IRF7380QTRPBF

END OF LIFE IRF7380QPbF l l l l l l l HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free VDSS 80V Description Additional features of These HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. This surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. IRF7380QPbF S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Standard Pack Form Quantity IRF7380QTRPbF SO-8 Tape and Reel IRF7380QPbF SO-8 Tube ID 2.2A SO-8 Top View Package Type Base part number Orderable part number RDS(on) max 73m:@VGS = 10V EOL Notice Replacement Part Number 4000 EOL 529 95 EOL 529 Please search the EOL part number on IR’s website for guidance Absolute Maximum Ratings Parameter Max. Units 80 V VDS Drain-to-Source Voltage VGS ID @ TA = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ± 20 3.6 ID @ TA = 100°C Continuous Drain Current, VGS @ 10V 2.9 IDM Pulsed Drain Current 29 PD @TA = 25°C c Maximum Power Dissipation Linear Derating Factor h dv/dt TJ Peak Diode Recovery dv/dt Operating Junction and TSTG Storage Temperature Range A 2.0 W 0.02 W/°C 2.3 -55 to + 150 V/ns °C Thermal Resistance Parameter R θJL Junction-to-Drain Lead R θJA Junction-to-Ambient (PCB Mount) f Typ. Max. Units ––– 42 °C/W ––– 62.5 Notes  through † are on page 8 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 8, 2014 END OF LIFE IRF7380QPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 80 ––– ––– ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.09 ––– RDS(on) Static Drain-to-Source On-Resistance ––– 61 73 VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250μA IDSS Drain-to-Source Leakage Current ––– ––– 20 μA VDS = 80V, VGS = 0V ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -200 V VGS = 0V, ID = 250μA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 2.2A f VDS = 64V, VGS = 0V, TJ = 125°C VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units ––– ––– S Conditions gfs Qg Forward Transconductance 4.3 VDS = 25V, ID = 2.2A Total Gate Charge ––– 15 23 Qgs Gate-to-Source Charge ––– 2.9 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 4.5 ––– VGS = 10V td(on) Turn-On Delay Time ––– 9.0 ––– VDD = 40V tr Rise Time ––– 10 ––– td(off) Turn-Off Delay Time ––– 41 ––– tf Fall Time ––– 17 ––– VGS = 10V Ciss Input Capacitance ––– 660 ––– VGS = 0V Coss Output Capacitance ––– 110 ––– Crss Reverse Transfer Capacitance ––– 15 ––– Coss Output Capacitance ––– 710 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 72 ––– VGS = 0V, VDS = 64V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 140 ––– VGS = 0V, VDS = 0V to 64V ID = 2.2A nC VDS = 40V f ID = 2.2A ns RG = 24Ω f VDS = 25V pF ƒ = 1.0MHz g Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c dh Typ. Max. Units ––– 75 mJ ––– 2.2 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 3.6 A MOSFET symbol ISM (Body Diode) Pulsed Source Current ––– ––– 29 A showing the integral reverse VSD (Body Diode) Diode Forward Voltage ––– ––– 1.3 V p-n junction diode. TJ = 25°C, IS = 2.2A, VGS = 0V trr Reverse Recovery Time ––– 50 ––– ns Qrr Reverse Recovery Charge ––– 110 ––– nC ton Forward Turn-On Time ch 2 D G S f TJ = 25°C, IF = 2.2A, VDD = 40V di/dt = 100A/μs f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 8, 2014 END OF LIFE IRF7380QPbF 100 100 10 BOTTOM 1 3.7V 0.1 0.01 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 7.0V 5.0V 4.5V 4.3V 4.0V 3.7V 10 BOTTOM 3.7V 1 20μs PULSE WIDTH Tj = 150°C 20μs PULSE WIDTH Tj = 25°C 0.1 0.001 0.1 1 10 100 0.1 1000 1 Fig 1. Typical Output Characteristics RDS(on), Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (Α) 2.5 10 T J = 150°C T J = 25°C VDS = 15V 20μs PULSE WIDTH 0 3.0 4.0 5.0 6.