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IPD70R900P7SAUMA1

IPD70R900P7SAUMA1

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    SOT428

  • 描述:

    MOSFETN-CH700V12.8ADPAK

  • 数据手册
  • 价格&库存
IPD70R900P7SAUMA1 数据手册
IPD70R900P7S MOSFET 700VCoolMOSªP7PowerTransistor DPAK CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. ThelatestCoolMOS™P7isanoptimizedplatformtailoredtotargetcost sensitiveapplicationsinconsumermarketssuchascharger,adapter, lighting,TV,etc. ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction MOSFET,combinedwithanexcellentprice/performanceratioandstateof theartease-of-uselevel.Thetechnologymeetshighestefficiency standardsandsupportshighpowerdensity,enablingcustomersgoing towardsveryslimdesigns. tab 1 2 3 Drain Pin 2, Tab Features •ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss •Excellentthermalbehavior •IntegratedESDprotectiondiode •Lowswitchinglosses(Eoss) •Productvalidationacc.JEDECStandard Gate Pin 1 Source Pin 3 Benefits •Costcompetitivetechnology •Lowertemperature •HighESDruggedness •Enablesefficiencygainsathigherswitchingfrequencies •Enableshighpowerdensitydesignsandsmallformfactors Potentialapplications RecommendedforFlybacktopologiesforexampleusedinChargers, Adapters,LightingApplications,etc. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25°C 700 V RDS(on),max 0.9 Ω Qg,typ 6.8 nC ID,pulse 12.8 A Eoss @ 400V 0.9 µJ V(GS)th,typ 3 V ESD class (HBM) 1C Type/OrderingCode Package IPD70R900P7S PG-TO 252-3 Final Data Sheet Marking 70S900P7 1 RelatedLinks see Appendix A Rev.2.2,2019-08-09 700VCoolMOSªP7PowerTransistor IPD70R900P7S TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.2,2019-08-09 700VCoolMOSªP7PowerTransistor IPD70R900P7S 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 6.0 3.5 A TC = 20°C TC = 100°C - 12.8 A TC=25°C - - 3.6 A measured with standard leakage inductance of transformer of 5µH dv/dt - - 100 V/ns VDS=0...400V Gate source voltage VGS -16 -30 - 16 30 V static; AC (f>1 Hz) Power dissipation Ptot - - 30.5 W TC=25°C Operating and storage temperature Tj,Tstg -40 - 150 °C - Continuous diode forward current IS - - 4.1 A TC=25°C IS,pulse - - 12.8 A TC = 25°C dv/dt - - 1 V/ns VDS=0...400V,ISD
IPD70R900P7SAUMA1 价格&库存

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IPD70R900P7SAUMA1
  •  国内价格 香港价格
  • 2500+2.184012500+0.27093
  • 5000+2.028955000+0.25169
  • 7500+2.001737500+0.24832

库存:6955

IPD70R900P7SAUMA1
  •  国内价格 香港价格
  • 1+7.254031+0.89986
  • 10+4.8690110+0.60400
  • 100+3.34882100+0.41542
  • 500+2.65941500+0.32990
  • 1000+2.432531000+0.30176

库存:6955