IPB80N07S4-05
IPI80N07S4-05, IPP80N07S4-05
OptiMOS™-T2 Power-Transistor
Product Summary
VDS
75
V
RDS(on),max (SMD version)
5.2
mW
ID
80
A
Features
• N-channel - Enhancement mode
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPB80N07S4-05
PG-TO263-3-2
4N0705
IPI80N07S4-05
PG-TO262-3-1
4N0705
IPP80N07S4-05
PG-TO220-3-1
4N0705
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
Conditions
Value
T C=25°C, V GS=10V
80
T C=100°C, V GS=10V2)
80
Unit
A
Pulsed drain current2)
I D,pulse
T C=25°C
320
Avalanche energy, single pulse2)
E AS
I D=40A
240
mJ
Avalanche current, single pulse
I AS
-
65
A
Gate source voltage
V GS
-
±20
V
Power dissipation
P tot
T C=25°C
150
W
Operating and storage temperature
T j, T stg
-
-55 ... +175
°C
Rev. 1.0
page 1
2014-07-14
IPB80N07S4-05
IPI80N07S4-05, IPP80N07S4-05
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
Thermal resistance, junction - case
R thJC
-
-
-
1.0
Thermal resistance, junction ambient, leaded
R thJA
-
-
-
62
SMD version, device on PCB
R thJA
minimal footprint
-
-
62
6 cm2 cooling area3)
-
-
40
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0V, I D= 1mA
75
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=90µA
2.0
3.0
4.0
Zero gate voltage drain current
I DSS
V DS=75V, V GS=0V
-
0.01
1
T j=125°C2)
-
10
200
V DS=75V, V GS=0V,
V
µA
Gate-source leakage current
I GSS
V GS=20V, V DS=0V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10V, I D=80A
-
4.8
5.5
mW
V GS=10V, I D=80A,
SMD version
-
4.5
5.2
Rev. 1.0
page 2
2014-07-14
IPB80N07S4-05
IPI80N07S4-05, IPP80N07S4-05
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
3600
4800
-
1080
1440
Dynamic characteristics2)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
75
150
Turn-on delay time
t d(on)
-
13
-
Rise time
tr
-
8
-
Turn-off delay time
t d(off)
-
20
-
Fall time
tf
-
25
-
Gate to source charge
Q gs
-
19
25
Gate to drain charge
Q gd
-
12
24
Gate charge total
Qg
-
52
69
Gate plateau voltage
V plateau
-
5.5
-
V
-
-
80
A
-
-
320
V GS=0V, V DS=25V,
f =1MHz
V DD=37.5V, V GS=10V,
I D=80A, R G=3.5W
pF
ns
Gate Charge Characteristics2)
V DD=60V, I D=80A,
V GS=0 to 10V
nC
Reverse Diode
Diode continous forward current2)
IS
Diode pulse current2)
I S,pulse
Diode forward voltage
V SD
V GS=0V, I F=80A,
T j=25°C
-
0.9
1.3
V
Reverse recovery time2)
t rr
V R=37.5V, I F=50A,
di F/dt =100A/µs
-
90
-
ns
Reverse recovery charge2)
Q rr
-
60
-
nC
T C=25°C
1)
Current is limited by bondwire; with an R thJC = 1.0K/W the chip is able to carry 122A at 25°C.
2)
Defined by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2014-07-14
IPB80N07S4-05
IPI80N07S4-05, IPP80N07S4-05
1 Power dissipation
2 Drain current
P tot = f(T C); V GS = 10 V
I D = f(T C); V GS = 10 V; SMD
175
100
150
80
60
100
ID [A]
Ptot [W]
125
75
40
50
20
25
0
0
0
50
100
150
200
0
50
100
TC [°C]
150
200
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0; SMD
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
1000
101
1 µs
100
10 µs
0.5
100
ID [A]
ZthJC [K/W]
100 µs
1 ms
0.1
10-1
0.05
10
0.01
10-2
1
10-3
0.1
1
10
100
VDS [V]
Rev. 1.0
single pulse
10-6
10-5
10-4
10-3
10-2
10-1
100
tp [s]
page 4
2014-07-14
IPB80N07S4-05
IPI80N07S4-05, IPP80N07S4-05
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C; SMD
R DS(on) = f(I D); T j = 25 °C; SMD
parameter: V GS
parameter: V GS
320
13
5V
10 V
5.5 V
6V
7V
6.5 V
11
7V
240
RDS(on) [mW]
ID [A]
6.5 V
160
6V
80
9
7
5.5 V
5
10 V
5V
0
0
1
2
3
4
3
5
0
80
160
VDS [V]
240
320
ID [A]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = 6V
R DS(on) = f(T j); I D = 80 A; V GS = 10 V; SMD
parameter: T j
320
10
-55 °C
240
8
ID [A]
175 °C
160
RDS(on) [mW]
25 °C
80
4
0
3
4
5
6
7
VGS [V]
Rev. 1.0
6
2
-60
-20
20
60
100
140
180
Tj [°C]
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2014-07-14
IPB80N07S4-05
IPI80N07S4-05, IPP80N07S4-05
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS
C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D
105
4
3.5
C [pF]
104
900 µA
VGS(th) [V]
3
Ciss
103
90 µA
Coss
2.5
102
Crss
2
101
1.5
-60
-20
20
60
100
140
0
180
15
30
45
60
VDS [V]
Tj [°C]
11 Typical forward diode characteristicis
12 Avalanche characteristics
IF = f(VSD)
I A S= f(t AV)
parameter: T j
parameter: Tj(start)
1000
102
100
IF [A]
IAV [A]
103
25 °C
100 °C
150 °C
175 °C
25 °C
101
10
100
0
0.4
0.8
1.2
1.6
2
VSD [V]
Rev. 1.0
75
1
1
10
100
1000
tAV [µs]
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2014-07-14
IPB80N07S4-05
IPI80N07S4-05, IPP80N07S4-05
13 Avalanche energy
14 Drain-source breakdown voltage
E AS = f(T j)
V BR(DSS) = f(T j); I D = 1 mA
parameter: I D
1000
84
900
82
800
80
700
78
VBR(DSS) [V]
EAS [mJ]
600
500
17 A
400
76
74
72
300
33 A
70
200
65 A
68
100
66
0
25
75
125
-55
175
-15
Tj [°C]
25
65
105
145
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 80 A pulsed
parameter: V DD
10
V GS
9
15 V
Qg
60 V
8
7
VGS [V]
6
5
V g s(th)
4
3
2
Q g (th)
Q sw
Q gate
1
Q gs
0
0
20
40
Q gd
60
Qgate [nC]
Rev. 1.0
page 7
2014-07-14
IPB80N07S4-05
IPI80N07S4-05, IPP80N07S4-05
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2014
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2014-07-14
IPB80N07S4-05
IPI80N07S4-05, IPP80N07S4-05
Revision History
Version
Date
Changes
Revision 1.0
Rev. 1.0
09.07.2014 Final Data Sheet
page 9
2014-07-14