IRF200S234

IRF200S234 IR MOSFET - StrongIRFET™   Applications          Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters   Package Type IRF200S234 D2-PAK RDS(on), Drain-to -Source On Resistance (m ) ID 90A G S D2-Pak IRF200S234 G Gate D Drain Standard Pack Form Quantity Tape and Reel 800 S Source Orderable Part Number IRF200S234 100 I D = 51A 80 65 45 TJ = 125°C 25 5 6 8 10 12 14 16 40 20 TJ = 25°C 4 60 18 20 0 25 VGS, Gate -to -Source Voltage (V) Figure 1 16.9m D 85 2   14m max Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/dt Capability Pb-Free ; RoHS Compliant ; Halogen-Free Base part number RDS(on) typ. S I D, Drain Current (A)  200V G Benefits  VDSS D 50 75 100 125 150 175 TC , Case Temperature (°C)   Typical On-Resistance vs. Gate Voltage Final Datasheet www.infineon.com Figure 2 Maximum Drain Current vs. Case Temperature Please read the important Notice and Warnings at the end of this document V2.0 2017-6-30 IR MOSFET-StrongIRFET™ IRF200S234 Table of Contents Table of Contents Applications Benefits …..………………………………………………………………………...……………..……………1 …..………………………………………………………………………...……………..…………….1 Ordering Table ….……………………………………………………………………………………………………1 Table of Contents ….………………………………………………………………………………………………...2 1 Parameters ………………………………………………………………………………………………3 2 Maximum ratings, Thermal, and Avalanche characteristics ………………………………………4 3 Electrical characteristics ………………………………………………………………………………5 4 Electrical characteristic diagrams ……………………………………………………………………6 Package Information ………………………………………………………………………………………………14 Qualification Information ……………………………………………………………………………………………16 Revision History …………………………………………………………………………………………..…………17 Final Datasheet 2 V2.0 2017-06-30 IR MOSFET-StrongIRFET™ IRF200S234 Parameters 1 Parameters Table1 Key performance parameters Parameter Values Units VDS 200 V RDS(on) max  16.9 m ID 90 A Final Datasheet 3 V2.0 2017-06-30 IR MOSFET-StrongIRFET™ IRF200S234 Maximum ratings and thermal characteristics 2 Maximum ratings and thermal characteristics Table 2 Maximum ratings (at TJ=25°C, unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current Continuous Drain Current Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range ID ID IDM PD VGS TJ TSTG Soldering Temperature, for 10 seconds (1.6mm from case) Table 3 Thermal characteristics Parameter Symbol Junction-to-Case  RJC Case-to-Sink, Flat Greased Surface RCS Junction-to-Ambient  RJA Table 4 Values Unit TC = 25°C, VGS @ 10V TC = 100°C, VGS @ 10V TC = 25°C TC = 25°C TC = 25°C - 90 61 312 417 2.8 ± 20 - -55 to + 175 - 300 - Conditions TJ approximately 90°C (PCB Mount) (D2-Pak) Min. - Typ. 0.50 - A W W/°C V °C Max. 0.36 40 Unit °C/W Avalanche characteristics Parameter Symbol Values Single Pulse Avalanche Energy  EAS (Thermally limited) 574 Single Pulse Avalanche Energy  EAS (Thermally limited) 693 Avalanche Current  IAR Repetitive Avalanche Energy  EAR See Fig 16, 17, 23a, 23b Unit mJ   A mJ Notes: Repetitive rating; pulse width limited by max. junction temperature.  Limited by TJmax, starting TJ = 25°C, L = 0.436µH, RG = 50, IAS = 51A, VGS = 10V. ISD  51A, di/dt  1899A/µs, VDD V(BR)DSS, TJ  175°C. Pulse width  400µs; duty cycle  2%.  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.  R is measured at TJ approximately 90°C.  When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.:  Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 37A, VGS = 10V Final Datasheet 4 V2.0 2017-06-30 IR MOSFET-StrongIRFET™ IRF200S234 Electrical characteristics 3 Electrical characteristics Table 5 Static characteristics Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA Breakdown Voltage Temp. Coefficient V(BR)DSS/TJ Reference to 25°C, ID = 3.0mA  Static Drain-to-Source On-Resistance RDS(on) VGS = 10V, ID = 51A Values Unit Typ. Max. V 0.18 V/°C 14 16.9 m 3.0 5.0 V 20 µA 250 Min. 200 - Gate Threshold Voltage VGS(th) Drain-to-Source Leakage Current IDSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance IGSS IGSS RG VGS = 20V VGS = -20V Symbol Conditions gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss VDS = 50V, ID = 51A VDD = 100V ID = 51A RG = 2.7 VGS = 10V   VGS = 0V VDS = 50V ƒ = 1.0MHz, See Fig.7 Min. 96 - Coss eff.