IMZA65R027M1H
MOSFET
650VCoolSiCªM1SiCTrenchPowerDevice
PG-TO247-4-3
The650VCoolSiC™isbuiltoverthesolidsiliconcarbidetechnology
developedinInfineoninmorethan20years.Leveragingthewidebandgap
SiCmaterialcharacteristics,the650VCoolSiC™MOSFEToffersaunique
combinationofperformance,reliabilityandeaseofuse.Suitableforhigh
temperatureandharshoperations,itenablesthesimplifiedandcost
effectivedeploymentofthehighestsystemefficiency.
Tab
1
23
4
Features
•Optimizedswitchingbehaviorathighercurrents
•CommutationrobustfastbodydiodewithlowQrr
•Superiorgateoxidereliability
•Bestthermalconductivityandbehavior
•LowerRDS(on)andpulsecurrentdependencyontemperature
•Increasedavalanchecapability
•Compatiblewithstandarddrivers(recommendeddrivingvoltage:18V)
•Kelvinsourceprovidesupto4timeslowerswitchinglosses
Drain
Pin 1, Tab
*1
Gate
Pin 4
Driver
Source
Pin 3
Benefits
*1: Internal body diode
Power
Source
Pin 2
•Uniquecombinationofhighperformance,highreliabilityandeaseofuse
•Easeofuseandintegration
•Suitablefortopologieswithcontinuoushardcommutation
•Higherrobustnessandsystemreliability
•Efficiencyimprovement
•Reducedsystemsizeleadingtohigherpowerdensity
Potentialapplications
•SMPS
•UPS(uninterruptablepowersupplies)
•SolarPVinverters
•EVcharginginfrastructure
•Energystorageandbatteryformation
•ClassDamplifiers
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS@TJ=25°C
650
V
RDS(on),typ
27
mΩ
QG,typ
63
nC
ID,pulse
184
A
Qoss@400V
147
nC
Eoss@400V
22.2
µJ
Type/OrderingCode
Package
IMZA65R027M1H
PG-TO 247-4-3
Final Data Sheet
Marking
65R027M1
1
RelatedLinks
see Appendix A
Rev.2.0,2019-12-16
650VCoolSiCªM1SiCTrenchPowerDevice
IMZA65R027M1H
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
2
Rev.2.0,2019-12-16
650VCoolSiCªM1SiCTrenchPowerDevice
IMZA65R027M1H
1Maximumratings
atTJ=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
59
41
A
TC=25°C
TC=100°C
-
184
A
TC=25°C
-
-
326
mJ
ID=12.2A,VDD=50V,L=4.4mH;
see table 10
EAR
-
-
1.63
mJ
ID=12.2A,VDD=50V;seetable10
Avalanche current, single pulse
IAS
-
-
12.2
A
-
MOSFETdv/dtruggedness
dv/dt
-
-
200
V/ns
VDS=0...400V
Gate source voltage (recommended
driving voltage)
VGS
0
-
18
V
AC(f>1Hz)
Gate source voltage (dynamic)
VGS
-5
-
23
V
tpulse,negative
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