IPB120N03S4L03ATMA1

IPB120N03S4L-03 OptiMOS™-T2 Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 30 V R DS(on),max 3 mW 120 ID • MSL1 up to 260°C peak reflow A • 175°C operating temperature PG-TO263-3-2 • Green package (lead free) • 100% Avalanche tested Type Package Ordering Code Marking IPB120N03S4L-03 PG-TO263-3-2 - 4N03L03 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Conditions Value T C=25°C, V GS=10V 120 T C=100°C, V GS=10V2) 88 Unit A Pulsed drain current2) I D,pulse T C=25°C 480 Avalanche energy, single pulse E AS I D=60A 75 mJ Avalanche current, single pulse I AS - 120 A Gate source voltage V GS ±16 V Power dissipation P tot 79 W Operating and storage temperature T j, T stg -55 ... +175 °C T C=25°C IEC climatic category; DIN IEC 68-1 Rev. 1.1 55/175/56 page 1 2014-04-28 IPB120N03S4L-03 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - 1.9 Thermal resistance, junction ambient, leaded R thJA - - 62 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area3) - - 40 30 - - K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA Gate threshold voltage V GS(th) V DS=V GS, I D=40µA 1.0 1.6 2.2 Zero gate voltage drain current I DSS V DS=30V, V GS=0V, T j=25°C - - 1 - - 100 V DS=30V, V GS=0V, T j=125 °C2) V µA Gate-source leakage current I GSS V GS=16V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=4.5V, I D=60A - 3.7 5.1 mW Drain-source on-state resistance RDS(on) V GS=10V, I D=100A - 2.6 3 mΩ Rev. 1.1 page 2 2014-04-28 IPB120N03S4L-03 Parameter Symbol Values Conditions Unit min. typ. max. - 4100 5300 - 900 1200 Dynamic characteristics2) D-85579 Neubiberg Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 45 90 Turn-on delay time t d(on) - 7 - Rise time tr - 24 - Turn-off delay time t d(off) - 21 - Fall time tf - 34 - Gate to source charge Q gs - 13 17 Gate to drain charge Q gd - 8 16 Gate charge total Qg - 55 72 Gate plateau voltage V plateau - 3.3 - V - - 120 A - - 480 V GS=0V, V DS=25V, f =1MHz V DD=15V, V GS=10V, I D=120A, R G=3.5W pF ns Gate Charge Characteristics2) V DD=24V, I D=120A, V GS=0 to 10V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0V, I F=100A, T j=25°C - 0.9 1.3 V Reverse recovery time2) t rr V R=15V, I F=I S, di F/dt =100A/µs - 85 - ns Reverse recovery charge2) Q rr - 150 - nC T C=25°C 1) Current is limited by bondwire; with an R thJC = 1.9K/W the chip is able to carry 124A at 25°C. 2) Defined by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.1 page 3 2014-04-28 IPB120N03S4L-03 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 140 90 80 120 70 100 P tot [W] 60 80 I D [A] 50 40 60 30 40 20 20 10 0 0 0 50 100 150 0 200 50 100 150 200 T C [°C] T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 101 1000 limited by on-state resistance 10 µs 1 µs 100 µs 100 100 I D [A] Z thJC [K/W] 1 ms 0.1 10-1 10 0.5 0.05 0.01 single pulse 10-2 1 0.1 1 10 100 t p [s] V DS [V] Rev. 1.1 page 4 2014-04-28 IPB120N03S4L-03 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = (I D); T j = 25 °C parameter: V GS parameter: V GS 4 480 10 V 5.5 V 440 5V 400 4.5 V 360 320 3.5 R DS(on) [mW] 4.5 V I D [A] 280 240 200 4V 5V 5.5 V 6V 3 160 8V 120 3.5 V 80 40 10 V 3V 2.5 0 0 2 4 6 0 8 20 40 60 80 100 V DS [V] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 100 A; V GS = 10 V parameter: T j I D = 60 A; V GS = 4.5 V 480 6 440 4.5 V -55 °C 175 °C 400 5 25 °C 360 10 V R DS(on) [mW] 320 280 I D [A] 120 I D [A] 240 200 4 3 160 120 2 80 40 1 0 1 2 3 4 5 6 -20 20 60 100 140 180 T j [°C] V GS [V] Rev. 1.1 -60 page 5 2014-04-28 IPB120N03S4L-03 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 103 2 1.75 Ciss Coss 400µA 1.5 102 40µA C [pF] V GS(th) [V] 1.25 1 Crss 0.75 101 0.5 0.25 10 0 -60 -20 20 60 100 140 0 180 5 10 T j [°C] 15 20 12 Typ. avalanche characteristics IF = f(VSD) I AS = f(t AV) parameter: T j parameter: Tj(start) 1000 102 100 I F [A] I AV [A] 103 25 °C 101 25°C 150°C 100°C 10 100 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD [V] Rev. 1.1 30 V DS [V] 11 Typical forward diode characteristicis 175 °C 25 1 10 100 1000 t AV [µs] page 6 2014-04-28 IPB120N03S4L-03 13 Typical avalanche energy 14 Typ. drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 35 200 34 33 150 30 A E AS [mJ] V BR(DSS) [V] 32 100 31 30 60 A 29 50 120 A 28 27 0 25 75 125 -60 175 -20 20 T j [°C] 60 100 140 180 T j [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 80 A pulsed parameter: V DD 10 V GS 9 Qg 8 24 V 8V 7 V GS [V] 6 5 4 3 2 Q gate 1 Q gs Q gd 0 0 10 20 30 40 50 Q gate [nC] Rev. 1.1 page 7 2014-04-28 IPB120N03S4L-03 Published by Infineon Technologies AG Am Campeon 1-12 D-85579 Neubiberg © Infineon Technologies AG 2014 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies Office (www.infineon.com) Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies Office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 8 2014-04-28 IPB120N03S4L-03 Revision History Version Date Changes Revision 1.0 21.10.2013 Final Datasheet Revision 1.1 Changed Capacitances 28.04.2014 and Gate Charge Rev. 1.1 page 9 2014-04-28