IPI50R399CPXKSA2

IPI50R399CP CoolMOSTM Power Transistor Product Summary Features V )DL: HI;>I/ , + M . X V 2 AIG6 ADL C< 6C9 HIDG6C< IDGFJ: / : K   Unit 9 ^C ,', 9 V =L  3 .) O(_d deReZT v+) O  v,) ;  % O T ;>: 9 Parameter DCI>CJDJH9>D9: ;DGL6G9 8 JGG: CI Value Symbol Conditions IL Unit -'2 9 T D9: EJAH: 8 JGG: CI+# I L%af]dV +) / : K: GH: 9>D9: 9v (Ut -# Uv (Ut *. O(_d Parameter Symbol Conditions Values Unit min. typ. max. & & *'. ]VRUVU & & /+   B B     >C ;GDB 8 6H: ;DG H & & +/) u< .)) & & O Thermal characteristics 1=: GB 6AG: H>HI6C8 : ?JC8 I>DC 8 6H: R eYC< 1=: GB 6AG: H>HI6C8 : ?JC8 I>DC R^SZV_e R eYC9 0 DA9: G>C< I: B E: G6IJG: T d`]U L6K: HDA9: G>C< DCAN 6A ADL: 9 6IA : 69H D(P Electrical characteristics, 6IT [   Y JCA : HHDI=: GL>H: HE: 8 >;>: 9 Static characteristics !G6>C HDJG8 : 7G: 6@9DLC KDA I69I=t a A>B >I: 9 7NT [%^Ri ,# / : E: I>I>K: 6K6A6C8 =: 8 6JH: H699>I>DC6AEDL: GADHH: HI=6I8 6C 7: 8 6A8 JA6I: 9 6HP 9O6E 9K$f. -# I L="I = 9i (Ut "  [ H V =H6 ;>M: 9 8 6E68 >I6C8 : I=6IK: HI=: H6B : HIDG: 9 : C: GA : V =L >HG>H>C< ;GDB ID   V =LL' /# C `"ec# >H6 ;>M: 9 8 6E68 >I6C8 : I=6IK: HI=: H6B : 8 =6GC< I>B : 6HC `dd L=>A: V =L >HG>H>C< ;GDB ID   V =LL' / : K   E6I: 9 7N DC HI6I: cVdZdeR_TV 80  [H  [H 101  [H I D [A] P tot [W] 60  B H  B H 40 =< 100 20 10-1 0 0 25 50 75 100 125 100 150 101 102 103 V DS [V] T C [°C] 3 Max. transient thermal impedance 4 Typ. output characteristics Q"eYCC