IRF3805L-7PPBF

IRF3805S-7PPbF IRF3805L-7PPbF Features HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free l l l l l l D VDSS = 55V RDS(on) = 2.6mΩ‰ G ID = 160A S Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. S (Pin 2, 3, 5, 6, 7) G (Pin 1) D2Pak 7 Pin IRF3805S-7PPbF TO-263CA 7 Pin IRF3805L-7PPbF Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 240 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig. 9) 170 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 160 IDM Pulsed Drain Current 1000 PD @TC = 25°C Maximum Power Dissipation 300 W Linear Derating Factor 2.0 ± 20 W/°C V 440 mJ c VGS EAS Gate-to-Source Voltage EAS (tested) Single Pulse Avalanche Energy Tested Value Single Pulse Avalanche Energy (Thermally Limited) c IAR Avalanche Current EAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range h d g 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Thermal Resistance j Parameter RθCS Case-to-Sink, Flat, Greased Surface RθJA Junction-to-Ambient RθJA Junction-to-Ambient (PCB Mount, steady state) j A °C -55 to + 175 Mounting torque, 6-32 or M3 screw Junction-to-Case See Fig.12a,12b,15,16 mJ Soldering Temperature, for 10 seconds RθJC 680 ij Typ. Max. Units ––– 0.50 °C/W 0.50 ––– ––– 62 ––– 40 HEXFET® is a registered trademark of International Rectifier. 1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 25, 2013 IRF3805S/L-7PPbF Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆ΒVDSS/∆TJ RDS(on) SMD VGS(th) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage gfs IDSS Forward Transconductance Drain-to-Source Leakage Current IGSS Min. Typ. Max. Units ––– 0.05 ––– ––– Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance 55 ––– ––– 2.0 110 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 2.0 ––– ––– ––– ––– ––– ––– 130 53 49 23 130 80 52 4.5 2.6 4.0 ––– 20 250 200 -200 200 ––– ––– ––– ––– ––– ––– ––– LS Internal Source Inductance ––– 7.5 ––– Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance ––– ––– ––– ––– ––– ––– 7820 1260 610 4310 980 1540 ––– ––– ––– ––– ––– ––– Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 140A V VDS = VGS, ID = 250µA S VDS = 25V, ID = 140A µA VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V nC ID = 140A VDS = 44V VGS = 10V ns VDD = 28V ID = 140A RG = 2.4Ω VGS = 10V D nH Between lead, e e d 6mm (0.25in.) from package pF G S and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 44V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 44V Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 240 ISM (Body Diode) Pulsed Source Current ––– ––– 1000 VSD trr Qrr Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ––– ––– ––– ––– 45 35 1.3 68 53 (Body Diode)c A Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). ‚ Limited by TJmax, starting TJ = 25°C, L=0.043mH, R G = 25Ω, IAS = 140A, VGS =10V. Part not recommended for use above this value. ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%. „ Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Conditions MOSFET symbol V ns nC showing the integral reverse D G S p-n junction diode. TJ = 25°C, IS = 140A, VGS = 0V TJ = 25°C, IF = 140A, VDD = 28V di/dt = 100A/µs e e … Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. † This value determined from sample failure population. 100% tested to this value in production. ‡ This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. ˆ Rθ is measured at TJ of approximately 90°C. ‰ Solder mounted on IMS substrate. 2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 25, 2013 IRF3805S/L-7PPbF 10000 10000 1000 BOTTOM 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 1000 10 1 4.5V BOTTOM 100 4.5V 10 ≤60µs PULSE WIDTH ≤60µs PULSE WIDTH Tj = 175°C Tj = 25°C 0.1 0.1 1 10 1 100 1000 0.1 V DS, Drain-to-Source Voltage (V) 1 10 100 1000 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 250 Gfs, Forward Transconductance (S) ID, Drain-to-Source Current (Α) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V T J = 175°C 100 TJ = 25°C 10 VDS = 25V ≤60µs PULSE WIDTH 1.0 TJ = 25°C 200 150 T J = 175°C 100 50 V DS = 10V 380µs PULSE WIDTH 0 2 4 6 8 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 10 0 20 40 60 80 100 120 ID,Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance vs. Drain Current 3 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 25, 2013 IRF3805S/L-7PPbF 100000 12.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED ID= 140A VGS, Gate-to-Source Voltage (V) C rss = C gd C, Capacitance(pF) C oss = C ds + C gd 10000 Ciss Coss Crss 1000 100 VDS= 64V VDS= 40V 10.0 8.0 6.0 4.0 2.0 0.0 1 10 100 0 VDS, Drain-to-Source Voltage (V) 50 100 150 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 10000 10000 1000 T J = 175°C 100 10 T J = 25°C 1 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 1msec 100µsec 100 10 10msec 1 Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage DC 0.1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 4 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 25, 2013 IRF3805S/L-7PPbF 2.5 Limited By Package 200 ID, Drain Current (A) RDS(on) , Drain-to-Source On Resistance (Normalized) 250 150 100 50 ID = 140A VGS = 10V 2.0 1.5 1.0 0.5 0 25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100120140160180 175 T J , Junction Temperature (°C) T C , Case Temperature (°C) Fig 10. Normalized On-Resistance vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 τJ 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) R1 R1 τJ τ1 τ1 R2 R2 τ2 τ2 Ci= τi/Ri Ci i/Ri R3 R3 τ3 τC τ τ3 Ri (°C/W) 0.0794 τi (sec) 0.000192 0.1474 0.2737 0.000628 0.014012 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 25, 2013 IRF3805S/L-7PPbF 15V VDS D.U.T RG VGS 20V + V - DD IAS A 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) 2000 DRIVER L ID TOP 21A 37A BOTTOM 140A 1500 1000 500 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) I AS Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGS QGD 5.0 Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50KΩ 12V .2µF .3µF D.U.T. + V - DS VGS(th) Gate threshold Voltage (V) VG 4.5 4.0 3.5 3.0 2.5 ID = 250µA ID = 1.0mA ID = 1.0A 2.0 1.5 -75 -50 -25 VGS 0 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage vs. Temperature 6 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 25, 2013 IRF3805S/L-7PPbF 1000 Avalanche Current (A) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆ Tj = 150°C and Tstart =25°C (Single Pulse) 100 0.01 0.05 0.10 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Τ j = 25°C and Tstart = 150°C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth EAR , Avalanche Energy (mJ) 500 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 140A 400 300 200 100 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy vs. Temperature 175 Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav 7 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 25, 2013 IRF3805S/L-7PPbF D.U.T Driver Gate Drive ƒ + ‚ - P.W. + „ D.U.T. ISD Waveform Reverse Recovery Current + V DD • dv/dt controlled by RG • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test P.W. Period *  RG D= VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - Period + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% * ISD VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V DS V GS RG RD D.U.T. + -V DD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms 8 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 25, 2013 IRF3805S/L-7PPbF D2Pak - 7 Pin Package Outline Dimensions are shown in millimeters (inches) Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 25, 2013 IRF3805S/L-7PPbF D2Pak - 7 Pin Part Marking Information 14 D2Pak - 7 Pin Tape and Reel Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 25, 2013 IRF3805S/L-7PPbF TO-263CA 7 Pin Long Leads Package Outline Dimensions are shown in millimeters (inches) Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ Revision History Date 10/25/2013 Comments •Remove the "Automotive MOSFET" on the header, on page 1. IR WORLD HEADQUARTERS: 101 N. 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