IPB049N06L3GATMA1

IPB049N06L3 G IPP052N06L3 G Jf]R ™ "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R  - @? >2 I- ' R ) AE:> :K65 E649? @= @8J 7@C    4@? G6CE6CD   I9 .( K ,&/ Z" 0( 6 R  I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) '  R( 492 ? ? 6= = @8:4 = 6G6= R    2 G2 = 2 ? 496 E6DE 65 R* 3 7C66 A= 2E :? 8 , @" - 4@> A= :2 ? E R+ F2 = :7:65 2 44@C5:? 8 E@ $     )# 7@CE2 C86E2 AA= :42 E:@? D R" 2 = @86? 7C66 2 44@C5:? 8 E@ #        Type #*     (   &  ! #* *    (   &  ! Package F=%JE*.+%+ F=%JE**(%+ Marking (,1D(.B (-*D(.B Maximum ratings, 2 ET W   U  F? = 6DD @E96CH:D6 DA64:7:65 Parameter Symbol Conditions  @? E :? F@FD 5C 2 :? 4FCC6? E I9 T 8   U *# Value 0( T 8   U 0( Unit 6 * F= D65 5C2 :? 4FCC6? E+# I 9$]bY`R T 8   U +*(  G2 = 2 ? 496 6? 6C8J D:? 8= 6 AF= D6,# E 6I I 9     R =I   " // Z@ !2 E6 D@FC46 G@= E2 86 V =I r*( K * @H6C5:DD:A2 E:@? P a\a ))- L ) A6C2 E:? 8 2 ? 5 DE@C 2 86 E6> A6C2 EFC6 T W T `aT     U )# *# $ - .   2 ? 5 $  -     FC C 6? E:D = :> :E65 3 J 3 @? 5H:C 6 H:E9 2 ? R aU@8  % 0 E 96 49:A :D 2 3 = 6 E@ 42 C C J   +# - 66 7:8FC 6  7@C> @C 6 56E 2 := 65 :? 7@C > 2 E:@? ,# - 66 7:8FC 6  7@C> @C 6 56E 2 := 65 :? 7@C >2 E :@? , 6G   T 8   U A2 86      IPB049N06L3 G IPP052N06L3 G Parameter Values Symbol Conditions Unit min. typ. max. % % )&+  % % ,( .( % % )&* )&/ *&* Thermal characteristics .96C> 2 =C6D:DE2 ? 46 ;F? 4E:@? 42 D6 R aU@8 .96C> 2 =C6D:DE2 ? 46 R aU@6 ;F? 4E :@? 2 > 3 :6? E > :? :> 2 =7@@EAC:? E  4> W 4@@= :? 8 2 C62 -# A'L Electrical characteristics, 2 ET W   U  F? = 6DD @E96CH:D6 DA64:7:65 Static characteristics  C2 :? D@FC46 3 C62 I   > > I  > > 6A@IJ *   4@? ? 64E :@? *   :D G6C E:42 =:? DE := =2 :C , 6G   hV 9Ih5*hI 9hR 9I"\[#ZNe I 9    ,  H:E9  4>* @? 6 = 2 J6C    X> E 9:4 6E6C567:? :E :@? A2 86       IPB049N06L3 G IPP052N06L3 G 1 Power dissipation 2 Drain current P a\a4S"T 8# I 94S"T 8 V =I"  / 120 100 100 80 80 I D [A] P tot [W] 60 60 40 40 20 20 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I 94S"V 9I T 8   U  D 4( Z aU@84S"t ]# A2 C2 > 6E6C t ] A2 C2 > 6E6C  D 4t ]'T 103 101 = :> :E 65 3 J @? DE2 E6 _R`V`aN[PR XD  XD 102   XD 100  >D 101 (&- Z thJC [K/W] I D [A] >D 98 (&* (&) 10 10 -1 (&((&(* (&() 0 D:? 8= 6 AF= D6 10-1 10-1 10-2 100 101 102 V DS [V] , 6G   10-5 10-4 10-3 10-2 10-1 100 t p [s] A2 86       IPB049N06L3 G IPP052N06L3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I 94S"V 9I T W   U R 9I"\[#4S"I 9 T W   U A2 C 2 > 6E6C V =I A2 C2 > 6E6C  V =I 320 14  /  /  /  / 280  / 12   /  /   /  / 240 10   / R DS(on) [m ] I D [A] 200 160  / 120 8 6  /  /  / 4 80   / 2 40  / 0 0 0 1 2 3 4 5 0 80 160 V DS [V] 240 320 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I 94S"V =I L V 9Ih5*hI 9hR 9I"\[#ZNe g S`4S"I 9 T W   U A2 C 2 > 6E6C T W 200 160 180 140 160 120 140 100 g fs [S] I D [A] 120 100 80 80 60 60 40 40   U   U 20 20 0 0 0 2 4 6 , 6G   0 50 100 150 I D [A] V GS [V] A2 86       IPB049N06L3 G IPP052N06L3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R 9I"\[#4S"T W I 9     V =I  / V =I"aU#4S"T W V =I4V 9I 12 3 10 2.5 8 2 6 V GS(th) [V] R DS(on) [m ] A2 C2 > 6E6C  I9 ZNe    X 1.5 -0t6 af] 4 1 2 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C 4S"V 9I V =I  /  f  ' " K I 6E6C T W"`aN_a# A2 C2 > 6E6C  V 99 100 12  / 10   U   U  /   U  / I AS [A] V GS [V] 8 10 6 4 2 0 1 0.1 1 10 100 0 1000 20 40 60 80 100 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V 7H"9II#4S"T W I 9 >  70 V =I Qg V BR(DSS) [V] 65 60 V T `"aU# 55 Q T "aU# Q `d Q T` 50 -60 -20 20 60 100 140 Q g ate Q TQ 180 T j [°C] , 6G   A2 86       IPB049N06L3 G IPP052N06L3 G PG-TO220-3 , 6G   A2 86       IPB049N06L3 G IPP052N06L3 G PG-TO263 (D²-Pak) , 6G   A2 86       IPB049N06L3 G IPP052N06L3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. , 6G   A2 86