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 100 1000 Fig 2. Typical Output Characteristics 100 1 10 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) 3 VGS 15V 10V 7.0V 5.0V 4.5V 4.3V 4.0V 3.7V 7.0 I D = 3.6A 2.0 1.5 1.0 0.5 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 TJ, Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 8, 2014 160 END OF LIFE IRF7380QPbF 100000 VGS , Gate-to-Source Voltage (V) 10000 Coss = Cds + Cgd 1000 Ciss C oss 100 Crss 10 ID= 2.1A VDS= 16V 8 6 4 2 0 1 10 100 0 2 VDS, Drain-to-Source Voltage (V) 4 6 8 10 12 14 16 Q G Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 ID, Drain-to-Source Current (A) 100 10 T J= 25 ° C TJ = 150 ° C 1 V GS = 0 V 0.1 0.0 0.5 1.0 1.5 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS= 64V VDS= 40V 10 1 ISD, Reverse Drain Current (A) C, Capacitance(pF) 12 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd OPERATION IN THIS AREA LIMITED BY R DS(on) 10 100μsec 1 1msec Tc = 25°C Tj = 150°C Single Pulse 0.1 2.0 1 10msec 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 8, 2014 END OF LIFE IRF7380QPbF 4.0 RD VDS VGS ID , Drain Current (A) 3.0 D.U.T. RG + -V DD 10V 2.0 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 1.0 VDS 90% 0.0 25 50 75 100 125 150 TA , Ambient Temperature (°C) 10% VGS Fig 9. Maximum Drain Current Vs. Ambient Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms (Z thJA ) 100 D = 0.50 0.20 10 Thermal Response 0.10 0.05 P DM 0.02 1 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = 2. Peak T 0.1 0.00001 0.0001 0.001 0.01 0.1 t1/ t 2 J = P DM x Z thJA 1 +T A 10 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 8, 2014 100 END OF LIFE RDS(on) , Drain-to -Source On Resistance (m Ω) IRF7380QPbF RDS (on) , Drain-to-Source On Resistance (mΩ) 95 90 85 80 VGS = 10V 75 70 65 60 55 50 0 5 10 15 20 25 30 800 700 600 500 400 300 ID = 3.6A 200 100 0 3.0 ID , Drain Current (A) 5.0 7.0 9.0 11.0 13.0 15.0 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. QG VGS QGS .3μF D.U.T. + V - DS QGD 200 VG EAS, Single Pulse Avalanche Energy (mJ) 50KΩ .2μF 12V VGS 3mA Charge IG ID Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 15V V(BR)DSS tp L VDS D.U.T RG IAS 20V I AS tp DRIVER + V - DD 0.01Ω Fig 15a&b. Unclamped Inductive Test circuit and Waveforms 6 A TOP 160 BOTTOM ID 1.0A 1.8A 2.2A 120 80 40 0 25 50 75 100 125 Starting TJ, Junction Temperature (°C) Fig 15c. Maximum Avalanche Energy Vs. Drain Current www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 8, 2014 150 END OF LIFE IRF7380QPbF SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) D DIM B 5 A 8 6 7 6 H E 1 2 3 0.25 [.010] 4 A MIN .0532 .0688 1.35 1.75 A1 .0040 e e1 8X b 0.25 [.010] A MAX 0.25 .0098 0.10 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC 1.27 BASIC .025 BAS IC 0.635 BAS IC e1 6X MILLIMETERS MAX A 5 INCHES MIN H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° K x 45° C A1 y 0.10 [.004] 8X c 8X L 7 C A B F OOTPRINT NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 8X 0.72 [.028] 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A SUBST RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Information EXAMPLE: THIS IS AN IRF7101 (MOS FET ) INTERNATIONAL RECT IFIER LOGO XXXX F 7101 DAT E CODE (YWW) P = DIS GNAT ES LEAD - FREE PRODUCT (OPTIONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY SIT E CODE LOT CODE PART NUMBER Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 8, 2014 END OF LIFE IRF7380QPbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. For the most current drawing please refer to IR website at http://www.irf.com/package/ Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 31mH RG = 25Ω, IAS = 2.2A. ƒ Pulse width ≤ 400μs; duty cycle ≤ 2%. 8 „ When mounted on 1 inch square copper board. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. † ISD ≤ 2.2A, di/dt ≤ 220A/μs, VDD ≤ V(BR)DSS,TJ ≤ 150°C. www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 8, 2014 END OF LIFE IRF7380QPbF † Qualification Information Industrial † Qualification level (per JEDEC JESD47F††guidelines) Moisture Sensitivity Level RoHS Compliant MSL1 SO-8 (per JEDEC J-STD-020D††) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release. † Revision History Date 9/16/2013 9/8/2014 Comments •Updated the Rthja from 50°C/W to 62.5°C/W, on page 1. •Converted the data sheet to IR Corproate Template. •Added ordering information and updated to reflect the End-Of-life (EOL notice #529) on page1. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 8, 2014