(ER) VGS = 0V, VDS = 0V to 160V  - 356 - Coss eff.(TR) VGS = 0V, VDS = 0V to 160V  - 491 - Table 6 Forward Trans conductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg– Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Output Capacitance (Time Related) 2.4 100 -100 - nA  nA   ID = 51A VDS = 100V VGS = 10V Values Typ. Max. 108 162 26 37 71 21 58 67 37 6484 462 142 - Unit S nC ns pF Reverse Diode Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Peak Diode Recovery dv/dt  Symbol IS Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 51A,VGS = 0V  TJ = 175°C, IS = 51A,VDS = 200V TJ = 25°C VDD = 170V TJ = 125°C  IF = 51A, TJ = 25°C di/dt = 100A/µs  TJ = 125°C  TJ = 25°C D Min. Values Typ. Max. - - 90 - - 312 - 26 117 140 563 801 8.7 1.3 - G ISM VSD dv/dt Reverse Recovery Time trr Reverse Recovery Charge Qrr Reverse Recovery Current IRRM Final Datasheet - Dynamic characteristics Parameter Table 7 VDS = VGS, ID = 250µA VDS = 200V, VGS =0V VDS = 200V,VGS = 0V,TJ =125°C S 5 Unit A V V/ns ns nC A V2.0 2017-06-30 IR MOSFET-StrongIRFET™ IRF200S234 Electrical characteristic diagrams 4 Electrical characteristic diagrams   1000 1000 TOP ID, Drain-to-Source Current (A) 60µs PULSE WIDTH VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.8V 100 BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.8V TOP Tj = 25°C I D, Drain-to-Source Current (A)   10 1 100 BOTTOM 4.8V 10 60µs PULSE WIDTH 4.8V Tj = 175°C 1 0.1 0.1 1 10 0.1 100 1   Figure 4 Typical Output Characteristics               3.5 60µs PULSE WIDTH 100 TJ = 175°C 10 TJ = 25°C 1.0 0.10 2 3 4 5 6 7 VGS = 10V 2.5 2.0 1.5 1.0 0.5 0.0 8 -60 -20 20 60 100 140 180 TJ , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) Typical Transfer Characteristics Final Datasheet I D = 51A 3.0 (Normalized) RDS(on) , Drain-to-Source On Resistance VDS = 50V I D, Drain-to-Source Current (A) Typical Output Characteristics   1000 Figure 5 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Figure 3 10 Figure 6 6 Normalized On-Resistance vs. Temperature V2.0 2017-06-30 IR MOSFET-StrongIRFET™ IRF200S234 Electrical characteristic diagrams 1E+006 VGS Ciss Crss Coss C, Capacitance (pF) 100000 14 = 0V, f = 1 MHZ = C gs + C gd, C ds SHORTED = C gd = C ds + C gd 10000 Ciss 1000 I D= 51A 12 VGS, Gate-to-Source Voltage (V)   Coss Crss 100 VDS= 160V 10 VDS= 100V VDS= 40V 8 6 4 2 10 0 1 10 100 1000 0 20 VDS, Drain-to-Source Voltage (V) Figure 7 40 60 80 100 120 140 QG, Total Gate Charge (nC) Typical Capacitance vs. Drain-to-Source Voltage Figure 8 Typical Gate Charge vs. Gate-to-Source Voltage I SD, Reverse Drain Current (A) 1000 100 TJ = 175°C 10 TJ = 25°C 1 VGS = 0V 0.1 0.0 0.4 0.8 1.2 VSD, Source-to-Drain Voltage (V)     Figure 9 Final Datasheet Typical Source-Drain Diode Forward Voltage 7 V2.0 2017-06-30 IR MOSFET-StrongIRFET™ IRF200S234 Electrical characteristic diagrams I D, Drain-to-Source Current (A) 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100µsec 10 1msec 1 10msec 0.1 Tc = 25°C Tj = 175°C Single Pulse DC 0.01 0.1 1 10 100 VDS, Drain-to-Source Voltage (V)     Figure 10   250 7 Id = 3.0mA 6 240 5 230 Energy (µJ) V(BR)DSS, Drain-to-Source Breakdown Voltage (V)   Maximum Safe Operating Area 220 210 4 3 2 200 1 190 0 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ , Temperature ( °C ) Figure 11 Final Datasheet 50 100 150 200 VDS, Drain-to-Source Voltage (V) Drain-to-Source Breakdown Voltage Figure 12 8 Typical Coss Stored Energy V2.0 2017-06-30 IR MOSFET-StrongIRFET™ IRF200S234 Electrical characteristic diagrams   50 5.5 VGS = 6.0V VGS = 7.0V VGS = 8.0V VGS = 10V 45 40 5.0 VGS(th), Gate threshold Voltage (V) RDS(on), Drain-to -Source On Resistance (m )   35 30 25 20 15 4.5 4.0 3.5 3.0 2.5 2.0 I D = 250µA ID = 1.0mA I D = 1.0A 1.5 10 1.0 0 25 50 75 100 125 150 175 200 -75 -50 -25   25 50 75 100 125 150 175 TJ , Temperature ( °C ) I D, Drain Current (A) Figure 13 0 Typical On-Resistance vs. Drain Current Figure 14 Threshold