
HIN(U, V) and LIN(U, V) (Low-side and high-side
control pins, Pin 7, 8, 10 and 11)
The integrated gate drive provides additionally a
shoot-through prevention capability which avoids
the simultaneous on-state of two gate drivers of the
same leg (i.e. HO1 and LO1, HO2 and LO2). When
two inputs of a same leg are activated, only former
activated one is activated so that the leg is kept
steadily in a safe state.
These pins are positive logic and they are
responsible for the control of the integrated
MOSFET. The Schmitt-trigger input thresholds of
them are such to guarantee LSTTL and CMOS
compatibility down to 3.3 V controller outputs.
Pull-down resistor of about 5 k is internally
provided to pre-bias inputs during supply start-up
and a zener clamp is provided for pin protection
purposes. Input Schmitt-trigger and noise filter
provide noise rejection to short input pulses.
A minimum deadtime insertion of typically 380ns is
also provided by driver IC, in order to reduce crossconduction of the power switches.
VFO (Fault-output and NTC, Pin 14)
The VFO pin indicates a module failure in case of
under voltage at pin VDD or in case of triggered
over-current detection at ITRIP. A pull-up resistor is
externally required.
The noise filter suppresses control pulses which are
below the filter time tFILIN. The filter acts according
to Figure 4.
CIPOSTM
Schmitt-Trigger
HINx
LINx
5k
UZ=10.5V
VSS
Figure 3
VFO
SWITCH LEVEL
VIH; VIL
Input pin structure
tFILIN
b)
tFILIN
HIN
LIN
HIN
LIN
HO
LO
HO
LO
Figure 4
Input filter timing diagram
Thermistor
From UV detection
Internal circuit at pin VFO
ITRIP (Over-current detection function, Pin 15)
It is not recommended for proper work to provide
input pulse-width lower than 1µs.
Datasheet
From ITRIP - Latch
The same pin provides direct access to the NTC,
which is referenced to VSS. An external pull-up
resistor connected to +5 V ensures that the
resulting voltage can be directly connected to the
microcontroller.
high
low
RON,FLT
1
VSS
Figure 5
a)
CIPOSTM
VDD
INPUT NOISE
FILTER
CIPOS™ Mini provides an over-current detection
function by connecting the ITRIP input with the
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Pin Description
MOSFET drain current feedback. The ITRIP
comparator threshold (typ. 0.47 V) is referenced to
VSS ground. An input noise filter (typ.: tITRIPMIN = 530
ns) prevents the driver to detect false over-current
events.
Due to the low power consumption, the floating
driver stage is supplied by integrated bootstrap
circuit.
The under-voltage detection operates with a rising
supply threshold of typical VBSUV+ = 12.1 V and a
falling threshold of VBSUV- = 10.4 V.
Over-current detection generates a shutdown of all
outputs of the gate driver after the shutdown
propagation delay of typically 1000 ns.
VS(U, V) provide a high robustness against negative
voltage in respect of VSS of -50 V transiently. This
ensures very stable designs even under rough
conditions.
The fault-clear time is set to minimum 40 µs.
VDD, VSS (Low-side control supply and reference,
Pin 13, 16)
NV, NU (Low-side source, Pin 18 and 19)
The low-side sources are available for current
measurements of each phase leg. It is
recommended to keep the connection to pin VSS as
short as possible in order to avoid unnecessary
inductive voltage drops.
VDD is the control supply and it provides power
both to input logic and to output power stage.
Input logic is referenced to VSS ground.
The under-voltage circuit enables the device to
operate at power on when a supply voltage of at
least a typical voltage of VDDUV+ = 12.1 V is present.
V, U (High-side source and low-side drain, Pin 21
and 22)
The IC shuts down all the gate drivers power
outputs, when the VDD supply voltage is below
VDDUV- = 10.4 V. This prevents the power switches
from critically low gate voltage levels during onstate and therefore from excessive power
dissipation.
These pins are connected to U, V input of a motor.
P (Positive bus input voltage, Pin 23)
The high-side MOSFETs are connected to the bus
voltage. It is noted that the bus voltage does not
exceed 450V.
