IPD80R360P7
MOSFET
800VCoolMOSªP7PowerDevice
DPAK
Thelatest800VCoolMOS™P7seriessetsanewbenchmarkin800V
superjunctiontechnologiesandcombinesbest-in-classperformancewith
stateoftheartease-of-use,resultingfromInfineon’sover18years
pioneeringsuperjunctiontechnologyinnovation.
tab
Features
•Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss
•Best-in-classDPAKRDS(on)
•Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V
•IntegratedZenerDiodeESDprotection
•Fullyoptimizedportfolio
1
2
3
Drain
Pin 2, Tab
Benefits
•Best-in-classperformance
•Enablinghigherpowerdensitydesigns,BOMsavingsandlower
assemblycosts
•Easytodriveandtoparallel
•BetterproductionyieldbyreducingESDrelatedfailures
•Lessproductionissuesandreducedfieldreturns
•Easytoselectrightpartsforfinetuningofdesigns
*1
Gate
Pin 1
*2
*1: Internal body diode
*2: Integrated ESD diode
Source
Pin 3
Potentialapplications
RecommendedforhardandsoftswitchingflybacktopologiesforLED
Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand
Industrialpower.AlsosuitableforPFCstageinConsumerapplications
andSolar.
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj=25°C
800
V
RDS(on),max
0.36
Ω
Qg,typ
30
nC
ID
13
A
Eoss @ 500V
3.2
µJ
VGS(th),typ
3
V
ESD class (HBM)
2
-
Type/OrderingCode
Package
IPD80R360P7
PG-TO252-3
Final Data Sheet
Marking
80R360P7
1
RelatedLinks
see Appendix A
Rev.2.2,2020-05-26
800VCoolMOSªP7PowerDevice
IPD80R360P7
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.2.2,2020-05-26
800VCoolMOSªP7PowerDevice
IPD80R360P7
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
13
8.6
A
TC=25°C
TC=100°C
-
34
A
TC=25°C
-
-
34
mJ
ID=2.0A; VDD=50V
EAR
-
-
0.28
mJ
ID=2.0A; VDD=50V
Avalanche current, repetitive
IAR
-
-
2.0
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
100
V/ns
VDS=0to400V
Gate source voltage
VGS
-20
-30
-
20
30
V
static;
AC (f>1 Hz)
Power dissipation
Ptot
-
-
84
W
TC=25°C
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
-
Continuous diode forward current
IS
-
-
10
A
TC=25°C
IS,pulse
-
-
34
A
TC=25°C
dv/dt
-
-
1
V/ns
VDS=0to400V,ISD