IPB034N03LG

IPP034N03L G Type IPB034N03L G !"#$%!&™3 Power-Transistor Product Summary Features V DS 30 V • Fast switching MOSFET for SMPS R DS(on),max 3.4 mW • Optimized technology for DC/DC converters ID 80 A • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type IPP034N03L G IPB034N03L G Package PG-TO220-3-1 PG-TO263-3 Marking 034N03L 034N03L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C 80 V GS=10 V, T C=100 °C 80 V GS=4.5 V, T C=25 °C 80 V GS=4.5 V, T C=100 °C 77 Unit A Pulsed drain current2) I D,pulse T C=25 °C 400 Avalanche current, single pulse3) I AS T C=25 °C 80 Avalanche energy, single pulse E AS I D=80 A, R GS=25 W 70 mJ Reverse diode dv /dt dv /dt I D=80 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 °C 6 kV/µs Gate source voltage V GS 1) Rev. 2.0 ±20 V J-STD20 and JESD22 page 1 2010-02-19 IPP034N03L G IPB034N03L G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Operating and storage temperature T j, T stg Value T C=25 °C IEC climatic category; DIN IEC 68-1 Parameter Unit 94 W -55 ... 175 °C 55/175/56 Values Symbol Conditions Unit min. typ. max. - - 1.6 minimal footprint - - 62 6 cm² cooling area4) - - 40 Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 30 - - Gate threshold voltage V GS(th) V DS=V GS, I D=250 µA 1 - 2.2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=30 V, V GS=0 V, T j=125 °C - 10 100 I GSS V GS=20 V, V DS=0 V - 10 100 nA R DS(on) V GS=4.5 V, I D=30 A - 3.8 4.7 mW V GS=10 V, I D=30 A - 2.8 3.4 - 1.6 - W 50 100 - S Gate-source leakage current Drain-source on-state resistance 5) Gate resistance RG Transconductance g fs 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information |V DS|>2|I D|R DS(on)max, I D=30 A V µA 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 5) Rev. 2.0 Measured from drain tab to source pin page 2 2010-02-19 IPP034N03L G IPB034N03L G Parameter Values Symbol Conditions Unit min. typ. max. - 4000 5300 - 1400 1900 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=15 V, f =1 MHz Output capacitance C oss Reverse transfer capacitance Crss - 81 - Turn-on delay time t d(on) - 9.2 - Rise time tr - 6.4 - Turn-off delay time t d(off) - 35 - Fall time tf - 5.4 - Gate to source charge Q gs - 12 - Gate charge at threshold Q g(th) - 6.3 - Gate to drain charge Q gd - 5.6 - Switching charge Q sw - 11 - Gate charge total Qg - 25 - Gate plateau voltage V plateau - 2.9 - Gate charge total Qg V DD=15 V, I D=30 A, V GS=0 to 10 V - 51 - Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 4.5 V - 21 - Output charge Q oss V DD=15 V, V GS=0 V - 37 - - - 80 - - 320 V DD=15 V, V GS=10 V, I D=30 A, R G=1.6 W pF ns Gate Charge Characteristics5) V DD=15 V, I D=30 A, V GS=0 to 4.5 V nC V nC Reverse Diode Diode continuous forward current IS A T C=25 °C Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=30 A, T j=25 °C - 0.83 1.1 V Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/µs - - 20 nC 6) Rev. 2.0 See figure 16 for gate charge parameter definition page 3 2010-02-19 IPP034N03L G IPB034N03L G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS!10 V 100 80 80 60 60 I D [A] P tot [W] 100 40 40 20 20 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 10 1 µs limited by on-state resistance 10 µs 102 100 µs 1 10 1 ms 1 0.5 Z thJC [K/W] I D [A] DC 10 ms 0.2 0.1 0.05 0.1 100 0.02 0.01 single pulse 10-1 10-1 0.01 100 101 102 0 -6 10 0 -5 10 0 -4 10 0 -3 10 0 -2 10 1 -1 10 0 t p [s] V DS [V] Rev. 2.0 0 10 page 4 2010-02-19 IPP034N03L G IPB034N03L G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 160 16 120 4.5 V 10 V 3V 4V 12 R DS(on) [mW ] 5V I D [A] 3.5 V 80 3.2 V 3.5 V 8 3.2 V 4V 40 4 4.5 V 5V 3V 10 V 11.5 V 2.8 V 0 0 0 1 2 3 0 20 40 V DS [V] 60 80 100 80 100 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 160 160 120 120 g fs [S] I D [A] parameter: T j 80 40 80 40 175 °C 25 °C 0 0 0 1 2 3 4 5 V GS [V] Rev. 2.0 0 20 40 60 I D [A] page 5 2010-02-19 IPP034N03L G IPB034N03L G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=30 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=250 µA 7 2.5 6 2 R DS(on) [mW W] 5 V GS(th) [V] 4 98 % 3 1.5 1 typ 2 0.5 1 0 0 -60 -20 20 60 100 140 180 -60 -20 20 T j [°C] 60 100 140 180 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 1000 10000 Ciss Coss 103 100 1000 175 °C, 98% I F [A] C [pF] 25 °C 102 101 Crss 100 1 5 10 15 20 25 30 V DS [V] Rev. 2.0 25 °C, 98% 10 10 0 175 °C 0.0 0.5 1.0 1.5 2.0 V SD [V] page 6 2010-02-19 IPP034N03L G IPB034N03L G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD 100 12 15 V 100 °C 25 °C 6V 10 24 V 150 °C V GS [V] I AV [A] 8 10 6 4 2 1 0 10-1 100 101 102 103 0 10 t AV [µs] 20 30 40 50 60 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 34 V GS Qg 32 V BR(DSS) [V] 30 28 26 V g s(th) 24 Q g (th) 22 Q sw Q gs 20 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 2.0 page 7 2010-02-19 IPP034N03L G IPB034N03L G Package Outline Footprint: Rev. 2.0 PG-TO220-3-1 Packaging: page 8 2010-02-19 IPP034N03L G IPB034N03L G Package Outline Rev. 2.0 PG-TO263-3 page 9 2010-02-19 IPP034N03L G IPB034N03L G  5 # ,*3)& % # 9 .'*.& /. & $ )./,/( *& 3         NJFJDO  5& 4 / 4& $ ).*$ " ,2& 15 *2& - & .4 3 $ /- 0/.& .43 - " 9 $ /.4 " *. % " .( & 2/5 3 35 # 34 " .$ & 3  /2*.'/2- " 4 */. /. 4)& 490& 3 *. 15 & 34*/. 0,& " 3& $ /.4" $ 49/5 2.& " 2& 34.'*.& /. & $ )./,/( *& 3  ''*$ &  .'*.& /. & $ )./,/( *& 3  /- 0/.& .4 3 - " 9 /.,9 # & 5 3& % *. ,*'& 35 00/24% & 6*$ & 3 /23934 & - 3 7*4 )4 )& & 802& 33 72*4 4 & . 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