VB(U, V) and VS(U, V) (High-side supplies, Pin 1 4)
VB to VS is the high-side supply voltage. The highside circuit can float with respect to VSS following
the high-side power device source voltage.
Datasheet
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Absolute Maximum Ratings
3
Absolute Maximum Ratings
(VDD = 15 V and TJ = 25°C, if not stated otherwise)
3.1
Module Section
Description
Symbol
Storage temperature range
TSTG
Operating case temperature
TC
Operating junction temperature
TJ
Isolation test voltage
VISO
3.2
Refer to Figure 7
1min, RMS, f = 60 Hz
Value
Unit
-40 ~ 125
°C
-40 ~ 125
°C
-40 ~ 150
°C
2000
V
Value
Unit
Inverter Section
Description
Symbol
Condition
Max. blocking voltage
VDSS
ID = 250 µA
650
V
DC link supply voltage of P-N
VPN
Applied between P-N
450
V
VPN(surge)
Applied between P-N
500
V
TC = 25°C, TJ < 150°C
±10
A
less than 1 ms
±12
A
29.7
W
5
µs
Value
Unit
VS
600
V
Repetitive peak reverse voltage of
bootstrap diode
VRRM
600
V
Module supply voltage
VDD
20
V
High-side floating supply voltage
(VB reference to VS)
VBS
20
V
Input voltage
VIN
10
V
DC link supply voltage (surge) of P-N
Output current
IO
Peak output current
IO(peak)
Power dissipation per MOSFET
Ptot
Short circuit withstand time
tSC
1
3.3
VDC ≤ 400 V, TJ = 150°C
Control Section
Description
High-side offset voltage
1
Condition
Symbol
Condition
LIN, HIN, ITRIP
Allowed number of short circuits: 1s.
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Thermal Characteristics
4
Thermal Characteristics
Description
Single MOSFET thermal resistance,
junction-case
Datasheet
Symbol
Condition
Value
Min.
Typ.
Max.
4.21
RthJC
8 of 21
Unit
K/W
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IM512-L6A
Recommended Operation Conditions
5
Recommended Operation Conditions
All voltages are absolute voltages referenced to VSS -potential unless otherwise specified.
Description
Symbol
Value
Min.
Typ.
Max.
Unit
DC link supply voltage of P-N
VPN
0
-
450
V
Low-side supply voltage
VDD
14.0
15
18.5
V
High-side floating supply voltage (VB vs. VS)
VBS
13.5
-
18.5
V
Logic input voltages LIN, HIN, ITRIP
VIN
0
-
5
V
PWM carrier frequency
fPWM
-
-
20
kHz
External deadtime between HIN and LIN
DT
1.5
-
-
µs
VCOMP
-5
-
5
V
PWIN(ON)
PWIN(OFF)
1.2
-
-
µs
ΔVBS,
ΔVDD
-1
-1
-
1
1
V/µs
Voltage between VSS - N (including surge)
Minimum input pulse width
Control supply variation
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Static Parameters
6
Static Parameters
(VDD = 15V and TJ = 25°C, if not stated otherwise)
6.1
Inverter Section
Description
Symbol
Condition
Value
Unit
Min.
Typ.
Max.
RDS(on)
ID = 4.4 A
TJ = 25°C
150°C
-
0.28
0.73
0.33
-
Ω
Drain-Source leakage current
IDSS
VDS = 600 V
-
-
1
mA
Diode forward voltage
VF
IF = 4.4 A
TJ = 25°C
-
0.9
-
Drain-Source on-state resistance
6.2
V
Control Section
Description
Symbol
Condition
Value
Min.
Typ.
Max.