Voltage vs. Temperature Thermal Response ( Z thJC ) °C/W 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t 1 , Rectangular Pulse Duration (sec) Figure 15 Final Datasheet Maximum Effective Transient Thermal Impedance, Junction-to-Case 9 V2.0 2017-06-30 IR MOSFET-StrongIRFET™ IRF200S234 Electrical characteristic diagrams   100 Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart =25°C (Single Pulse) 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Figure 16 Avalanche Current vs. Pulse Width Notes on Repetitive Avalanche Curves , Figures 16, 17: (For further info, see AN-1005 at www.infineon.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. DT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav   600 TOP Single Pulse BOTTOM 1.0% Duty Cycle I D = 51A EAR , Avalanche Energy (mJ) 500 400 300 200 100 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Figure 17 Final Datasheet Maximum Avalanche Energy vs. Temperature 10 2017-06-30 IR MOSFET-StrongIRFET™ IRF200S234 Electrical characteristic diagrams     70 60 50 VR = 170V 60 40 TJ = 25°C TJ = 125°C 50 I RRM (A) I RRM (A) I F = 34A 30 20 VR = 170V TJ = 25°C TJ = 125°C 40 30 20 10 10 0 0 100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000 diF /dt (A/µs) diF /dt (A/µs) Figure 18   I F = 51A Typical Recovery Current vs. dif/dt Figure 19 Typical Recovery Current vs. dif/dt   2500 3000 I F = 34A VR = 170V 2000 TJ = 25°C TJ = 125°C 1500 QRR (nC) QRR (nC) I F = 51A 1000 2500 VR = 170V 2000 TJ = 25°C TJ = 125°C 1500 1000 500 500 0 0 100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000 diF /dt (A/µs) diF /dt (A/µs) Figure 20 Final Datasheet Typical Stored Charge vs. dif/dt Figure 21 11 Typical Stored Charge vs. dif/dt 2017-06-30 IR MOSFET-StrongIRFET™ IRF200S234 Electrical characteristic diagrams   Figure 22 Peak Diode Recovery dv/dt Test Circuit for N-Channel Power MOSFETs   Figure 23a Final Datasheet Unclamped Inductive Test Circuit Figure 23b 12 Unclamped Inductive Waveforms 2017-06-30 IR MOSFET-StrongIRFET™ IRF200S234 Electrical characteristic diagrams   Figure 24a Switching Time Test Circuit Figure 24b Switching Time Waveforms Gate Charge Test Circuit Figure 25b Gate Charge Waveform   Figure 25a Final Datasheet 13 2017-06-30 IR MOSFET-StrongIRFET™ IRF200S234 Package Information 5 Package Information D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D2Pak (TO-263AB) Part Marking Information Note: For the most current drawing please refer to website at http://www.irf.com/package/ Final Datasheet 14 2017-06-30 IR MOSFET-StrongIRFET™ IRF200S234 D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 11.60 (.457) 11.40 (.449) 1.65 (.065) 0.368 (.0145) 0.342 (.0135) 24.30 (.957) 23.90 (.941) 15.42 (.609) 15.22 (.601) TRL 1.75 (.069) 1.25 (.049) 10.90 (.429) 10.70 (.421) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to website at http://www.irf.com/package/ Final Datasheet 15 2017-06-30 IR MOSFET-StrongIRFET™ IRF200S234 Qualification Information 6 Qualification Information Qualification Information Industrial (per JEDEC JESD47F) † Qualification Level Moisture Sensitivity Level D2Pak Yes RoHS Compliant † MSL1 (per JEDEC J-STD-020D†) Applicable version of JEDEC standard at the time of product release. Final Datasheet 16 2017-06-30 IR MOSFET-StrongIRFET™ IRF200S234 Revision History Revision History Major changes since the last revision Page or Reference Revision Date Description of changes All pages 1.0 2016-09-23  First release Provisional data sheet. All pages 2.0 2017-06-30  First release Final data sheet. Final Datasheet 17 2017-06-30 Trademarks of Infineon Technologies AG µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ Trademarks updated November 2015 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. IMPORTANT NOTICE Edition 2015-05-06 Published by Infineon Technologies AG 81726 Munich, Germany    © 2016 Infineon Technologies AG. All Rights Reserved.    Do you have a question about this document? Email: erratum@infineon.com Document reference The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with