IPB60R199CPATMA1

IPB60R199CP CoolMOS® Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS(on),max • Ultra low gate charge V Q g,typ 32 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications PG-TO263 • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching topologies, for Server and Telecom Type Package Ordering Code Marking IPB60R199CP PG-TO263 SP000223256 6R199P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 16 T C=100 °C 10 Pulsed drain current2) I D,pulse T C=25 °C 51 Avalanche energy, single pulse E AS I D=6.6 A, V DD=50 V 436 Avalanche energy, repetitive t AR2),3) E AR I D=6.6 A, V DD=50 V 0.66 Avalanche current, repetitive t AR2),3) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg Rev. 2.2 Unit A mJ 6.6 A V DS=0...480 V 50 V/ns static ±20 V AC (f >1 Hz) ±30 T C=25 °C 139 W -55 ... 150 °C page 1 2011-12-20 IPB60R199CP Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous diode forward current IS Diode pulse current 2) I S,pulse Reverse diode dv /dt 4) dv /dt Parameter Symbol Conditions Value Unit 9.9 T C=25 °C A 51 15 V/ns Values Unit min. typ. max. - - 0.9 SMD version, device on PCB, minimal footprint - - 62 SMD version, device on PCB, 6 cm2 cooling area5) - 35 - reflow MSL1 - - 260 °C 600 - - V Thermal characteristics Thermal resistance, junction - case R thJC R thJA Thermal resistance, junction ambient Soldering temperature, wave- & reflowsolderin allowed T sold K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA Gate threshold voltage V GS(th) V DS=V GS, I D=0.66 mA 2.5 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C - - 1 V DS=600 V, V GS=0 V, T j=150 °C - 10 - 3 3.5 µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=9.9 A, T j=25 °C - 0.18 0.199 Ω V GS=10 V, I D=9.9 A, T j=150 °C - 0.49 - f =1 MHz, open drain - 2 - Gate resistance Rev. 2.2 RG page 2 Ω 2011-12-20 IPB60R199CP Parameter Values Symbol Conditions Unit min. typ. max. - 1520 - - 72 - - 69 - - 180 - - 10 - - 5 - - 50 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Effective output capacitance, energy related6) C o(er) Effective output capacitance, time related7) C o(tr) Turn-on delay time t d(on) Rise time tr Turn-off delay time t d(off) Fall time tf - 5 - Gate to source charge Q gs - 8 - Gate to drain charge Q gd - 11 - Gate charge total Qg - 32 43 Gate plateau voltage V plateau - 5.0 - V - 0.9 1.2 V - 340 - ns - 5.5 - µC - 33 - A V GS=0 V, V DS=100 V, f =1 MHz V GS=0 V, V DS=0 V to 480 V V DD=400 V, V GS=10 V, I D=9.9 A, R G=3.3 Ω pF ns Gate Charge Characteristics V DD=400 V, I D=9.9 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm V GS=0 V, I F=9.9 A, T j=25 °C V R=400 V, I F=I S, di F/dt =100 A/µs 1) J-STD20 and JESD22 2) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 4) ISD≤ID, di/dt≤200A/µs, VDClink=400V, Vpeak