IPI90R1K2C3XKSA2

IPI90R1K2C3 CoolMOS™ Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS(on),max @T J=25°C 1.2 Ω Q g,typ 28 nC • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant PG-TO262 • Ultra low gate charge CoolMOS™ 900V is designed for: • Quasi Resonant Flyback / Forward topologies • PC Silverbox and consumer applications • Industrial SMPS Type Package Marking IPI90R1K2C3 PG-TO262 9R1K2C Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value Unit T C=25 °C 5.1 T C=100 °C 3.2 I D,pulse T C=25 °C 10 Avalanche energy, single pulse E AS I D=0.92 A, V DD=50 V 68 Avalanche energy, repetitive t AR 2),3) E AR I D=0.92 A, V DD=50 V 0.31 Avalanche current, repetitive t AR 2),3) I AR MOSFET dv /dt ruggedness dv /dt V DS=0...400 V 50 V/ns Gate source voltage V GS static ±20 V AC (f>1 Hz) ±30 T C=25 °C 83 W -55 ... 150 °C Pulsed drain current 2) Power dissipation P tot Operating and storage temperature T J, T stg Rev. 1.0 0.92 page 1 A mJ A 2008-07-29 IPI90R1K2C3 Maximum ratings, at T J =25 °C, unless otherwise specified Parameter Symbol Conditions Continuous diode forward current IS Diode pulse current Reverse diode dv/dt 2) 4) Parameter Value Unit 2.8 T C=25 °C A I S,pulse 11 dv/dt 4 V/ns Values Unit Symbol Conditions min. typ. max. - - 1.5 Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA leaded - - 62 Soldering temperature, wavesoldering only allowed at leads T sold 1.6 mm (0.063 in.) from case for 10 s - - 260 °C 900 - - V K/W Electrical characteristics, at T J=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA Gate threshold voltage V GS(th) V DS=V GS, I D=0.31 mA 2.5 3 3.5 Zero gate voltage drain current I DSS V DS=900 V, V GS=0 V, T j=25 °C - - 1 V DS=900 V, V GS=0 V, T j=150 °C - 10 - µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=2.8 A, T j=25 °C - 0.94 1.2 Ω V GS=10 V, I D=2.8 A, T j=150 °C - 2.5 - f =1 MHz, open drain - 1.3 - Gate resistance Rev. 1.0 RG page 2 Ω 2008-07-29 IPI90R1K2C3 Parameter Values Symbol Conditions Unit min. typ. max. - 710 - - 35 - - 23 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Effective output capacitance, energy related 5) C o(er) Effective output capacitance, time related 6) C o(tr) - 86 - Turn-on delay time t d(on) - 70 - Rise time tr - 20 - Turn-off delay time t d(off) - 400 - Fall time tf - 40 - Gate to source charge Q gs - 3.2 - Gate to drain charge Q gd - 12 - Gate charge total Qg - 28 tbd Gate plateau voltage V plateau - 4.5 - V - 0.8 1.2 V - 310 - ns - 3.7 - µC - 19 - A V GS=0 V, V DS=100 V, f =1 MHz pF V GS=0 V, V DS=0 V to 500 V V DD=400 V, V GS=10 V, I D=2.8 A, R G=81.3 Ω ns Gate Charge Characteristics V DD=400 V, I D=2.8 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm V GS=0 V, I F=2.8 A, T j=25 °C V R=400 V, I F=I S, di F/dt =100 A/µs 1) J-STD20 and JESD22 2) Pulse width t p limited by T J,max 3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 4) ISD≤ID, di/dt≤200A/µs, VDClink=400V, Vpeak