Unit
Logic "1" input voltage (LIN, HIN)
VIH
-
2.1
2.5
V
Logic "0" input voltage (LIN, HIN)
VIL
0.7
0.9
-
V
ITRIP positive going threshold
VIT,TH+
400
470
540
mV
ITRIP input hysteresis
VIT,HYS
-
70
-
mV
VDD and VBS supply under voltage
positive going threshold
VDDUV+
VBSUV+
10.8
12.1
13.0
V
VDD and VBS supply under voltage
negative going threshold
VDDUVVBSUV-
9.5
10.4
11.2
V
VDD and VBS supply under voltage
lockout hysteresis
VDDUVH
VBSUVH
1.0
1.7
-
V
Quiescent VBx supply current
(VBx only)
IQBS
HIN = 0 V
-
-
500
µA
Quiescent VDD supply current
(VDD only)
IQDD
LIN = 0 V, HINX = 5 V
-
-
900
µA
Input bias current for LIN, HIN
IIN+
VIN = 5 V
-
1
1.5
mA
VITRIP = 5 V
-
65
150
µA
Input bias current for ITRIP
IITRIP+
Input bias current for VFO
IFO
VFO = 5 V, VITRIP = 0 V
-
60
-
µA
VFO output voltage
VFO
IFO = 10 mA, VITRIP = 1 V
IF = 20 mA, VS2 and VS3 =
0V
Between VF1 = 4 V and VF2
=5V
-
0.5
-
V
-
2.6
-
V
-
40
-
Ω
Bootstrap diode forward voltage
VF_BSD
Bootstrap resistance
RBSD
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Dynamic Parameters
7
Dynamic Parameters
(VDD = 15V and TJ = 25°C, if not stated otherwise)
7.1
Inverter Section
Description
Symbol
Turn-on propagation delay time
ton
Turn-on rise time
tr
Turn-on switching time
tc(on)
Reverse recovery time
trr
Turn-off propagation delay time
toff
Turn-off fall time
tf
Condition
VLIN, HIN = 5 V,
ID = 6 A,
VDC = 300 V
Value
Unit
Min.
Typ.
Max.
-
875
-
ns
-
85
-
ns
-
200
-
ns
-
115
-
ns
-
810
-
ns
-
10
-
ns
-
20
-
ns
Turn-off switching time
tc(off)
VLIN, HIN = 0 V,
ID = 6 A,
VDC = 300 V
Short circuit propagation delay time
tSCP
From VIT,TH+ to 10% ISC
-
1300
-
ns
MOSFET turn-on energy (includes
reverse recovery of diode)
Eon
VDC = 300 V, ID = 6 A
TJ = 25°C
150°C
-
360
660
-
µJ
Eoff
VDC = 300 V, ID = 6 A
TJ = 25°C
150°C
-
15
25
-
µJ
Erec
VDC = 300 V, ID = 6 A
TJ = 25°C
150°C
-
55
125
-
µJ
MOSFET turn-off energy
Diode recovery energy
Control Section
Description
Bootstrap diode reverse recovery
time
Input filter time ITRIP
Symbol
Condition
trr_BS
tITRIPmin
Unit
Min.
Typ.
Max.
IF = 0.6 A, di/dt = 80 A/µs
-
50
-
ns
VITRIP = 1 V
-
530
-
ns
-
290
-
ns
40
65
200
µs
-
730
1000
ns
-
380
-
ns
-
20
100
ns
Input filter time at LIN, HIN for turn
on and off
tFILIN
VLIN, HIN = 0 V & 5 V
Fault clear time after ITRIP-fault
tFLTCLR
ITRIP to Fault propagation delay
tFLT
VITRIP = 1 V
VLIN, HIN = 0 or VLIN, HIN = 5 V,
VITRIP = 1 V
Internal deadtime
DTIC
Matching propagation delay time (On
and Off) all channels
MT
Datasheet
Value
External dead time >500 ns
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Thermistor
8
Thermistor
Description
Condition
Resistance
Symbol
Unit
Min.
Typ.
Max.
RNTC
-
85
-
k
B(25/100)
-
4092
-
K
TNTC = 25°C
B-constant of NTC
(Negative Temperature Coefficient)
Value
3500
2500
2000
1500
30
Thermistor resistance [kΩ ]
Thermistor resistance [kΩ ]
35
3000
25
Min.
Typ.
Max.
20
15
10
5
0
50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130
1000
Thermistor temperature [℃]
500
0
-40 -30 -20 -10 0
Figure 6
10 20 30 40 50 60 70 80 90 100 110 120 130
Thermistor temperature [℃]
Thermistor resistance – temperature curve and table
(For more information, please refer to the application note ‘AN2016-10 CIPOS Mini Technical description’)
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Mechanical Characteristics and Ratings
9
Mechanical Characteristics and Ratings
Description
Condition
Comparative Tracking Index (CTI)
Value
Unit
Min.
Typ.
Max.
550
-
-
V
Mounting torque
M3 screw and washer
0.59
0.69
0.78
Nm
Backside Curvature
Refer to Figure 8
-50
-
100
µm
-
6.12
-
g
Weight
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Qualification Information
10
Qualification Information
UL Certification
File number: E314539
Moisture sensitivity level
(SOP23 only)
-
RoHS Compliant
Yes (Lead-free terminal plating)
ESD
HBM(Human Body Model)
Class 2
CDM(Charged Device Model)
Class C3
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Diagrams and Tables
11
11.1
Figure 7
11.2
Diagrams and Tables
TC Measurement Point
TC measurement point1
Backside Curvature Measurment Point
+
-
- +
Figure 8
Backside curvature measurement position
Any measurement except for the specified point in Figure 7 is not relevant for the temperature verification and
brings wrong or different information.
1
Datasheet
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Diagrams and Tables
11.3
Switching Time Definition
HINx
LINx
2.1V
0.9V
trr
toff
ton
10%
iDx
90%
90%
tf
vDSx
10%
tr
10%
tc(on)
tc(off)
Datasheet
10%
10%
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Application Guide
12
Application Guide
12.1
Typical Application Schematic
NC (24)
P (23)
(1) VS(U)
(2) VB(U)
HO1
VB1
RBS1
VS1
U (22)
(3) VS(V)
#4
(4) VB(V)
VB2
RBS2
HO2
VS2
V (21)
Single Phase
AC Motor
(5) NC
(6) NC
NC (20)
#5
#1
(7) HIN(U)
(8) HIN(V)
HIN1
LO1
HIN2
NU (19)
(9) NC
(10) LIN(U)
Micro
Controller
(11) LIN(V)
LIN1
LIN2
#6
LO2
(12) NC
#7
NV (18)
(13) VDD
VDD line
(14) VFO
(15) ITRIP
(16) VSS
VFO
ITRIP
NC (17)
VSS
Thermistor
Control
GND line
5 or 3.3V line
Power
GND line
VDD
#3
Temperature monitor
#2
Figure 9
U-phase current sensing
V-phase current sensing
Typical application circuit
#1 Input circuit
− RC filter can be used to reduce input signal noise. (100 Ω, 1 nF)
− The capacitors should be located close to the IPM (to VSS terminal especially).
#2 Itrip circuit
− To prevent a mis operation of protection function, RC filter is recommended.
− The capacitor should be located close to Itrip and VSS terminals.
#3 VFO circuit
− VFO pin is open drain configuration. This terminal should be pulled up to the bias voltage of the 5 V/3.3 V
through a proper resistor.
− It is recommended that RC filter is placed close to the controller.
#4 VB-VS circuit
− Capacitors for high-side floating supply voltage should be placed close to VB and VS terminals.
#5 Snubber capacitor
− The wiring among CIPOS™ Mini, snubber capacitor and shunt resistors should be short as possible.
#6 Shunt resistor
− SMD type shunt resistors are strongly recommended to minimize its internal stray inductance.
#7 Ground pattern
− Pattern overlap of power ground and signal ground should be minimized. The patterns should be
connected at one end of shunt resistor only for the same potential.
Datasheet
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Application Guide
12.2
Figure 10
Performance Chart
Maximum operating current SOA1
This maximum operating current SOA is just one of example based on typical characteristics for this product. It
can be changed by each user’s actual operating conditions.
1
Datasheet
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IM512-L6A
Package Outline
13
Datasheet
Package Outline
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IM512-L6A
Revision history
Revision history
Document
version
Date of release
Description of changes
V 2.0
2017-12-07
Initial release
V 2.1
2020-04-24
Updated Table 1, Figure 1, and Figure 9
Datasheet
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Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2020-04-24
Published by
Infineon Technologies AG
81726 München, Germany
© 2020 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about this
document?
Email: erratum@infineon.com
Document reference
ifx1
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.